A. Yumak

Effect of europium content on physical properties of In2O3 thin films for sensitivity and optoelectronic applications

In2O3 : Eu thin films were successfully grown by spray pyrolysis. XRD studies showed that the films had In2O3 cubic structure with (004) preferential orientation and best crystal properties at 1.5% Eu doping level. The optical band gap energy decreased with Eu content around 4.1 eV. Urbach energy was of the order of 278 meV, it decreased with Eu content which indicates a decrease in the defects by doping. The dispersion of the refractive index was discussed. Raman spectroscopy showed the band positions corresponding to In2O3 cubic phase with a small shift related to europium incorporation within In2O3 matrix. PL measurements showed a large band which was located at 410 nm and related to the band-to-band transitions and other bands related to impurity levels. Finally, the electric conductivity was investigated depending on the effect of temperature. Activation energy was found to range from 45 to 60 meV for films which were prepared with 1% Eu content.

Dielectronic Recombination in He-like, Li-like and Be-like Iodine and KLM Resonances

DR rate coefficients for He-like, Li-like and Be-like Iodine ions and KLM resonances are calculated using MCBP approximation.

Level-resolved distorted-wave cross-sections of electron impact ionization of Ar5+

Electron impact ionization cross sections of Ar5+ were calculated using configuration-average (CADW) and level-resolved (LRDW) distorted-wave methods. Direct ionization cross-sections of 2s, 2p, 3s and 3p subshells were calculated within a CADW approximation. The contributions from the excitation autoionization channels were evaluated assuming single excitations from the 2s, 2p, and 3s subshells and in both CADW and LRDW methods. The radiative stabilization of the excitation autoionization channels were found to reduce the excitation autoionization by a small amount.