Abderrahim Ramdane

ZERO-LOSS MULTIPLE-QUANTUM-WELL ELECTROABSORPTION MODULATOR WITH VERY LOW CHIRP

We report on the integration on InP of an electroabsorption modulator and an amplifier using the same active layer. The amplifier compensates for the various losses and provides net fiber‐to‐fiber gain at 1.55 μm. The extinction ratio is 10.5 dB for a modulator drive voltage of 2 V. The small‐signal bandwidth is 18 GHz. In addition, the effective chirp parameter is as low as 0.16.

The role of N2 and H2 as carrier gas on the selective area MOVPE of InP-based heterostructures using TBAs and TBP as group-V sources

Abstract Hydrogen and nitrogen have been employed as carrier gases for the selective growth of InP-based materials on patterned substrates using tertiarybutyl-arsine (TBAs) and -phosphine (TBP) as alternative group-V sources at different reactor pressures. The properties of the deposited layers have been found to be mainly determined by the diffusion coefficient in the vapour phase, which increases by reducing the reactor pressure or using H2 instead of N2. A higher edge growth, combined with a smaller zone of enhanced growth and, where appropriate, In-enrichment near the masks was detected at atmospheric pressure deposition and for the use of N2, respectively. Furthermore a higher selectivity has been observed for both carriers at reduced reactor pressures and when using H2 instead of N2. Nitrogen as carrier gas offers an additional independent parameter to control the properties of selectively deposited layers and reduces the safety risks of the MOVPE process especially when being combined with less toxic group-V sources.

Quantum well bandgap engineering for 1.5 μm telecom applications

After briefly presenting the advantages of using strained layers for long wavelength lasers, a review of some approaches devised for polarization independence of guided-wave in-line semiconductor optical amplifiers and electroabsorption modulators is given, together with recent test-bed applications. The achievement of photonic integrated circuits based on quantum well tuning is finally reported.

Monolithic integration of multiple quantum well DFB lasers and electroabsorption modulators

Advanced fibre optics telecommunication systems rely on high performance components amongst which photonic integrated circuits (PICs) play a major role. In particular, there has been a growing need for low chirp optical sources, such as externally modulated distributed feedback (DFB) lasers. In this paper, the various monolithic integration schemes of multiple quantum well DFB lasers and electro-absorption modulators are reviewed and typical applications of these devices are briefly presented.