A. V. Larionov

Interwell Excitons in GaAs/AlGaAs Double Quantum Wells and Their Collective Properties

Luminescence spectra of interwell excitons in GaAs/AlGaAs double quantum wells with electric-field-tilted bands (n-i-n) structures were studied. In these structures the electron and the hole in the interwell exciton are spatially separated between neighboring quantum wells by a narrow AlAs barrier. Under resonant excitation by circularly polarized light the luminescence line of the interwell excitons exhibited appreciable narrowing as their concentration increased and the degree of circular polarization of the photoluminescence increased substantially. Under resonant excitation by linearly polarized light the alignment of the interwell excitons increased as a threshold process with increasing optical pumping. By analyzing time-resolved spectra and the kinetics of the photoluminescence intensity under pulsed excitation it was established that under these conditions the rate of radiative recombination increases substantially. The observed effect occurs at below-critical temperatures and is interpreted in terms of the collective behavior of the interwell excitons. Studies of the luminescence spectra in a magnetic field showed that the collective exciton phase is dielectric and in this phase the interwell excitons retain their individual properties.

Bose Condensation of Interwell Excitons in Double Quantum Wells

The luminescence of interwell excitons in double quantum wells GaAs/AlGaAs (n-i-n heterostructures) with large-scale fluctuations of random potential in the heteroboundary planes was studied. The properties of excitons whose photoexcited electron and hole are spatially separated in the neighboring quantum wells were studied as functions of density and temperature within the domains on the scale less than one micron. For this purpose, the surfaces of the samples were coated with a metallic mask containing specially prepared holes (windows) of a micron size an less for the photoexcitation and observation of luminescence. For weak pumping (less than 50 μW), the interwell excitons are strongly localized because of small-scale fluctuations of a random potential, and the corresponding photoluminescence line is inhomogeneously broadened (up to 2.5 meV). As the resonant excitation power increases, the line due to the delocalized excitons arises in a thresholdlike manner, after which its intensity linearly increases with increasing pump power, narrows (the smallest width is 350 μeV), and undergoes a shift (of about 0.5 μeV) to lower energies, in accordance with the filling of the lowest state in the domain. With a rise in temperature, this line disappears from the spectrum (Tc ≤ 3.4 K). The observed phenomenon is attributed to Bose-Einstein condensation in a quasi-two-dimensional system of interwell excitons. In the temperature range studied (1.5–3.4 K), the critical exciton density and temperature increase almost linearly with temperature.

Condensation of interwell excitons in GaAs/AlGaAs double quantum wells

Experimental observations of the collective behavior of interwell excitons in the binary quantum wells with inclined bands under bias are discussed.

Electric-field control of spin-orbit splittings in GaAs / Al x Ga 1 − x As coupled quantum wells

Electron spin dynamics is investigated in

Long-range coherence of interacting Bose gas of dipolar excitons

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Phase diagram of the Bose condensation of interwell excitons in GaAs/AlGaAs double quantum wells

GaAs/AlGaAs coupled quantum wells. The electron-spin dephasing time is measured as a function of an external electrical bias under resonant excitation of the 1sHH intrawell exciton using a time-resolved Kerr rotation technique. There is found a strong electron-spin dephasing time anisotropy caused by an interference of the structure inversion asymmetry and the bulk inversion asymmetry. This anisotropy is shown to be controlled by an electrical bias. A theoretical analysis of electron-spin dephasing time anisotropy is developed. The ratio of Rashba and Dresselhaus spin splittings is studied as a function of applied bias.

Collective state of interwell excitons in GaAs/AlGaAs double quantum wells under pulse resonance excitation

Experiments connected with dipolar exciton Bose condensation in lateral traps are reviewed. Observations of long-range coherence of condensate in ring electrostatic traps in Schottky-diode heterostructures with double and single quantum wells are presented and discussed.

Luminescence Kinetics of Dipolar Excitons in Circular Traps

The luminescence of interwell excitons in GaAs/AlGaAs double quantum wells (n-i-n heterostructures) with large-scale fluctuations of random potential in the heteroboundary planes was studied at low temperatures down to 0.5 K. The properties of excitons whose photoexcited electron and hole are spatially separated in the neighboring quantum wells by a tunneling barrier were studied as functions of density and temperature. The studies were performed within domains about one micron in size, which played the role of macroscopic traps for interwell excitons. For this purpose, the sample surface was coated with a metal mask containing special openings (windows) of a micron size or smaller. Both photoexcitation and observation of luminescence were performed through these windows by the fiber optic technique. At low pumping powers, the interwell excitons were strongly localized because of the residual charged impurities, and the corresponding photoluminescence line was nonuniformly broadened. As the laser excitation power increased, a narrow line due to delocalized excitons arose in a threshold-like manner, after which its intensity rapidly increased with growing pumping and the line itself narrowed (to a linewidth less than 1 meV) and shifted toward lower energies (by about 0.5 meV) in accordance with the filling of the lowest exciton state in the domain. An increase in temperature was accompanied by the disappearance of the line from the spectrum in a nonactivation manner. The phenomenon observed in the experiment was attributed to Bose-Einstein condensation in a quasi-two-dimensional system of interwell excitons. In the temperature interval studied (0.5–3.6) K, the critical exciton density and temperature were determined and a phase diagram outlining the exciton condensate region was constructed.

Collective Behavior of Interwell Excitons in GaAs/AlGaAs Double Quantum Wells

The time evolution and kinetics of photoluminescence (PL) spectra of interwell excitons in double GaAs/AlGaAs quantum wells (n-i-n structures) have been investigated under the pulse resonance excitation of intrawell 1sHH excitons using a pulsed tunable laser. It is found that the collective exciton phase arises with a time delay relative to the exciting pulse (several nanoseconds), which is due to density and temperature relaxation to the equilibrium values. The origination of the collective phase of interwell excitons is accompanied by a strong narrowing of the corresponding photoluminescence line (the line width is about 1.1 meV), a superlinear rise in its intensity, a long time in the change of the degree of circular polarization, a displacement of the PL spectrum toward lower energies (about 1.5 meV) in accordance with the filling of the lowest state with the exciton Bose condensate, and a significant increase in the radiative decay rate of the condensed phase. The collective exciton phase arises at temperatures T<6 K and interwell exciton densities n=3×1010 cm−2. Coherent properties of the collective phase of interwell excitons and experimental manifestations of this coherence are discussed.

Bose-einstein condensation of exciton polaritons in high-Q planar microcavities with GaAs quantum wells

The kinetics of the luminescence spectra of dipolar excitons accumulated in circular traps under pulsed off-resonance laser photoexcitation is investigated. The temperature of the exciton gas is determined.