Agoston

100 GHz through-line sampler system with sampling rates in excess of 10 Gsamples/second

A through-line electrical sampler with 100 GHz of bandwidth and sampling rates in excess of 10 Gsamples/s has been fabricated and characterized. The sampling aperture is estimated to be approximately 3 ps. The linear dynamic range is >2 Vpp. The performance of this sampling component enables significant advancements in high-speed test and measurement equipment and mm-wave Ultra-wideband (UWB) receivers.

A 45 GHz AlGaAs/GaAs HBT IC technology

A non-self-aligned HBT (heterojunction bipolar transistor) IC process with f/sub T/ and f/sub max/ of 45 GHz is reported. The process provides 1.4 THz Schottky diodes, nichrome resistors, MIM capacitors, and air-bridge inductors. The process does not use any ion implantation. An HBT prescalar circuit designed with this process clocks at 13.5 GHz. A pulser circuit using Schottky diodes demonstrates 8.6 ps risetime.<<ETX>>

A 45GHz AlGaAs/GaAs HBT IC Technology without Ion-Implantation

A 45GHz HBT IC technology with 1.4THz Schottky diodes is described. The process is mesa isolated and implant-free. The process integrates NiCr resistors, MIM capacitors and air-bridge inductors. A divide-by-eight prescaler shows good performance up to 13.5GHz. A pulser circuit using the Schottky diodes produced a voltage pulse with 10.35ps rise time.

High-performance AlGaAs/GaAs HBT IC technology

A high-performance AlGaAs/GaAs HBTIC technology capable of 45 GHz fT and fmax is described. The process is mesa isolated and does not use any ion-implantation steps. This simple non-self-aligned process integrates 1.4 THz Schottky diodes, nichrome resistors, MIM capacitors and air-bridge inductors. An HBT divide-by-eight prescaler circuit clocks at 13.5 GHz. A pulser circuit using the fast Schottky diodes produced a voltage pulse having 10.35 ps rise time.