Abdul Y. Elezzabi

Observation of few-cycle, strong-field phenomena in surface plasmon fields

We present experimental evidence of the generation of few-cycle propagating surface plasmon polariton (SPP) wavepackets. Ultrashort plasmonic pulses were generated by few-cycle laser pulses of 5.5 fs to 6.5 fs duration on a thin silver film of 50 nm thickness coated on the face of a right-angle prism to enable Kretschmann-type SPP coupling. SPP pulses were characterized by an autocorrelation-type measurement based on fourth order, nonlinear electron photoemission induced by the SPP field. The evaluation of the measured ultrashort, fringe-resolved autocorrelation curve of the SPP wavepacket (Fig. 1a) resulted in a retrieved SPP pulse length of 6.5 fs, as evidenced by the reconstructed curve in Fig. 1b. This first demonstration of the generation of few-cycle propagating SPP wavepackets on a metal surface has important applications in ultrafast plasmonics.

Frequency selective vertical nanoplasmonic interconnects

A nanoscale silicon plasmonic device was examined for vertical integration of nanoplasmonic circuits through vertically coupled ring resonators. Devices with planar footprints as small as 1.00μm2 were examined for frequency selective signal transfer.

Experimental realization of sub-wavelength plasmonic slot waveguides and couplers on Silicon-on-Insulator

Sub-wavelength plasmonic slot waveguides and broadband couplers were monolithically integrated with Si waveguides on SOI. Plasmonic waveguide propagation length of 6λ was achieved along with a 30% coupling efficiency between the Si and plasmonic waveguides.

Ultrafast all-optical switching in Silicon-based plasmonic waveguides

We propose and analyze 3- and 5-layer sub-wavelength Silicon-based plasmonic waveguide switches. Above-bandgap femtosecond pump pulses are used to modulate 1550nm signals with switching time ∼5ps and high on/off contrast ratio of 23dB.

Broadband terahertz pulse propagation in strongly scattering random media

We report on studies of terahertz pulse propagation in strongly scattering random media. The experimental delay, pulse distortion, spectral decay, and power attenuation are in excellent agreement with predictions from a Monte Carlo model.

A two-dimensional drift-diffusion model of THz emission from n-GaAs and InAs surfaces in a magnetic field (Invited Paper)

We present a model of THz emission enhancement from femtosecond pulse excited n-GaAs and InAs surfaces with the application of a dc magnetic field. The far-field THz emission at different optical excitation densities, magnetic field strengths, and magnetic field orientations is determined. The model accurately describes the power dependence of THz emission from n-GaAs and InAs surfaces for magnetic field strengths up to ±10 T and ±6 T, respectively. THz emission saturation in both semiconductors for optical excitation densities from 40 nJ/cm2 to 2.2 μJ/cm2 are in accordance with previously reported experimental data. The model provides a useful tool for the description of ultra-fast processes in semiconductors.