Aila Sitomaniemi

Effect of Phosphor Encapsulant on the Thermal Resistance of a High-Power COB LED Module

With their many advantages, such as small size, energy efficiency, and long lifetime, light emitting diodes (LEDs) are conquering the lighting world. Blue LEDs, because of their high efficiency, are commonly used and a phosphor is used to convert blue light into white light. The remote phosphor concept has gained attention since it promises to deliver better efficacy than solutions in which the phosphor is applied directly on the LEDs. In this paper, the effect of phosphor packaging on the thermal performance of a high-power chip-on-board LED module is studied. Both simulations and measurements show that, despite the added thermal load caused by white light conversion losses in the phosphor, the average temperature of the phosphor-coated LEDs matches with that of noncoated LEDs. The phosphor encapsulant generates a parallel heat conduction path which reduces the thermal resistance from the LED chips to ambient and compensates the thermal power increase.

Thermal Performance Comparison of Thick-Film Insulated Aluminum Substrates With Metal Core PCBs for High-Power LED Modules

Evolution of lumens per watt efficacy has enabled exponential growth in light-emitting diode (LED) lighting applications. However, heat management is a major challenge for an LED module design due to the necessity to conduct heat away from the LED chip. Elevated chip temperatures cause adverse effects on LED performance, lifetime, and color. This paper compares the thermal performance of high-power LED modules made with two types of circuit boards: novel substrates based on insulated aluminum material systems (IAMSs) technology that inherently allows using thermal vias under the LEDs and traditional metal core printed circuit boards (MCPCBs) commonly used with high-power LED applications. IAMS is a thick-film insulation system developed for aluminum that cannot handle temperature higher than 660 °C. The coefficient of thermal expansion of IAMS pastes is designed to match with aluminum, which minimizes any bowing. The thermal via underneath the LED enables excellent thermal performance. More than 7°C reduction in LED junction temperature at 700-mA drive current and 27% reduction in the total thermal resistance from the LED junction to the bottom of the substrate were demonstrated for the IAMS technology when compared with MCPCB. When considering only the thermal resistance of the substrate, reductions of around 70% and 50% were obtained. This versatile and low-cost material system has the potential to make LEDs even more attractive in lighting applications.

Copper-Core MCPCB With Thermal Vias for High-Power COB LED Modules

To improve thermal performance of high-power chip-on-board multichip LED module, a copper-core metal core printed circuit board (MCPCB) substrate with copper filled microvias is introduced. As a reference, the performance is compared with alumina module with the same layout by means of thermal simulations and measurements. Up to 55% reduction in the thermal resistance from the LED source to the bottom of the substrate is demonstrated. The excellent performance of the Cu MCPCB module is due to copper-filled microvias under the blue LED chips that occupy the majority of the multichip module. The conclusion was verified by measuring increased thermal resistances of red chips without thermal vias on the Cu MCPCB module. However, as the blue LEDs dominate the thermal power of the module, they also dominate the module thermal resistance. The thermal resistance was demonstrated to correspond with the number of vias as lower thermal resistance was measured on modules with larger number of vias. The Cu MCPCB was processed in standard PCB manufacturing and low cost material, FR4, was utilized for the electrical insulation. Thus, the solution is potentially cost-effective despite the higher cost of copper in comparison with aluminum that is the most commonly used MCPCB core material.

Optical transceivers for interconnections in satellite payloads

The increasing data rates and processing on board satellites call for the use of photonic interconnects providing high-bitrate performance as well as valuable savings in mass and volume. Therefore, optical transmitter and receiver technology is developed for aerospace applications. The metal-ceramic-packaging with hermetic fiber pigtails enables robustness for the harsh spacecraft environment, while the 850-nm VCSEL-based transceiver technology meets the high bit-rate and low power requirements. The developed components include 6 Gbps SpaceFibre duplex transceivers for intra-satellite data links and 40 Gbps parallel optical transceivers for board-to-board interconnects. Also, integration concept of interchip optical interconnects for onboard processor ICs is presented.

Optical interconnects based on VCSELs and low-loss silicon photonics

Silicon photonics with micron-scale Si waveguides offers most of the benefits of submicron SOI technology while avoiding most of its limitations. In particular, thick silicon-on-insulator (SOI) waveguides offer 0.1 dB/cm propagation loss, polarization independency, broadband single-mode (SM) operation from 1.2 to >4 µm wavelength and ability to transmit high optical powers (>1 W). Here we describe the feasibility of Thick-SOI technology for advanced optical interconnects. With 12 μm SOI waveguides we demonstrate efficient coupling between standard single-mode fibers, vertical-cavity surface-emitting lasers (VCSELs) and photodetectors (PDs), as well as wavelength multiplexing in small footprint. Discrete VCSELs and PDs already support 28 Gb/s on-off keying (OOK), which shows a path towards 50-100 Gb/s bandwidth per wavelength by using more advanced modulation formats like PAM4. Directly modulated VCSELs enable very power-efficient optical interconnects for up to 40 km distance. Furthermore, with 3 μm SOI waveguides we demonstrate extremely dense and low-loss integration of numerous optical functions, such as multiplexers, filters, switches and delay lines. Also polarization independent and athermal operation is demonstrated. The latter is achieved by using short polymer waveguides to compensate for the thermo-optic effect in silicon. New concepts for isolator integration and polarization rotation are also explained.

High-speed ADC and DAC modules with fibre optic interconnections for telecom satellites

The flexibility required for future telecom payloads calls for the introduction of more and more digital processing capabilities. Aggregate data throughputs of several Tbps will have to be handled onboard, thus creating the need for effective, ADCDSP and DACDSP highspeed links. ADC and DAC modules with optical interconnections is an attractive option as it can solve easily the transmission and routing of the expected huge amount of data. This technique will enable to increase the bandwidth and/or the number of beams/channels to be treated, or to support advanced digital processing architectures including beam forming. We realised electrooptic ADC and DAC modules containing an 8 bit, 2 GSa/s A/D converter and a 12 bit, 2 GSa/s D/A converter. The 4channel parallel fibre optic link employs 850nm VCSELs and GaAs PIN photodiodes coupled to 50/125μm fibre ribbon cable. ADCDSP and DSPDAC links both have an aggregate data rate of 25 Gbps. The paper presents the current status of this development.