Abhay Chaturvedi

Double Balanced Diode Ring Mixer for Ultra-wideband System

A double balanced diode ring mixer is presented for MB (multiband) UWB (ultra wideband) system. Diode ring mixers are suitable for economical front end of superhetrodyne receivers. Mixer is designed for RF (radio frequency) of 3.35 GHz and IF (Intermediate frequency) of 250 MHz. Proposed mixer is simulated at RF power level ranges from -50 dBm to -20 dBm with a reference RF power level of -42 dBm. Simulation results show conversion loss of 5.022 dB and OIP3 (third order output intercept point) of 4.737 dBm at RF power level of -42 dBm. Mixer effectively suppresses the harmonic and IMD (inter-modulation) products at IF port. Mixer is simulated by using the spice parameters of beam lead schottky diode HSCH-5531 of Avago Technologies, USA.

A 3.1-10.6 GHz CMOS Two Stage Cascade Topology Low-Noise Amplifier for UWB System

The paper presents a low noise amplifier (LNA) for ultra-wideband (UWB) frequency range from 3.1 GHz to 10.6 GHz using two stage cascade topology with three section band pass Chebyshev filter. Proposed LNA achieves a maximum gain of 20 dB, a minimum noise figure (NF) of 2.89 dB and IIP3 of 10 dBm with a wide input matching. The power consumption is 12 mW under a 1.8-V DC power supply. The proposed UWB LNA is implemented using 0.18 μmCMOS technology.

Conversion gain and linearity enhancement of active CMOS mixer for wireless applications

This paper presents an improved circuit of CMOS based Gilbert double balanced mixer. Proposed mixer design technique is aimed to achieve high conversion gain and linearity with low power consumption. Modified inductive source degeneration technique is used for the linearity improvement and multiple transconductance stage technique is used to improve the conversion gain of the mixer. The range of RF frequency is 500 MHz to 2700 MHz, LO frequency varies from 650 MHz to 2095 MHz and intermediate frequency (IF) varies from 150 MHz to 605 MHz. The circuit provides an Input Third Order Intercept point (IIP3) of 14.365 dBm at 2.7 GHz RF frequency. The conversion gain of 10.575 is achieved. The proposed mixer is implemented using 0.18μm CMOS process using 2.2V supply.

2.4 GHz active CMOS mixer for Bluetooth and Zigbee receiver systems

This paper presents an improved circuit of active CMOS based Gilbert double balanced differential mixer used in Bluetooth and Zigbee receiver systems. Proposed mixer design technique is aimed to achieve high conversion gain and linearity with low power consumption. Modified resistive source degeneration technique is used for the linearity improvement and active load with resonator circuit is used to enhance the conversion gain of the mixer. The range of RF frequency is 2.4GHz to 2.48 GHz and intermediate frequency (IF) varies from 1MHz to 2MHz. The Input Third Order Intercept point (IIP3) provided by the circuit is -7.311dBm at 2.48 GHz RF frequency. The conversion gain provided by the proposed mixer is 10.737. The circuit is implemented using 0.18μm CMOS process using 2.2V supply.

A 3.432 GHz Low-Power High-Gain Down-Conversion Gilbert Cell Mixer in 0.18 μm CMOS Technology for UWB Application

This work presents low-power- and high-gain CMOS down-conversion Gilbert cell mixer for ultrawide band application, designed in 0.18 μm CMOS technology. Inductive source degeneration is used at the RF trans-conductance stage of Gilbert cell mixer to increase its linearity. Differential LC matching is used at RF and LO stage to increase the conversion gain of mixer. Output buffer is used at the load to achieve 50 ohm impedance match to improve the return-loss of the mixer. The proposed mixer shows low reflection coefficient up to −19 dB for entire band ranges from 3.168 to 3.696 GHz frequency. The proposed mixer works at DC supply of 1.5 V with low power consumption. Simulation results show that the mixer achieves the conversion gain of 10.60 dB, 1 dB compression point of −10.596, IIP3 is +0.056 dBm and matched RF (input) port impedance of 50.7 ohm.

A high gain down-conversion mixer in 0.18um CMOS technology for ultra wideband applications

In this paper, a high gain as well as highly linear down-conversion mixer is presented for UWB applications. The proposed mixer circuit is implemented and simulated in a 0.18μm CMOS technology using Advanced Design System (ADS) software. The core of the proposed mixer is based on the Gilbert cell (double-balanced) mixer with source degeneration (inductive) at the RF driver stage and the inductors between the RF (or driver) stage and the LO (or switching) stage. An LC type impedance matching network is employed at the RF port to minimize reflections at RF port. The mixer circuit is designed for a RF frequency of 3.35 GHz, LO frequency of 3.60 GHz, and IF frequency of 250 MHz. The proposed mixer circuit achieves a conversion gain of 11.679 dB, an IIP3 of -1.536 dBm, 1dB compression point of -12.764 dBm and a single sideband noise figure of 5.460 dB while operating at a DC supply of 1.8V.

A low-voltage, low-power bulk-driven mixer using 0.18 μm CMOS technology

A low voltage, low power CMOS down-conversion mixer is presented for Ultra-wideband (UWB) systems. The proposed mixer is designed for a 3.35 GHz input RF signal and 250 MHz output IF signal in 0.18pm CMOS technology and simulated using Advanced design system (ADS) software. The proposed mixer is based on the conventional Gilbert cell architecture with bulk driven technique. Two element LC matching topology is used at the LO switching stage to improve the performance of the mixer. The proposed mixer exhibits maximum conversion gain of 7.10 dB, double sideband noise figure (DSB NF) of 2.5 dB, HP3 of -2.2 dBm, 1 dB gain compression point of -20.6 dBm. The power consumed by the circuit is 0.195 mW at a DC supply of 1V.