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Dive into the research topics where Aitian Chen is active.

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Featured researches published by Aitian Chen.


Advanced Materials | 2014

Electric Field Manipulation of Magnetization Rotation and Tunneling Magnetoresistance of Magnetic Tunnel Junctions at Room Temperature

Peisen Li; Aitian Chen; Dalai Li; Yonggang Zhao; Sen Zhang; Lifeng Yang; Yan Liu; M.H. Zhu; Huiyun Zhang; Xiufeng Han

Electric-field-controlled tunneling magnetoresistance (TMR) of magnetic tunnel junctions is considered as the milestone of ultralow power spintronic devices. Here, reversible, continuous magnetization rotation and manipulation is reported for TMR at room temperature in CoFeB/AlOx/CoFeB/piezoelectric structure by electric fields without the assistance of a magnetic field through strain-mediated interaction. These results provide a new way of exploring electric-field-controlled spintronics.


Scientific Reports | 2015

Bipolar loop-like non-volatile strain in the (001)-oriented Pb(Mg1/3Nb2/3)O3-PbTiO3 single crystals.

Lifeng Yang; Yonggang Zhao; Sen Zhang; Peisen Li; Ya Gao; Yuanjun Yang; Haoliang Huang; Peixian Miao; Yan Liu; Aitian Chen; Ce-Wen Nan; Chen Gao

Strain has been widely used to manipulate the properties of various kinds of materials, such as ferroelectrics, semiconductors, superconductors, magnetic materials, and “strain engineering” has become a very active field. For strain-based information storage, the non-volatile strain is very useful and highly desired. However, in most cases, the strain induced by converse piezoelectric effect is volatile. In this work, we report a non-volatile strain in the (001)-oriented Pb(Mg1/3Nb2/3)O3-PbTiO3 single crystals and demonstrate an approach to measure the non-volatile strain. A bipolar loop-like S-E curve is revealed and a mechanism involving 109° ferroelastic domain switching is proposed. The non-volatile high and low strain states should be significant for applications in information storage.


Advanced Materials | 2016

Angular Dependence of Exchange Bias and Magnetization Reversal Controlled by Electric‐Field‐Induced Competing Anisotropies

Aitian Chen; Yonggang Zhao; Peisen Li; Xu Zhang; Ren-Ci Peng; Haoliang Huang; Lvkuan Zou; Xiaoli Zheng; Sen Zhang; Peixian Miao; Yalin Lu; Jianwang Cai; Ce-Wen Nan

The combination of exchange-biased systems and ferroelectric materials offers a simple and effective way to investigate the angular dependence of exchange bias using one sample with electric-field-induced competing anisotropies. A reversible electric-field-controlled magnetization reversal at zero magnetic field is also realized through optimizing the anisotropy configuration, holding promising applications for ultralow power magnetoelectric devices.


ACS Applied Materials & Interfaces | 2016

Electric-Field Control of Magnetism in Co40Fe40B20/(1-x)Pb(Mg1/3Nb2/3)O3-xPbTiO3 Multiferroic Heterostructures with Different Ferroelectric Phases

Yan Liu; Yonggang Zhao; Peisen Li; Sen Zhang; Dalai Li; Hao Wu; Aitian Chen; Yang Xu; Xiufeng Han; Shiyan Li; Di Lin; Haosu Luo

Electric-field control of magnetism in multiferroic heterostructures composed of Co40Fe40B20 (CoFeB) and (1-x)Pb(Mg1/3Nb2/3)O3-xPbTiO3 (PMN-xPT) with different ferroelectric phases via changing composition and temperature is explored. It is demonstrated that the nonvolatile looplike bipolar-electric-field-controlled magnetization, previously found in the CoFeB/PMN-xPT heterostructures with PMN-xPT in the rhombohedral (R) phase around the morphotropic phase boundary (MPB), also occurs for PMN-xPTs with both R phase (far away from MPB) and monoclinic (M) phase, suggesting that the phenomenon is the common feature of CoFeB/PMN-xPT multiferroic heterostructures for PMN-xPT with different phases. The magnitude of the effect changes with increasing temperature and volatile bipolar-electric-field-controlled magnetization with a butterflylike behavior occurs when the ferroelectric phase changes to the tetragonal phase (T). Moreover, for the R-phase sample with x = 0.18, an abrupt and giant increase of magnetization is observed at a characteristic temperature in the temperature dependence of magnetization curve. These results are discussed in terms of coupling between magnetism and ferroelectric domains including macro- and microdomains for different ferroelectric phases. This work is helpful for understanding the phenomena of electric-field control of magnetism in FM/FE multiferroic heterostructures and is also important for applications.


ACS Applied Materials & Interfaces | 2017

Electric-Field Modulation of Interface Magnetic Anisotropy and Spin Reorientation Transition in (Co/Pt)3/PMN–PT Heterostructure

Ying Sun; You Ba; Aitian Chen; Wei He; Wenbo Wang; Xiaoli Zheng; Lvkuan Zou; Yijun Zhang; Qu Yang; Lingjia Yan; Ce Feng; Qinghua Zhang; Jianwang Cai; Weida Wu; Ming Liu; Lin Gu; Zhaohua Cheng; Ce-Wen Nan; Z. Q. Qiu; Y. Z. Wu; Jia Li; Yonggang Zhao

We report electric-field control of magnetism of (Co/Pt)3 multilayers involving perpendicular magnetic anisotropy with different Co-layer thicknesses grown on Pb(Mg,Nb)O3-PbTiO3 (PMN-PT) FE substrates. For the first time, electric-field control of the interface magnetic anisotropy, which results in the spin reorientation transition, was demonstrated. The electric-field-induced changes of the bulk and interface magnetic anisotropies can be understood by considering the strain-induced change of magnetoelastic energy and weakening of Pt 5d-Co 3d hybridization, respectively. We also demonstrate the role of competition between the applied magnetic field and the electric field in determining the magnetization of the sample with the coexistence phase. Our results demonstrate electric-field control of magnetism by harnessing the strain-mediated coupling in multiferroic heterostructures with perpendicular magnetic anisotropy and are helpful for electric-field modulations of Dzyaloshinskii-Moriya interaction and Rashba effect at interfaces to engineer new functionalities.


ACS Applied Materials & Interfaces | 2017

Spatially Resolved Ferroelectric Domain-Switching-Controlled Magnetism in Co40Fe40B20/Pb(Mg1/3Nb2/3)0.7Ti0.3O3 Multiferroic Heterostructure

Peisen Li; Yonggang Zhao; Sen Zhang; Aitian Chen; Dalai Li; Jing Ma; Yan Liu; Daniel T. Pierce; John Unguris; Hong-Guang Piao; Huiyun Zhang; M.H. Zhu; Xiaozhong Zhang; Xiufeng Han; Mengchun Pan; Ce-Wen Nan

Intrinsic spatial inhomogeneity or phase separation in cuprates, manganites, etc., related to electronic and/or magnetic properties, has attracted much attention due to its significance in fundamental physics and applications. Here we use scanning Kerr microscopy and scanning electron microscopy with polarization analysis with in situ electric fields to reveal the existence of intrinsic spatial inhomogeneity of the magnetic response to an electric field on a mesoscale with the coexistence of looplike (nonvolatile) and butterfly-like (volatile) behaviors in Co40Fe40B20/Pb(Mg1/3Nb2/3)0.7Ti0.3O3 ferromagnetic/ferroelectric (FM/FE) multiferroic heterostructures. Both the experimental results and micromagnetic simulations suggest that these two behaviors come from the 109° and the 71°/180° FE domain switching, respectively, which have a spatial distribution. This FE domain-switching-controlled magnetism is significant for understanding the nature of FM/FE coupling on the mesoscale and provides a path for designing magnetoelectric devices through domain engineering.


Scientific Reports | 2016

Ferroelectricity and Self-Polarization in Ultrathin Relaxor Ferroelectric Films.

Peixian Miao; Yonggang Zhao; Nengneng Luo; Diyang Zhao; Aitian Chen; Zhong Sun; Meiqi Guo; M.H. Zhu; Huiyun Zhang; Qiang Li

We report ferroelectricity and self-polarization in the (001) oriented ultrathin relaxor ferroelectric PMN-PT films grown on Nb-SrTiO3, SrRuO3 and La0.7Sr0.3MnO3, respectively. Resistance-voltage measurements and AC impedance analysis suggest that at high temperatures Schottky depletion width in a 4 nm thick PMN-PT film deposited on Nb-SrTiO3 is smaller than the film thickness. We propose that Schottky interfacial dipoles make the dipoles of the nanometer-sized polar nanoregions (PNRs) in PMN-PT films grown on Nb-SrTiO3 point downward at high temperatures and lead to the self-polarization at room temperature with the assistance of in-plane compressive strain. This work sheds light on the understanding of epitaxial strain effects on relaxor ferroelectric films and self-polarization mechanism.


ACS Applied Materials & Interfaces | 2017

Strain-Mediated Coexistence of Volatile and Nonvolatile Converse Magnetoelectric Effects in Fe/Pb(Mg1/3Nb2/3)0.7Ti0.3O3 Heterostructure

Sen Zhang; Qianping Chen; Yan Liu; Aitian Chen; Lifeng Yang; Peisen Li; Zhou Shi Ming; Yi Yu; Wen Sun; Xiaozhong Zhang; Yuelei Zhao; Young Sun; Yonggang Zhao

Strain-mediated ferromagnetic/ferroelectric (FE) heterostructures have played an important role in multiferroic materials to investigate the electric-field control of magnetism in the past decade, due to their excellent performances, such as room-temperature operation and large magnetoelectric (ME) coupling effect. Because of the different FE-switching-originated strain behaviors and varied interfacial coupling effect, both loop-like (nonvolatile) and butterfly-like (volatile) converse ME effects have been reported. Here, we investigate the electric-field control of magnetism in a multiferroic heterostructure composed of a polycrystalline Fe thin film and a Pb(Mg1/3Nb2/3)0.7Ti0.3O3 single crystal, and the experimental results exhibit complex behaviors, suggesting the coexistence of volatile and nonvolatile converse ME effects. By separating the symmetrical and antisymmetrical parts of the electrical modulation of magnetization, we distinguished the loop-like hysteresis and butterfly-like magnetization changes tuned by electric fields, corresponding to the strain effects related to the FE 109° switching and 71/180° switching, respectively. Further magnetic-field-dependent as well as angular-dependent investigation of the converse ME effect confirmed the strain-mediated magnetism involving competition among the Zeeman energy, magnetocrystalline anisotropy energy, and strain-generated magnetoelastic energy. This study is helpful for understanding the electric-field control of magnetism in multiferroic heterostructures as well as its relevant applications.


ACS Applied Materials & Interfaces | 2017

Magnetoresistance Behavior of Conducting Filaments in Resistive-Switching NiO with Different Resistance States

Diyang Zhao; Shuang Qiao; Yuxiang Luo; Aitian Chen; Pengfei Zhang; Ping Zheng; Zhong Sun; Minghua Guo; Fu-kuo Chiang; Jian Wu; Jianlin Luo; Jianqi Li; Satoshi Kokado; Yayu Wang; Yonggang Zhao

The resistive switching (RS) effect in various materials has attracted much attention due to its interesting physics and potential for applications. NiO is an important system and its RS effect has been generally explained by the formation/rupture of Ni-related conducting filaments. These filaments are unique since they are formed by an electroforming process, so it is interesting to explore their magnetoresistance (MR) behavior, which can also shed light on unsolved issues such as the nature of the filaments and their evolution in the RS process, and this behavior is also important for multifunctional devices. Here, we focus on MR behavior in NiO RS films with different resistance states. Rich and interesting MR behaviors have been observed, including the normal and anomalous anisotropic magnetoresistance and tunneling magnetoresistance, which provide new insights into the nature of the filaments and their evolution in the RS process. First-principles calculation reveals the essential role of oxygen migration into the filaments during the RESET process and can account for the experimental results. Our work provides a new avenue for exploration of the conducting filaments in resistive switching materials and is significant for understanding the mechanism of RS effect and multifunctional devices.


Advanced Materials | 2016

Ferroelectric Materials: Angular Dependence of Exchange Bias and Magnetization Reversal Controlled by Electric‐Field‐Induced Competing Anisotropies (Adv. Mater. 2/2016)

Aitian Chen; Yonggang Zhao; Peisen Li; Xu Zhang; Ren-Ci Peng; Haoliang Huang; Lvkuan Zou; Xiaoli Zheng; Sen Zhang; Peixian Miao; Yalin Lu; Jianwang Cai; Ce-Wen Nan

Y. Zhao and co-workers demonstrate a simple and effective method to investigate the angular dependence of exchange bias using one sample with different ratios and relative orientations of the anisotropies via the combination of exchange-biased systems and ferroelectric materials. As they describe on page 363, electric-field-controlled magnetization reversal without a bias magnetic field is also realized at room temperature in this system through electric-field-induced competing anisotropies.

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Sen Zhang

National University of Defense Technology

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Xiufeng Han

Chinese Academy of Sciences

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Dalai Li

Chinese Academy of Sciences

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Jianwang Cai

Chinese Academy of Sciences

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Lvkuan Zou

Chinese Academy of Sciences

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