A. Virtanen

Angular Dependence of Heavy Ion Effects in Floating Gate Memory Arrays

Single, high energy, high LET, ions impacting on a Floating gate array on grazing or near-grazing angles lead to the creation of long traces of FGs with corrupted information. Up to 30 consecutive devices can be involved in the trace left by a single ion. We demonstrate that charge collection at multiple nodes can be expected as the technology advances. One of the major implications is that the widely adopted cosine law should be used with great care when dealing with modern devices, with sizes smaller than 100 nm.

TID and SEE Tests of an Advanced 8 Gbit NAND-Flash Memory

We report on the dose and operational mode dependence of error percentage, stand-by current, erase and write time of 8 Gbit / 4 Gbit NAND-flash memories as well as on their static, dynamic and SEFI cross sections.

Key Contributions to the Cross Section of NAND Flash Memories Irradiated With Heavy Ions

Heavy-ion irradiation of NAND flash memories under operating conditions leads to errors with complex, data-dependent signatures. We present upsets due to hits in the floating gate array and in the peripheral circuitry, discussing their peculiarities in terms of pattern dependence and annealing. We also illustrate single event functional interruptions, which lead to errors during erase and program operations. To account for all the phenomena we observe during and after irradiation, we propose an ldquoeffective cross section,rdquo which takes into account the array and peripheral circuitry contributions to the SEU sensitivity, as well as the operating conditions.

Levels in 110Pd, 112Pd, 114Pd and 116Pd from the beta decays of the on-line mass separated Rh isotopes☆

Abstract The energy levels of even 110–116 pd nuclei have been studied from β-decays of odd-odd 110–116 Rh isotopes produced at the on-line isotope separator IGISOL. Two β-decaying states with I π = 1 + and I ⩾4 have been identified in all the cases. New level schemes with preliminary spin assignments have been constructed for 112 Pd, 114 Pd and 116 Pd. Similarities with the level structures of their Xe isotones have been pointed out.

From the Reference SEU Monitor to the Technology Demonstration Module On-Board PROBA-II

The reference SEU Monitor system designed and presented in 2005 (R. H. SOslashrensen, F.-X. Guerre, and A. Roseng ldquoDesign, testing and calibration of a reference SEU monitor system,rdquo in Proc. RADECS, 2005, pp. B3-1-B3-7) has now been used by many researchers at many radiation test sites and has provided valuable calibration data in support of numerous projects. As some of these findings and results give new insight into improved inter-facility calibrations and provide additional inputs into ongoing SEE research, a few of the more interesting cases are presented. Furthermore the dasiadetector elementpsila, the Atmel AT60142F SRAM, now in a hybrid configuration, will form the key detector element in the Technology Demonstration Module (TDM) to be flown on-board the PROBA-II satellite, to be launched at the beginning of 2009. This flight opportunity extends the Reference SEU Database with both ground and space data, taken on the same device under identical operating conditions. Additionally, the Reference SEU Monitor concept is employed as the basis for the new Reference SEL Monitor system, currently under characterization and preparation for integration on the TDM. Ground SEU/SEL characterization of this latch-up experiment is also presented as well as the basic concept of the TDM, the PROBA-II Radiation Monitor module.

Heavy ion and proton test site at JYFL-accelerator laboratory

Abstract A radiation effects facility (RADEF) has been installed in the Accelerator Laboratory of the Department of Physics, University of Jyvaskyla (JYFL). The facility includes a special beam line dedicated to irradiation studies of semiconductor components and devices. It consists of a vacuum chamber including component movement apparatus and the necessary diagnostic equipment required for beam quality and intensity analysis. Construction of the station began in the summer of 1996, and in August 1997 the suitability of the station for space applications was evaluated. In this paper we introduce the accelerator laboratory along with the test station and its properties. We also describe the JYFL test site and the beams, which we use for the tests. In addition, we present the evaluation data and compare it to results measured elsewhere.

Vacancy-impurity complexes and diffusion of Ga and Sn in intrinsic and p-doped germanium

The charge state of mobile vacancy-impurity complexes in germanium was studied via the effect of p-type (Ga) doping on Ga and Sn diffusions. Tin diffusion retards significantly as a function of doping concentration suggesting diffusion dominated by negatively charged vacancy-Sn complexes. Gallium diffusion is practically unaffected by doping, suggesting diffusion dominated by vacancy-Ga complexes having the same charge state as isolated, negatively charged Ga ions. The evident two orders of magnitude higher diffusivity of group V elements in germanium than of group III and IV elements can be well explicated by means of the present findings.

Linear Energy Transfer of Heavy Ions in Silicon

Researchers performing radiation testing on electronic components often rely on semi-empirical prediction codes for determining the linear energy transfer (LET) (or electronic stopping force) of ions, without paying much attention to their reliability. However, it is seen that estimations calculated with different codes can have over 10% discrepancies, especially in the case of heavy ions with higher LET (e.g., xenon). As a consequence of the modern component fabrication techniques this has become an important issue when studying the radiation durability of electronics. In order to clarify this inconsistency, LET measurements for 131Xe and 82Kr in silicon have been undertaken and obtained results are presented, discussed and compared with earlier predicted data.

High-spin spectroscopy of the 142Eu, 143Eu and 144Eu nuclei

Abstract High-spin level schemes of the 142Eu, 143Eu and 144Eu nuclei have been investigated by in-beam γ-ray spectroscopic methods using the NORDBALL Compton-suppressed multi-detector array. The previously known schemes have been extended to considerably higher spin and excitation energy, up to I ≈ 30, Ex ⩾ 9 MeV in 142Eu, I = 75 2 , Ex = 15.6 MeV in 143Eu and I ≈ 40, Ex ⩾ 16 MeV in 144Eu. The level schemes are very complicated, characteristic of spherical or slightly oblate nuclei. Also, long cascades of stretched E2 transitions have been observed in all three nuclei. Plunger and DSAM lifetime results demonstrate high collectivity values up to ∼100 W.u. (up to ∼200 W.u. in 142Eu) in these E2 cascades and they are proposed to represent several crossing collective bands with the nucleus at triaxial shape of β2 ≈ 0.25 and γ ≈ 30°. Low parts of the level schemes have been discussed within the spherical shell model. Below 5.5 MeV excitation in 144Eu and 3.5 MeV in 143Eu practically all the observed levels are interpreted with shell model configurations of respectively two or four, and one or three quasiparticles.

Evaluation of Mechanisms in TID Degradation and SEE Susceptibility of Single- and Multi-Level High Density NAND Flash Memories

Heavy ion single-event measurements and total ionizing dose (TID) response for 8 Gb commercial NAND flash memories are reported. Radiation results of multi-level flash technology are compared with results from single-level flash technology. The single-level devices are less sensitive to single event upsets (SEUs) than multi-level devices. In general, these commercial high density memories exhibit less TID degradation compared to older generations of flash memories.