Ahmad Al Hajjar

Low frequency noise of InGaP/GaAs HBT at high injection: A comprehensive analysis of base-collector, base-emitter junctions and base layer TLM

Low frequency (LF) noise and especially trap assisted GR noise in semiconductor devices does not affect only the performances of radio frequency (RF) and microwave transmitters (oscillators) but also that of receivers (local oscillators, mixers). Measurement and simulation characterization tools of semiconductor devices become crucial in order to optimize their characteristics and circuit performances. In this paper, firstly we propose a low noise, wideband LF noise setup which allows to measure noise sources up to 10 MHz. Secondly, by using TCAD simulation tools of semiconductor devices, the origin of LF noise sources in InGaP/GaAs HBT is investigated. Many comparisons between numerical physics-based device noise simulation and LF noise measurement of base TLM, varactor base-collector junction and base-emitter heterojunction allow us to locate precisely the origin of LF noise of InGaP/GaAs HBT.

Comprehensive analysis of traps in InGaP/GaAs HBT by GR noise

In this paper, we will present a comprehensive analysis of low frequency noise in InGaP/GaAs HBT transistor, which is developed in two main axes: first, we report a study of the low frequency noise characteristics of InGaP/GaAs HBT. Our measurements were performed over the frequency range from 100 Hz to 10 MHz, under different biasing conditions and over the temperature range from 300°K to 375°K at low as well as high injection levels. Low frequency (LF) generation recombination (GR) noise measurements revealed an electron trap with activation energy of 0.536 eV. Secondly, from a rigorous physics-based noise simulation using the Langevin approach within the framework of Greens function, traps detected by temperature-dependent experimental observation are located at the heterointerface δ-InGaP/GaAs, responsible for the GR noise sources. Comparisons between LF noise measurement and numerical physics-based device noise simulation of base TLM, base-collector junction and base-emitter heterojunction allow us to locate precisely the origin of LF noise of InGaP/GaAs HBT.

Low-Frequency Drain Noise Characterization and TCAD Physical Simulations of GaN HEMTs: Identification and Analysis of Physical Location of Traps

In this letter, an investigation of the low-frequency (LF) drain noise characteristics of the GaN/ AlGaN/GaN HEMT grown on a SiC substrate has been performed. LF drain noise measurements are performed over the frequency range of 20 Hz–1 MHz by varying chuck temperatures (

A comparison of 2-D simulations and measurements of low frequency noise on InGaP/GaAs HBT transistors at low and high level injection

{T}_{\mathbf {\sf chuck}})

Identification of GaN Buffer Traps in Microwave Power AlGaN/GaN HEMTs Through Low Frequency S-Parameters Measurements and TCAD-Based Physical Device Simulations

between 25°C and 100°C. Furthermore, we present the 2-D TCAD physical simulation analysis of this device. TCAD simulation model has been calibrated using the measured device characteristics, and then, using the calibrated model, LF drain noise simulations have been performed. A good match is observed between drain noise measurements and simulation results, and this physically confirms that two acceptor-like traps with apparent activation energies of 0.51 and 0.57 eV, respectively, below the conduction band are located in the GaN buffer.

Low-Frequency Noise Characterization in GaN HEMTs: Investigation of Deep Levels and Their Physical Properties

We propose a robust solution to accurately simulate the trap assisted GR noise in real-life semiconductor devices at low as well as high injection levels. The powerful postprocessing tool developed on the mathematical SCILAB software package is the Langevin method associated to Greens functions responses of the device. It allows performing accurately noise simulations of semiconductor devices. Our numerical simulator of trapping noise in semiconductor devices is coupled with the output data of one of the simulator available in the public domain, namely Sentaurus fron Synopsys. Commercially available simulator present considerable advantages in performing accurate DC, AC and transient simulations of semiconductor devices, including many fundamental and parasitic effects which are not generally taken into account in house-made simulators.