A. V. Belyakov

Erratum 2 : the different physical origins of 1/f noise and superimposed RTS noise in light-emitting quantum dot diodes

Low frequency noise characteristics of light-emitting diodes with InAs quantum dots in GaInAs layer are investigated. Two noise components were found in experimental noise records: RTS, caused by burst noise, and 1/f Gaussian noise. Extraction of burst noise component from Gaussian noise background was performed using standard signal detection theory and advanced signal-processing techniques. It was found that Hooges empirical relation applied to diodes by Kleinpenning is applicable to the electric 1/f noise in quantum dot diodes as well. Two different spectra decomposition techniques are used to obtain burst noise spectra. Bias dependences of burst and 1/f noise are compared. It is concluded that the RTS noise and 1/f noise have different physical origins in light-emitting diodes with quantum dots.

1/F Noise In Leakage Current Of Nanoscale Light Emitting Structures

The 1/f voltage noise in prototypes of light‐emitting diodes (LEDs) with InAs quantum dots (QDs), LEDs with InAs QDs and In0.2Ga0.8As quantum wells (QWs) and In0.2Ga0.8As/GaAs/InGaP lasers with QWs was investigated. Optical intensity noise in spontaneous emission regime in QW lasers has been investigated as well. The leakage current is the main source of voltage 1/f noise. Noise in electrical parameters of QWs and QDs was not detected.

Differences in dependence of 1/f and RTS noise on current in quantum-dot light-emitting diodes

Low frequency noise characteristics of light-emitting diodes with InAs quantum dots in GaInAs layer are investigated. Two noise components were found in experimental noise records: RTS, caused by burst noise, and 1/f Gaussian noise. Extraction of burst noise component from Gaussian noise background was performed using standard signal detection theory and advanced signal-processing techniques. It was found that Hooges empirical relation applied to diodes by Kleinpenning is applicable to the electric 1/f noise of quantum dot diodes as well. Two different spectra decomposition techniques are used to obtain burst noise spectra. Bias dependences of burst and 1/f noise are compared. It is concluded that the RTS noise and 1/f noise have different physical origins in light-emitting diodes with quantum dots.

1/f Optical Fluctuations In Quantum Well Laser Diodes

Electrical and optical intensity noise in quantum well lasers has been investigated. The voltage and optical noise spectra show at low frequencies a 1/f noise contribution and a plateau at high frequencies. The coherence function at low frequencies between optical intensity and voltage noise is close to 1. With the coherence function we split optical noise in two parts. One part is fully correlated to electrical noise and has 1/f shape. The other part has a flat spectrum, which is somewhat higher than the photo detector shot noise. The 1/f optical noise dependence on detector current is in agreement with formerly published experimental results and models.

Technique for Investigation of Non-Gaussian and Non-Stationary Properties of LF Noise in Nanoscale Semiconductor Devices

We investigated known methods of the LF (1/f) noise Gaussianity test. These are measurements of: (a) high order semi-invariants, (b) the histogram as the estimate of the probability density function, (c) the accuracy in the measurement of the noise intensity at the output of bandpass filter, (d) the correlation between intensities of the noise at outputs of non-overlapped filters, and (e) the complex bispectrum of the noise. These methods are sensitive to the non-stationarity of the noise as well. A special computeraided setup was designed for these measurements. Tests were performed for quantum well laser diodes manufactured in Nizhni Novgorod State University. We have found that the voltage noise in the diodes is non-Gaussian and seems to be non-stationary. Our results may be used for the check of radiation defects in semiconductor devices and for the investigation of the 1/f noise nature.