Adhimoorthy Saravanan

Bias-Enhanced Nucleation and Growth Processes for Ultrananocrystalline Diamond Films in Ar/CH4 Plasma and Their Enhanced Plasma Illumination Properties

Microstructural evolution of ultrananocrystalline diamond (UNCD) films in the bias-enhanced nucleation and growth (BEN-BEG) process in CH4/Ar plasma is systematically investigated. The BEN-BEG UNCD films possess higher growth rate and better electron field emission (EFE) and plasma illumination (PI) properties than those of the films grown without bias. Transmission electron microscopy investigation reveals that the diamond grains are formed at the beginning of growth for films grown by applying the bias voltage, whereas the amorphous carbon forms first and needs more than 30 min for the formation of diamond grains for the films grown without bias. Moreover, the application of bias voltage stimulates the formation of the nanographite phases in the grain boundaries of the UNCD films such that the electrons can be transported easily along the graphite phases to the emitting surface, resulting in superior EFE properties and thus leading to better PI behavior. Interestingly, the 10 min grown UNCD films under bias offer the lowest turn-on field of 4.2 V/μm with the highest EFE current density of 2.6 mA/cm(2) at an applied field of 7.85 V/μm. Such superior EFE properties attained for 10 min bias grown UNCD films leads to better plasma illumination (PI) properties, i.e., they show the smallest threshold field of 3300 V/cm with largest PI current density of 2.10 mA/cm(2) at an applied field of 5750 V/cm.

Low temperature synthesis of diamond-based nano-carbon composite materials with high electron field emission properties

A diamond-based nano-carbon composite (d/NCC) material, which contains needle-like diamond grains encased with the nano-graphite layers, was synthesized at low substrate temperature via a bias enhanced growth process using CH4/N2 plasma. Such a unique granular structure renders the d/NCC material very conductive (σ = 714.8 S/cm), along with superior electron field emission (EFE) properties (E0 = 4.06 V/μm and Je = 3.18 mA/cm2) and long lifetime (τ = 842 min at 2.41 mA/cm2). Moreover, the electrical conductivity and EFE behavior of d/NCC material can be tuned in a wide range that is especially useful for different kind of applications.

Heterogranular-Structured Diamond–Gold Nanohybrids: A New Long-Life Electronic Display Cathode

In the age of hand-held portable electronics, the need for robust, stable and long-life cathode materials has become increasingly important. Herein, a novel heterogranular-structured diamond-gold nanohybrids (HDG) as a long-term stable cathode material for field-emission (FE) display and plasma display devices is experimentally demonstrated. These hybrid materials are electrically conductive that perform as an excellent field emitters, viz. low turn-on field of 2.62 V/μm with high FE current density of 4.57 mA/cm(2) (corresponding to a applied field of 6.43 V/μm) and prominently high lifetime stability lasting for 1092 min revealing their superiority on comparison with the other commonly used field emitters such as carbon nanotubes, graphene, and zinc oxide nanorods. The process of fabrication of these HDG materials is direct and easy thereby paving way for the advancement in next generation cathode materials for high-brightness FE and plasma-based display devices.

Bias-enhanced post-treatment process for enhancing the electron field emission properties of ultrananocrystalline diamond films

The electron field emission (EFE) properties of ultrananocrystalline diamond films were markedly improved via the bias-enhanced plasma post-treatment (bep) process. The bep-process induced the formation of hybrid-granular structure of the diamond (bep-HiD) films with abundant nano-graphitic phase along the grain boundaries that increased the conductivity of the films. Moreover, the utilization of Au-interlayer can effectively suppress the formation of resistive amorphous-carbon (a-C) layer, thereby enhancing the transport of electrons crossing the diamond-to-Si interface. Therefore, bep-HiD/Au/Si films exhibit superior EFE properties with low turn-on field of E0 = 2.6 V/μm and large EFE current density of Je = 3.2 mA/cm2 (at 5.3 V/μm).

Highly Conductive Diamond–Graphite Nanohybrid Films with Enhanced Electron Field Emission and Microplasma Illumination Properties

Bias-enhanced nucleation and growth of diamond-graphite nanohybrid (DGH) films on silicon substrates by microwave plasma enhanced chemical vapor deposition using CH4/N2 gas mixture is reported herein. It is observed that by controlling the growth time, the microstructure of the DGH films and, thus, the electrical conductivity and the electron field emission (EFE) properties of the films can be manipulated. The films grown for 30 min (DGHB30) possess needle-like geometry, which comprised of a diamond core encased in a sheath of sp(2)-bonded graphitic phase. These films achieved high conductivity of σ = 900 S/cm and superior EFE properties, namely, low turn-on field of 2.9 V/μm and high EFE current density of 3.8 mA/cm(2) at an applied field of 6.0 V/μm. On increasing the growth time to 60 min (the DGHB60), the acicular grain growth ceased and formed nanographite clusters or defective diamond clusters (n-diamond). Even though DGHB60 films possess higher electrical conductivity (σ = 1549 S/cm) than the DGHB30 films, the EFE properties degraded. The implication of this result is that higher conductivity by itself does not guarantee better EFE properties. The nanosized diamond grains with needle-like geometry are the most promising ones for the electron emission, exclusively when they are encased in graphene-like layers. The salient feature of such materials with unique granular structure is that their conductivity and EFE properties can be tuned in a wide range, which makes them especially useful in practical applications.

Origin of graphitic filaments on improving the electron field emission properties of negative bias-enhanced grown ultrananocrystalline diamond films in CH4/Ar plasma

Microstructural evolution of bias-enhanced grown (BEG) ultrananocrystalline diamond (UNCD) films has been investigated using microwave plasma enhanced chemical vapor deposition in gas mixtures of CH4 and Ar under different negative bias voltages ranging from −50 to −200 V. Scanning electron microscopy and Raman spectroscopy were used to characterize the morphology, growth rate, and chemical bonding of the synthesized films. Transmission electron microscopic investigation reveals that the application of bias voltage induced the formation of the nanographitic filaments in the grain boundaries of the films, in addition to the reduction of the size of diamond grains to ultra-nanosized granular structured grains. For BEG-UNCD films under −200 V, the electron field emission (EFE) process can be turned on at a field as small as 4.08 V/μm, attaining a EFE current density as large as 3.19 mA/cm2 at an applied field of 8.64 V/μm. But the films grown without bias (0 V) have mostly amorphous carbon phases in the grain boundaries, possessing poorer EFE than those of the films grown using bias. Consequently, the induction of nanographitic filaments in grain boundaries of UNCD films grown in CH4/Ar plasma due to large applied bias voltage of −200 V is the prime factor, which possibly forms interconnected paths for facilitating the transport of electrons that markedly enhance the EFE properties.

Self-Assembled Hierarchical Interfaces of ZnO Nanotubes/Graphene Heterostructures for Efficient Room Temperature Hydrogen Sensors

Herein, we report the novel nanostructural interfaces of self-assembled hierarchical ZnO nanotubes/graphene (ZNT/G) with three different growing times of ZNTs on graphene substrates (namely, SH1, SH2, and SH3). Each sample was fabricated with interdigitated electrodes to form hydrogen sensors, and their hydrogen sensing properties were comprehensively studied. The systematic investigation revealed that SH1 sensor exhibits an ultrahigh sensor response even at a low detection level of 10 ppm (14.3%) to 100 ppm (28.1%) compared to those of the SH2 and SH3 sensors. The SH1 sensor was also found to be well-retained with repeatability, reliability, and long-term stability of 90 days under hydrogenation/dehydrogenation processes. This outstanding enhancement in sensing properties of SH1 is attributed to the formation of a strong metalized region in the ZNT/G interface due to the inner/outer surfaces of ZNTs, establishing a multiple depletion layer. Furthermore, the respective band models of each nanostructure were also purposed to describe their heterostructure, which illustrates the hydrogen sensing properties. Moreover, the long-term stability can be ascribed by the heterostructured combination of ZNTs and graphene via a spillover effect. The salient features of this self-assembled nanostructure are its reliability, simple synthesis method, and long-term stability, which makes it a promising candidate for new generation hydrogen sensors and hydrogen storage materials.

Structural modification of nanocrystalline diamond films via positive/negative bias enhanced nucleation and growth processes for improving their electron field emission properties

Electron field emission (EFE) properties of nanocrystalline diamond (NCD) films synthesized by the bias-enhanced growth (beg) process under different bias voltages were investigated. The induction of the nanographitic phases is presumed to be the prime factor in enhancing the EFE properties of negative biased NCD films. Transmission electron microscopic investigations reveal that a negative bias voltage of −300 V increases the rate of growth for NCD films with the size of the grains changing from nano to ultranano size. This effect also is accompanied by the induction of nanographitic filaments in the grain boundaries of the films. The turn-on field (E0) for the EFE process then effectively gets reduced. The EFE process of the beg-NCD−300V films can be turned on at E0 = 3.86 V/μm, and the EFE current density achieved is 1.49 mA/cm2 at an applied field of 7.85 V/μm. On the other hand, though a positive-bias beg process (+200 V) results in the reduction of grain size, it does not induce sufficient nanograph...

Fast growth of ultrananocrystalline diamond films by bias-enhanced nucleation and growth process in CH4/Ar plasma

This letter describes the fast growth of ultrananocrystalline diamond (UNCD) films by bias-enhanced nucleation and growth process in CH4/Ar plasma. The UNCD grains were formed at the beginning of the films growth without the necessity of forming the amorphous carbon interlayer, reaching a thickness of ∼380 nm in 10 min. Transmission electron microscopic investigations revealed that the application of bias voltage induced the formation of graphitic phase both in the interior and at the interface regions of UNCD films that formed interconnected paths, facilitating the transport of electrons and resulting in enhanced electron field emission properties.

Multifunctional sustainable materials: the role of carbon existing protein in the enhanced gas and UV sensing performances of ZnO-based biofilms

Due to environmental problems such as global warming and ozone depletion, it is essential to detect harmful UV rays from sunlight and to commercialize a clean energy source (H2), and both issues require a reliable sensor. With these considerations, herein, multifunctional ZnO-based biofilms with innovative designs (needle-fibre and jute-fibre like) are prepared by a simple hydrothermal route with sericin protein (SP) for different growing times, and fabricated as sensors. The present combination of ZnO/SP forms carbon and nitrogen enriched ZnO-based biofilms, which exhibit superior H2 and UV sensing characteristics. Among them, a sample grown for 5 h (with a jute-fibre like architecture) shows excellent H2 sensing and remarkable UV detection performance. Thus, the novel architecture based H2 sensor exhibits an ultra-fast response of 31.24% at 100 ppm within 11 s to reach a stable-state and easily recovers within 7 s, while the UV sensor shows an ultra-high photo-responsivity of 650 A W−1 with a response time of 16 s and a recovery time of 12 s, especially at room temperature. In particular, the as-fabricated sensor also produces good sensitivity/responsivity, high reversibility and long-term stability. This striking enhancement in sensing performance is attributed to the adsorptive coating of SP among ZnO lattice planes, which also affects the adsorption of chemisorbed ions from the surface of biofilms when exposed to H2 and UV atmosphere. Moreover, the present ZnO–SP based sensor overcomes the current problems of state-of-the-art room temperature ZnO based H2 and UV sensors with a cost-effective, eco-friendly and simple synthesis with easy fabrication. Furthermore, the salient feature of tailoring this bio-waste SP into versatile ZnO is the development of a low cost semiconductor nanocomposite biomaterial for multi-functional applications.