A. V. Suslov

Magnetization-driven metal-insulator transition in strongly disordered Ge:Mn magnetic semiconductors

We report on the temperature- and field-driven metal-insulator transition in disordered Ge:Mn magnetic semiconductors accompanied by magnetic ordering, magnetoresistance reaching thousands of percents, and suppression of the extraordinary Hall effect by a magnetic field. Magnetoresistance isotherms are shown to obey a universal scaling law with a single scaling parameter depending on temperature and fabrication. We argue that the strong magnetic disorder leads to localization of charge carriers and is the origin of the unusual properties of Ge:Mn alloys.

EFFICIENT HIGH-HOMOGENEOUS WIDE-APERTURE EXCIMER DISCHARGE USING A STABILIZING LOW-CURRENT PREDISCHARGE

A technique of initiation of a self‐sustained electrical discharge for pumping excimer lasers, based on the use of a stabilizing predischarge with an electron density Ne∼1012–1013 cm−3, has been developed. It has been demonstrated that such an auxiliary discharge is stable for random disturbances of the plasma parameters. An efficient, stable, and highly homogeneous pumping discharge of duration up to 800 ns with an aperture of 6×12 cm2 and current density of ∼300 A/cm2 has been realized in Ne(He,Ar)/Xe(Kr)/HCl mixtures. The proposed technique can be used in developing wide‐aperture excimer lasers and shows promise for creating high‐repetition‐rate systems of kilowatt average power.

Effects of spin polarization in the HgTe quantum well

Magnetoresistivity features connected with the spin level coincidences under tilted fields in a

Large magnetoresistance of a dilute p-Si/SiGe/Si quantum well in a parallel magnetic field

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Electronic instabilities in shape-memory alloys: Thermodynamic and electronic structure studies of the martensitic transition

conduction band of the HgTe quantum well were found to align along straight trajectories in a

Stand alone experimental setup for dc transport measurements

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A 10‐J electric‐discharge‐pumped phototriggered XeCl laser

plane between the field components perpendicular and parallel to the layer meaning a linear spin polarization dependence on magnetic field. Among the trajectories is a noticeable set of lines descending from a single point on the

Acoustoelectric effects in very high-mobility p-SiGe/Ge/SiGe heterostructure at low temperatures in high magnetic fields

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Magnetotransport in Double Quantum Well with Inverted Energy Spectrum: HgTe/CdHgTe

axis, which is shown to yield a field of the full spin polarization of the electronic system, in agreement with the data on the electron redistribution between spin subbands obtained from Fourier transforms of oscillations along circle trajectories in the

Magnetoresistivity and acoustoelectronic effects in a tilted magnetic field in p-Si/SiGe/Si structures with an anisotropic g factor

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