A.S. Stepanov

Emission properties of carbon nanowalls on porous silicon

For the past two decades various methods of carbon nanostructures growth have been proposed. Special substrate pretreatment methods are generally used to grow carbon nanowalls on silicon substrates and among them are mechanical and catalytic methods and ion bombardment in an rf discharge with bias. This work describes the possibility of growing carbon structures on porous silicon in a dc discharge without any additional pretreatment of the substrate surface. Carbon structures were grown on n- and p-type (100) porous silicon substrates produced by using standard photoelectrochemical etching. The analysis of these carbon structures revealed nanocrystalline carbon with multilayer carbon nanotubes and fibers. All samples demonstrated low field emission thresholds (Etr < 3 V/μm) and high current densities, showing an achieved current density of more than 6 A/cm2 for an electric field of E ∼ 15 V/μm. The authors investigated various modifications of porous silicon samples and carbon structures and demonstrated ...

Heteroepitaxy of Nickel and Copper on Diamond

Crystalline nickel and copper possess bcc lattices, the parameters of which are 1.2 and 1.35% smaller than that of diamond. Heteroepitaxial Ni and Cu films have been grown by magnetron sputtering on polished and then thermally annealed and etched {100} and {110} surfaces of natural diamond. The films exhibit island morphology and possess a highly perfect crystalline structure.