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Dive into the research topics where Aboulaye Traore is active.

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Featured researches published by Aboulaye Traore.


Applied Physics Letters | 2014

Zr/oxidized diamond interface for high power Schottky diodes

Aboulaye Traore; P. Muret; Alexandre Fiori; David Eon; E. Gheeraert; Julien Pernot

High forward current density of 103 A/cm2 (at 6 V) and a breakdown field larger than 7.7 MV/cm for diamond diodes with a pseudo-vertical architecture, are demonstrated. The power figure of merit is above 244 MW/cm2 and the relative standard deviation of the reverse current density over 83 diodes is 10% with a mean value of 10−9 A/cm2. These results are obtained with zirconium as Schottky contacts on the oxygenated (100) oriented surface of a stack comprising an optimized lightly boron doped diamond layer on a heavily boron doped one, epitaxially grown on a Ib substrate. The origin of such performances are discussed.


Applied Surface Science | 2017

Atomic composition of WC/ and Zr/O-terminated diamond Schottky interfaces close to ideality

Jose Carlos Piñero; D. Araújo; Alexandre Fiori; Aboulaye Traore; M.P. Villar; David Eon; P. Muret; Julien Pernot; Tokuyuki Teraji


Physica Status Solidi (a) | 2015

Electrical activity of (100) n-type diamond with full donor site incorporation of phosphorus

M.-A. Pinault-Thaury; Ingrid Stenger; François Jomard; J. Chevallier; J. Barjon; Aboulaye Traore; David Eon; Julien Pernot


Physica Status Solidi (a) | 2014

Metal–oxide–diamond interface investigation by TEM: Toward MOS and Schottky power device behavior

Jose Carlos Piñero; D. Araújo; Aboulaye Traore; G. Chicot; Aurélien Maréchal; P. Muret; Maria de la Paz Alegre; M.P. Villar; Julien Pernot


Physica Status Solidi (a) | 2016

Effect of n- and p-type doping concentrations and compensation on the electrical properties of semiconducting diamond

Aboulaye Traore; Satoshi Koizumi; Julien Pernot


Physica Status Solidi (a) | 2015

Hole injection contribution to transport mechanisms in metal/p−/p++ and metal/oxide/p−/p++ diamond structures

P. Muret; David Eon; Aboulaye Traore; Aurélien Maréchal; Julien Pernot; E. Gheeraert


Symposium de Genie Electrique | 2016

La diode Schottky en diamant : le présent et le futur

David Eon; Julien Pernot; Aboulaye Traore; Nicolas Rouger; E. Gheeraert


Third French-Japanese workshop on diamond power devices | 2015

Interplay of bonding and electronic properties at diamond interfaces

Pierre Muret; Aboulaye Traore; Gauthier Chicot


Physica Status Solidi (a) | 2014

Temperature and density dependence metal–oxide–diamond interface investigation by TEM: Toward MOS and Schottky power device behavior

Jose Carlos Piñero; D. Araújo; Aboulaye Traore; Gauthier Chicot; Aurélien Maréchal; P. Muret; Maria de la Paz Alegre; M.P. Villar; Julien Pernot


Archive | 2014

METHOD FOR PRODUCING A SCHOTTKY DIODE ON A DIAMOND SUBSTRATE

David Eon; E. Gheeraert; P. Muret; Julien Pernot; Aboulaye Traore

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Julien Pernot

Centre national de la recherche scientifique

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David Eon

Centre national de la recherche scientifique

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E. Gheeraert

Centre national de la recherche scientifique

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P. Muret

Centre national de la recherche scientifique

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Alexandre Fiori

National Institute for Materials Science

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E. Bustarret

Centre national de la recherche scientifique

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Franck Omnès

Joseph Fourier University

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Aurélien Maréchal

Centre national de la recherche scientifique

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