A. van der Ziel

Unified presentation of 1/f noise in electron devices: fundamental 1/f noise sources

1/f noise in semiconductors, semiconductor devices, and collision-free devices (like vacuum tubes) is presented from a unified point of view, using an extended version of the F.N. Hooge equation (Physica, vol. 83b, p.9, 1976), which is generalized to all collision-dominated systems involving mobility, diffusion, and cross-section fluctuations. It also applies to collision-free processes involving vacuum tubes, Schottky barrier diodes operating in the thermionic mode, and in devices such as p-i-n diodes in which collision processes are not the determining factor. A generalized schematic is given for expressing the noise spectrum S/sub 1/(f) in the external circuit in terms of distributed noise sources of the nonuniform devices in terms of alpha /sub H/, so the latter can be determined from the former. It is then found that the Hooge parameter. alpha /sub H/ introduced by this equation can be used as a general measure of the noisiness of a system or device. Several cases in which the noise does not obey the quantum 1/f noise theory are discussed. Measurements on many different devices are examined, and an attempt is made to correlate measured values of the Hooge parameter with the values calculated from P.H. Handels quantum theory of 1/f noise (1975, 1980). >

Theory and experiments of 1/f noise in Schottky-barrier diodes operating in the thermionic-emission mode

A 1/f noise model for diodes operating in the thermionic-emission mode under forward-bias conditions has been developed. The model is based on mobility and diffusivity fluctuations occurring in the space-charge region and accounts for the current-limiting role of the metal-semiconductor interface The bias dependence of the 1/f noise spectral density calculated from this model is in excellent agreement with the results of the authors experiments but is at variance with the predictions of a model developed by T.G.M. Kleinpenning (1979). From the experimental data, a value of 4.2*10/sup -9/ for the Hooge parameter is derived. This value is in good agreement with theoretical calculation for electrons in silicon. >

Presence of mobility-fluctuation 1f noise identified in silicon P+NP transistors

The magnitude and location of mobility-fluctuation 1f noise sources have been identified by means of biasing a PNP transistor in a common emitter configuration with first a high and then a low source resistance. Comparison of the two noise spectra at the same base currents shows the low source resistor bias isolates the collector noise sources, and the high source rsolates base noise sources. The magnitude of the observed collector 1f noise gives an α − 2 × 10−6 from Kleinpennings mobility-fluctuation theory. The base 1f noise gives an α ∼- 10−7 due to an impurity mobility reduction factor of about 100.

Representation of noise in linear two-ports

The equivalent noise circuit of a linear two-port can often be put in a more convenient form than the one given in the report by the IRE Subcommittee 7.9 on Noise issued in 1960.

Accurate expression for the noise temperature of common emitter microwave transistors

The standard equivalent II network noise treatment of microwave transistors with constant parameters suffers from two defects: 1) There is a considerable input conductance at high frequencies that varies as ω2and has full thermal noise associated with it; it increases the noise figure. 2) There is a considerable correlation between input noise and output noise at high frequencies, it reduces the noise figure, and its effect predominates. Both effects are taken into account in our treatment, and a final expression forF_{min} - 1is derived that is easily evaluated. Due to the fact that the two errors partly compensate each other, the older equivalent II network with constant elements is accurate within 20 percent up to the cutoff frequency fT.

Noise in junction- and MOS-FET's at high temperatures

Abstract At high temperatures a leakage current flows to the gate of a junction-FET and to the substrate of an MOS-FET. It is shown that in a junction-FET there is shot noise of the gate current and a strongly correlated noise component in the drain current. In an MOS-FET the effect of the leakage current is less significant, but there is a shot noise component at the drain. Leakage currents seriously effect the low-noise operation of junction-FETs whereas the effect in MOS-FETs is relatively small.

Mobility fluctuation1/f noise in silicon p+-n-p transistors

Abstract A study of the current dependence of base 1/ f noise and of collector 1/ f noise in p + -n-p transistors shows that the former is most likely of the mobility fluctuation 1/ f noise type and that the latter is most probably not of that type. The current dependence of 1/ f noise in transistors is a powerful tool in the interpretation of the noise.

The effect of gate-voltage-dependent mobility on thermal noise in MOSFETs☆

Abstract It is shown that while the gate-voltage-dependent mobility in MOSFETs has a very large effect upon the ( I ds , V g ) characteristic,, it has only a relatively small effect on the thermal noise parameter α sat = R n g max .

Noise associated with recombination in the emitter space charge region of transistors

Abstract We have measured the noise associated with the recombination current I R in the emitter space charge region of a p - n - p transistor at 100°K and find I EQ = ζI R , where ξ lies above 0.75 and increases with increasing emitter current. Lauritzens theory predicts ζ = 0.75; the reasons for this relatively small discrepancy are discussed.

Partition 1ƒ noise in pentodes and its quantum interpretation

Errors will occur in the determination of partition 1ƒ noise in pentodes, when the cathode 1ƒ noise is distributed between screen grid and anode in a manner different from the distribution of the ac signals. Tests show that such errors do exist, but usually they are not very large. A more accurate discussion of the Van der Ziel-Handel quantum 1ƒ noise model yields a correction to the formula for the partition noise spectrum Sp(ƒ) by a factor of about 0.85. Additional partition 1ƒ noise experiments are reported that fit reasonably well with the quantum 1ƒ noise theory. The partition 1ƒ noise of 6EC6 tubes seems to be a factor 5 larger than the quantum 1ƒ noise theory allows; it is most likely of non-quantum origin.