Adithya Prakash

Study of copper diffusion in RF magnetron sputtered boron carbon nitride thin films

Secondary-ion-mass spectrometry (SIMS) analysis was conducted to study the copper (Cu) diffusion into boron carbon nitride (BCN) thin films. BCN, being a dense low-k material, has a potential to be the interlayer dielectric in ultralarge scale integration processes. Hence, the diffusion of Cu into the BCN films is a major reliability factor considered in this study. SIMS analysis performed on the BCN films at different annealing temperatures confirmed very low degree of copper diffusion. Copper diffusion increased with an increase in boron concentration of the BCN film.

Electrical properties of Barium Strontium Titanate thin films for embedded capacitor applications

This work focuses on the effect of deposition temperature and post deposition annealing (PDA) in different gas ambient on the electrical properties of R.F. sputter deposited ferroelectric Barium Strontium Titanate (Ba0.5Sr0.5TiO3) thin film capacitors. Approximately 2000Å of Barium Strontium Titanate (BST) thin film was deposited at different substrate temperatures (400, 450, 500 and 550°C) on cleaned silicon substrates. These BST films were then annealed separately in 100% N2, 100% O2 and 10% O2 + 90% N2 at 575°C in the same sputtering system (PVD anneal) as well as in a tube furnace.