A. V. Lunev

Polarized photosensitivity of the heterojunctions p-Ge-n-CdGeP2

The photoelectric properties are analyzed of heterojunctions obtained by heaping layers of germanium on oriented supports from CdGeP2. It is discovered that as a result of the appearance of absorption anisotropy in the heterojunctions under illumination from the side of the germanium, polarized photosensitivity arises, and in the spectra of the natural photopleochroism, maxima are observed in the region of energies below 1.72 eV at 300 K. The high polarized photosensitivity yields a basis for recommending the heterojunctions obtained for use as photoanalyzers of linearly polarized radiation.

Investigation of heterojunctions in the system SnO2-CdGeP2

Photosensitivity spectra of heterojunctions on the basis of SnO2 layers and n- and p-type conductivity CdGeP2 crystals are investigated in natural and linearly polarized radiation in the 160–360 K temperature range. Temperature coefficients of the change in interband energies of A- and B-junctions are determined. The temperature dependence of the photosensitivity of the obtained n-n and n-p-heterojunctions is studied.

Photoelectric parameters of the heterojunctions ITO-CdGeP2

Photosensitive n-n and n-p structures based on CdGeP2 crystals and layers of indium and tin oxides were prepared by the method of reactive cathodic sputtering. The photoelectric properties of the structures in natural and linearly polarized light were studied, and the temperature dependence of the photosensitivity in the interval 80–400 K was also measured. The polarization parameters of heterojunctions were determined, and the results were analyzed based on a model of the band spectrum and the selection rules for interband transitions in CdGeP2. It is shown that n-n heterojunctions can be employed as polarimetric photodetectors.

Photovoltaic effect in Cd2 SnO4-CdGeP2 heterojunctions

It is shown experimentally to be possible to form rectifying photosensitive heterojunctions by using the method of reactive cathodic sputtering to deposit layers of Cd2SnO4 on the surface of nand p-type CdGeP2 single crystals. It is demonstrated that photosensitivity is seen in the range between the widths of the forbidden bands of CdGeP2 and Cd2SnO4; photosensitivity is 3–4 orders of magnitude greater for n-n junctions than for n-p junctions. The parameters of polarizational photosensitivity were established and analyzed, providing evidence that the investigated system, with an n-n contact, can be used to make polarimetric photodetectors.

Electric and photoelectric properties of n-SnO2-n-CdGeP2〈In〉 heterojunction

This paper is devoted to the study of the electric and photoelectric properties of n-SnO/sub 2/-n-CdGeP/sub 2/ (In), obtained by deposition of SnO/sub 2/ layers on a CdGeP/sub 2/ substrate by the method of cathodic sputtering of an Sn target in the gas mixture 30% Ar + 70% O/sub 2/ under a pressure of 3.33-5.33 Pa for the purpose of improving the parameters of the indicated heterojunction. The method used to deposit the SnO/sub 2/ layers permits obtaining rectifying heterojunctions on n- and p-CdGeP/sub 2/ substrates.