Adrian Hemmi

Switching stiction and adhesion of a liquid on a solid

When a gecko moves on a ceiling it makes use of adhesion and stiction. Stiction—static friction—is experienced on microscopic and macroscopic scales and is related to adhesion and sliding friction. Although important for most locomotive processes, the concepts of adhesion, stiction and sliding friction are often only empirically correlated. A more detailed understanding of these concepts will, for example, help to improve the design of increasingly smaller devices such as micro- and nanoelectromechanical switches. Here we show how stiction and adhesion are related for a liquid drop on a hexagonal boron nitride monolayer on rhodium, by measuring dynamic contact angles in two distinct states of the solid–liquid interface: a corrugated state in the absence of hydrogen intercalation and an intercalation-induced flat state. Stiction and adhesion can be reversibly switched by applying different electrochemical potentials to the sample, causing atomic hydrogen to be intercalated or not. We ascribe the change in adhesion to a change in lateral electric field of in-plane two-nanometre dipole rings, because it cannot be explained by the change in surface roughness known from the Wenzel model. Although the change in adhesion can be calculated for the system we study, it is not yet possible to determine the stiction at such a solid–liquid interface using ab initio methods. The inorganic hybrid of hexagonal boron nitride and rhodium is very stable and represents a new class of switchable surfaces with the potential for application in the study of adhesion, friction and lubrication.

High quality single atomic layer deposition of hexagonal boron nitride on single crystalline Rh(111) four-inch wafers

The setup of an apparatus for chemical vapor deposition (CVD) of hexagonal boron nitride (h-BN) and its characterization on four-inch wafers in ultra high vacuum (UHV) environment is reported. It provides well-controlled preparation conditions, such as oxygen and argon plasma assisted cleaning and high temperature annealing. In situ characterization of a wafer is accomplished with target current spectroscopy. A piezo motor driven x-y stage allows measurements with a step size of 1 nm on the complete wafer. To benchmark the system performance, we investigated the growth of single layer h-BN on epitaxial Rh(111) thin films. A thorough analysis of the wafer was performed after cutting in atmosphere by low energy electron diffraction, scanning tunneling microscopy, and ultraviolet and X-ray photoelectron spectroscopies. The apparatus is located in a clean room environment and delivers high quality single layers of h-BN and thus grants access to large area UHV processed surfaces, which had been hitherto restricted to expensive, small area single crystal substrates. The facility is versatile enough for customization to other UHV-CVD processes, e.g., graphene on four-inch wafers.

Note: An ion source for alkali metal implantation beneath graphene and hexagonal boron nitride monolayers on transition metals

The construction of an alkali-metal ion source is presented. It allows the acceleration of rubidium ions to an energy that enables the penetration through monolayers of graphene and hexagonal boron nitride. Rb atoms are sublimated from an alkali-metal dispenser. The ionization is obtained by surface ionization and desorption from a hot high work function surface. The ion current is easily controlled by the temperature of ionizer. Scanning Tunneling Microscopy measurements confirm ion implantation.

Centimeter-Sized Single-Orientation Monolayer Hexagonal Boron Nitride With or Without Nanovoids

Large-area hexagonal boron nitride (h-BN) promises many new applications of two-dimensional materials, such as the protective packing of reactive surfaces or as membranes in liquids. However, scalable production beyond exfoliation from bulk single crystals remained a major challenge. Single-orientation monolayer h-BN nanomesh is grown on 4 in. wafer single crystalline rhodium films and transferred on arbitrary substrates such as SiO2, germanium, or transmission electron microscopy grids. The transfer process involves application of tetraoctylammonium bromide before electrochemical hydrogen delamination. The material performance is demonstrated with two applications. First, protective sealing of h-BN is shown by preserving germanium from oxidation in air at high temperatures. Second, the membrane functionality of the single h-BN layer is demonstrated in aqueous solutions. Here, we employ a growth substrate intrinsic preparation scheme to create regular 2 nm holes that serve as ion channels in liquids.

Remote doping of graphene on SiO2 with 5 keV x-rays in air

The transport properties of graphene change strongly in the presence of electric fields due to graphenes band structure. This makes graphene sensitive to charges in an insulator substrate. Graphene on SiO2/Si is studied under x-ray irradiation in ambient conditions. Using the metal oxide semiconductor structure of their samples, the authors observe remote doping due to the creation of positive charges in the oxide by the irradiation and relate them to resistance and Hall effect measurements performed on the graphene gate. The observed changes in conductivity, Hall charge carrier density, and the corresponding charge carrier mobility are consistent with expectations as well as recent experiments using graphene field effect transistors under ultrahigh vacuum conditions [P. Prochazka et al. Sci. Rep. 7, 563 (2017)]. Furthermore, the stability of the effect under ambient conditions and its recovery using thermal annealing is demonstrated.