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Dive into the research topics where Achim Bittner is active.

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Featured researches published by Achim Bittner.


Applied Physics Letters | 2012

Impact of the surface-near silicon substrate properties on the microstructure of sputter-deposited AlN thin films

Michael Schneider; Achim Bittner; F. Patocka; Michael Stöger-Pollach; E. Halwax; Ulrich Schmid

In micro-/nanomachined devices and systems, aluminum nitride (AlN) thin films are widely used due to their piezoelectric properties. This work evaluates the potential of modifying the interface between the AlN thin film and the silicon (Si) wafer serving as bottom electrode for optimized crystallographic orientation and, hence, improved electrical and piezoelectric properties. The films were analyzed using temperature-dependant leakage current measurements, transmission electron microscopy, and x-ray diffraction. By preconditioning of the Si substrate surface applying sputter etching prior to film deposition, leakage current levels are substantially decreased and an increased (002) orientation of the AlN grains is observed.


Applied Physics Letters | 2014

Characterization of a roof tile-shaped out-of-plane vibrational mode in aluminum-nitride-actuated self-sensing micro-resonators for liquid monitoring purposes

Martin Kucera; E. Wistrela; G. Pfusterschmied; V. Ruiz-Díez; T. Manzaneque; J. L. Sánchez-Rojas; J. Schalko; Achim Bittner; Ulrich Schmid

This Letter reports on an advanced out-of-plane bending mode for aluminum-nitride (AlN)-actuated cantilevers. Devices of different thickness were fabricated and characterized by optical and electrical measurements in air and liquid media having viscosities up to 615 cP and compared to the classical out-of-plane bending and torsional modes. Finite element method eigenmode analyses were performed showing excellent agreement with the measured mode shapes and resonance frequencies. Quality factors (Q-factor) and the electrical behavior were evaluated as a function of the cantilever thickness. A very high Q-factor of about 197 was achieved in deionized water at a low resonance frequency of 336 kHz, being up to now, the highest quality factor reported for cantilever sensors in liquid media. Compared to the quality factor of the common fundamental out-of-plane bending mode, a 5 times higher Q-factor was achieved. Furthermore, the strain related conductance peak of the roof tile-shaped mode is superior. Compared ...


Applied Physics Letters | 2014

High performance AlScN thin film based surface acoustic wave devices with large electromechanical coupling coefficient

Wenbo Wang; P.M. Mayrhofer; Xingli He; M. Gillinger; Zhi Ye; Xiaozhi Wang; Achim Bittner; Ulrich Schmid; Jikui Luo

AlN and AlScN thin films with 27% scandium (Sc) were synthesized by DC magnetron sputtering deposition and used to fabricate surface acoustic wave (SAW) devices. Compared with AlN-based devices, the AlScN SAW devices exhibit much better transmission properties. Scandium doping results in electromechanical coupling coefficient, K2, in the range of 2.0% ∼ 2.2% for a wide normalized thickness range, more than a 300% increase compared to that of AlN-based SAW devices, thus demonstrating the potential applications of AlScN in high frequency resonators, sensors, and high efficiency energy harvesting devices. The coupling coefficients of the present AlScN based SAW devices are much higher than that of the theoretical calculation based on some assumptions for AlScN piezoelectric material properties, implying there is a need for in-depth investigations on the material properties of AlScN.


Journal of Micromechanics and Microengineering | 2013

Q-factor enhancement for self-actuated self-sensing piezoelectric MEMS resonators applying a lock-in driven feedback loop

Martin Kucera; T. Manzaneque; J. L. Sánchez-Rojas; Achim Bittner; Ulrich Schmid

This paper presents a robust Q-control approach based on an all-electrical feedback loop enhancing the quality factor of a resonant microstructure by using the self-sensing capability of a piezoelectric thin film actuator made of aluminium nitride. A lock-in amplifier is used to extract the feedback signal which is proportional to the piezoelectric current. The measured real part is used to replace the originally low-quality and noisy feedback signal to modulate the driving voltage of the piezoelectric thin-film actuator. Since the lock-in amplifier reduces the noise in the feedback signal substantially, the proposed enhancement loop avoids the disadvantage of a constant signal-to-noise ratio, which an analogue feedback circuit usually suffers from. The quality factor was increased from the intrinsic value of 1766 to a maximum of 34?840 in air. These promising results facilitate precise measurements for self-actuated and self-sensing MEMS cantilevers even when operated in static viscous media.


Journal of Applied Physics | 2014

The impact of argon admixture on the c-axis oriented growth of direct current magnetron sputtered ScxAl1−xN thin films

P. M. Mayrhofer; C. Eisenmenger-Sittner; Michael Stöger-Pollach; H. Euchner; Achim Bittner; Ulrich Schmid

The piezoelectric properties of wurtzite aluminium nitride (w-AlN) are enhanced by alloying with scandium (Sc), thus offering superior properties for applications in micro electro-mechanical systems devices. ScxAl1−xN thin films have been prepared by DC reactive magnetron sputtering on Si (100) substrates from a single target. When targeting a concentration range from x = 0 up to x = 0.15, the preparation conditions have been optimized by varying the Ar/N2 ratio in the sputtering gas. To incorporate an increasing Sc concentration, a higher Ar/N2 ratio has to be applied during the deposition process. Hence, the argon concentration in the sputtering gas becomes a crucial parameter for microstructure-related parameters. To determine phase purity, degree of c-axis orientation, lattice parameter, and grain size, the ScxAl1−xN thin films were investigated by techniques, such as scanning electron microscopy, transmission electron microscopy, and X-ray diffraction.


Journal of Micromechanics and Microengineering | 2015

Impact of sputter deposition parameters on molybdenum nitride thin film properties

Laura Stöber; Jens Peter Konrath; S Krivec; F. Patocka; Sabine Schwarz; Achim Bittner; Michael Schneider; Ulrich Schmid

Molybdenum and molybdenum nitride thin films are presented, which are deposited by reactive dc magnetron sputtering. The influence of deposition parameters, especially the amount of nitrogen during film synthesization, to mechanical and electrical properties is investigated. The crystallographic phase and lattice constants are determined by x-ray diffraction analyses. Further information on the microstructure as well as on the biaxial film stress are gained from techniques such as transmission electron microscopy, scanning electron microscopy and the wafer bow. Furthermore, the film resistivity and the temperature coefficient of resistance are measured by the van der Pauw technique starting from room temperature up to 300 °C. Independent of the investigated physical quantity, a dominant dependence on the sputtering gas nitrogen content is observed compared to other deposition parameters such as the plasma power or the sputtering gas pressure in the deposition chamber.


Optics Express | 2014

Arrays of open, independently tunable microcavities

Christian Derntl; Michael Schneider; J. Schalko; Achim Bittner; Jörg Schmiedmayer; Ulrich Schmid; Michael Trupke

Optical cavities are of central importance in numerous areas of physics, including precision measurement, cavity optomechanics and cavity quantum electrodynamics. The miniaturisation and scaling to large numbers of sites is of interest for many of these applications, in particular for quantum computation and simulation. Here we present the first scaled microcavity system which enables the creation of large numbers of highly uniform, tunable light-matter interfaces using ions, neutral atoms or solid-state qubits. The microcavities are created by means of silicon micro-fabrication, are coupled directly to optical fibres and can be independently tuned to the chosen frequency, paving the way for arbitrarily large networks of optical microcavities.


Journal of Applied Physics | 2015

Impact of annealing temperature on the mechanical and electrical properties of sputtered aluminum nitride thin films

M. Gillinger; Michael Schneider; Achim Bittner; P. Nicolay; Ulrich Schmid

Aluminium nitride (AlN) is a promising material for challenging sensor applications such as process monitoring in harsh environments (e.g., turbine exhaust), due to its piezoelectric properties, its high temperature stability and good thermal match to silicon. Basically, the operational temperature of piezoelectric materials is limited by the increase of the leakage current as well as by enhanced diffusion effects in the material at elevated temperatures. This work focuses on the characterization of aluminum nitride thin films after post deposition annealings up to temperatures of 1000 °C in harsh environments. For this purpose, thin film samples were temperature loaded for 2 h in pure nitrogen and oxygen gas atmospheres and characterized with respect to the film stress and the leakage current behaviour. The X-ray diffraction results show that AlN thin films are chemically stable in oxygen atmospheres for 2 h at annealing temperatures of up to 900 °C. At 1000 °C, a 100 nm thick AlN layer oxidizes complete...


international microwave symposium | 2013

A finite 3D field simulation method for permittivity gradient implementation of a novel porosification process in LTCC

Armin Talai; Frank Steinhäußer; Ulrich Schmid; Robert Weigel; Achim Bittner; Alexander Koelpin

High frequency substrates show a manifold variety of complex permittivities for different applications. Recent research results demonstrated the possibility of local decrease of the permittivity on LTCC by chemical etching processes, which enables the design of high quality antennas on LTCC. This paper shows a novel approach on the determination of the quantitative reduction of the effective permittivity by scanning electron microscope analyses in combination with finite 3D field simulations of the resulting inhomogeneous material. By the characterization of two different porosified LTCCs it could be shown that this process is suitable for direct antenna integration on glass-ceramic substrates with enhanced values of relative permittivities.


Journal of Micromechanics and Microengineering | 2015

Temperature dependent performance of piezoelectric MEMS resonators for viscosity and density determination of liquids

G. Pfusterschmied; Martin Kucera; E. Wistrela; T. Manzaneque; V. Ruiz-Díez; J. L. Sánchez-Rojas; Achim Bittner; Ulrich Schmid

It is the objective of this paper to report on the performance of piezoelectric MEMS resonators for viscosity and density measurements at elevated temperatures. A custom-built temperature controlled measurement setup is designed for fluid temperatures up to 100 °C. Piezoelectric single-side clamped resonators are fabricated, excited in 2nd order of the roof tile-shaped mode (13-mode) and exposed to several liquids (i.e. D5, N10, N35, PAO8, olive oil, ester oil and N100). At the next step, these results are analysed applying a straightforward evaluation model, thus demonstrating that with piezoelectric MEMS resonators the density (i.e. from kg m−3 to kg m−3) and viscosity (i.e. from mPa s to mPa s) values of liquids can be precisely determined in a wide range. Compared to standard measurement techniques, the results show for the first parameter a mean deviation of about 1.04% at 100 °C for all the liquids investigated. For the second parameter, the standard evaluation model implies a systematic deviation in viscosity with respect to the calibration being N35 in this study. This inherent lack of strength has a significant influence on the accuracy, especially at 100 °C due to fluids having a viscosity reduced by a factor of 30 for N100 compared to room temperature. This leads to relative deviations of about 23% at 100 °C and indicates the limits of the evaluation model.

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Michael Schneider

Vienna University of Technology

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Martin Kucera

Vienna University of Technology

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Frank Steinhäußer

Vienna University of Technology

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Dieter Schwanke

Vienna University of Technology

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Alexander Koelpin

Brandenburg University of Technology

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Armin Talai

University of Erlangen-Nuremberg

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Robert Weigel

University of Erlangen-Nuremberg

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E. Wistrela

Vienna University of Technology

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