Adem Kocyigit

Temperature-dependent C-V characteristics of Au/ZnO/n-Si device obtained by atomic layer deposition technique

Since the importance of Schottkky devices, Au/ZnO/n-Si device were obtained, and the capacitance–voltage (C-V) and conductance-voltage (G-V) characteristics of Au/ZnO/n-Si device were studied using admittance spectroscopy at changing temperature from 160 to 340xa0K with 20xa0K intervals and −1 to +2xa0V bias voltage range. The interface thin film ZnO layer was deposited on the n-type Si wafer by atomic layer deposition technique (ALD) in order to obtain homogenous interface layer. The layer thickness of ZnO was taken as 10xa0nm by the resulting ZnO film growth rate at about 1.45xa0Å per cycle. This thin film layer was characterized with XRD and AFM analyses. It can be seen from the C-V curves of the device that the capacitance values increased in depletion region with increasing temperature and exhibited peaks towards to forward biases after 240xa0K temperature. The changing of capacitance values confirmed re-ordering and re-structuring of charges in the interface of the device with changing temperature. The G-V curves of the device also increased with increasing temperature and towards to forward bias voltages due to increasing free charges in the interface. The series resistance (

Current–voltage characteristics of Au/ZnO/n-Si device in a wide range temperature

{R}_{s}

Frequency-Dependent Electrical Characterization of GO-SiO2 Composites in a Schottky Device

Rs) of the device was taken into account to understand its effect on main electrical parameters, and it could be seen from these results that the

Effect of different sound atmospheres on SnO2:Sb thin films prepared by dip coating technique

{R}_{s}

Morphological and electrical properties of ATSP/ p -Si photodiode

Rs strongly depends on the device temperature. The impedance (Z) values decreased with changing from −1 to +2xa0V bias voltages and increasing temperature. The barrier height which was obtained from the C−2-V plots increased a slope of 0.00108xa0eV/K with a decrease in temperature from 160 to 340xa0K. It can be concluded that the Au/ZnO/n-Si device may be used and improved for next technological applications such as capacitor and memristor.

The structural analysis of MWCNT-SiO2 and electrical properties on device application

The Pr and Ta separately doped FTO (10 at.% F incorporated SnO2) films are fabricated via spray pyrolysis. The microstructural, topographic, optical, and electrical features of fluorine-doped TO (FTO) films are investigated as functions of Pr and Ta dopant concentrations. The x-ray diffraction (XRD) measurements reveal that all deposited films show polycrystalline tin oxide crystal property. FTO film has (200) preferential orientation, but this orientation changes to (211) direction with Pr and Ta doping ratio increasing. Atomic force microscopy (AFM) and scanning electron microscopy (SEM) analyses show that all films have uniform and homogenous nanoparticle distributions. Furthermore, morphologies of the films depend on the ratio between Pr and Ta dopants. From ultraviolet-visible (UV-Vis) spectrophotometer measurements, it is shown that the transmittance value of FTO film decreases with Pr and Ta doping elements increasing. The band gap value of FTO film increases only at 1 at.% Ta doping level, it drops off with Pr and Ta doping ratio increasing at other doped FTO films. The electrical measurements indicate that the sheet resistance value of FTO film initially decreases with Pr and Ta doping ratio decreasing and then it increases with Pr and Ta doping ratio increasing. The highest value of figure of merit is obtained for 1 at.% Ta- and Pr-doped FTO film. These results suggest that Pr- and Ta-doped FTO films may be appealing candidates for TCO applications.