Aiting Jiang

Broadly tunable terahertz generation in mid-infrared quantum cascade lasers

Room temperature, broadly tunable, electrically pumped semiconductor sources in the terahertz spectral range, similar in operation simplicity to diode lasers, are highly desired for applications. An emerging technology in this area are sources based on intracavity difference-frequency generation in dual-wavelength mid-infrared quantum cascade lasers. Here we report terahertz quantum cascade laser sources based on an optimized non-collinear Cherenkov difference-frequency generation scheme that demonstrates dramatic improvements in performance. Devices emitting at 4 THz display a mid-infrared-to-terahertz conversion efficiency in excess of 0.6 mW W(-2) and provide nearly 0.12 mW of peak power output. Devices emitting at 2 and 3 THz fabricated on the same chip display 0.09 and 0.4 mW W(-2) conversion efficiencies at room temperature, respectively. High terahertz-generation efficiency and relaxed phase-matching conditions offered by the Cherenkov scheme allowed us to demonstrate, for the first time, an external-cavity terahertz quantum cascade laser source tunable between 1.70 and 5.25 THz.

Broadly tunable monolithic room-temperature terahertz quantum cascade laser sources

Electrically pumped room-temperature semiconductor sources of tunable terahertz radiation in 1-5 THz spectral range are highly desired to enable compact instrumentation for THz sensing and spectroscopy. Quantum cascade lasers with intra-cavity difference-frequency generation are currently the only room-temperature electrically pumped semiconductor sources that can operate in the entire 1-5 THz spectral range. Here we demonstrate that this technology is suitable to implementing monolithic room-temperature terahertz tuners with broadband electrical control of the emission frequency. Experimentally, we demonstrate ridge waveguide devices electrically tunable between 3.44 and 4.02 THz.

Atomic layer deposition of crystalline SrHfO3 directly on Ge (001) for high-k dielectric applications

The current work explores the crystalline perovskite oxide, strontium hafnate, as a potential high-k gate dielectric for Ge-based transistors. SrHfO3 (SHO) is grown directly on Ge by atomic layer deposition and becomes crystalline with epitaxial registry after post-deposition vacuum annealing at ∼700 °C for 5 min. The 2 × 1 reconstructed, clean Ge (001) surface is a necessary template to achieve crystalline films upon annealing. The SHO films exhibit excellent crystallinity, as shown by x-ray diffraction and transmission electron microscopy. The SHO films have favorable electronic properties for consideration as a high-k gate dielectric on Ge, with satisfactory band offsets (>2 eV), low leakage current (<10−5 A/cm2 at an applied field of 1 MV/cm) at an equivalent oxide thickness of 1 nm, and a reasonable dielectric constant (k ∼ 18). The interface trap density (Dit) is estimated to be as low as ∼2 × 1012 cm−2 eV−1 under the current growth and anneal conditions. Some interfacial reaction is observed betwee...

Spectroscopic Study of Terahertz Generation in Mid-Infrared Quantum Cascade Lasers

Terahertz quantum cascade laser sources based on intra-cavity difference-frequency generation are currently the only room-temperature mass-producible diode-laser-like emitters of coherent 1–6 THz radiation. Device performance has improved dramatically over the past few years to reach milliwatt-level power output and broad tuning from 1.2 to 5.9 THz, all at room-temperature. Terahertz output in these sources originates from intersubband optical nonlinearity in the laser active region. Here we report the first comprehensive spectroscopic study of the optical nonlinearity and investigate its dependence on the mid-infrared pump frequencies. Our work shows that the terahertz generation efficiency can vary by a factor of 2 or greater depending on the spectral position of the mid-infrared pumps for a fixed THz difference-frequency. We have also measured for the first time the linewidth for transitions between the lower quantum cascade laser states, which is critical for determining terahertz nonlinearity and predicting optical loss in quantum cascade laser waveguides.

THz Difference-Frequency Generation in MOVPE-Grown Quantum Cascade Lasers

We report mass-producible room-temperature electrically-pumped THz sources based on intra-cavity difference-frequency generation in mid-infrared InGaAs/AlInAs/InP quantum cascade lasers. Devices are grown by a commercial foundry using metal organic vapor phase epitaxy. A dual-stack active region possessing giant optical nonlinearity for 3.5 THz generation and a non-collinear Cherenkov waveguide THz outcoupling scheme is employed. Fabry-Pérot devices provided broad emission in the 3-4 THz range with a peak power of 5 μW. Single color THz sources were processed using surface distributed feedback gratings to produce narrowband emission at 3.5 THz with nearly 40 μW of peak power and a mid-infrared-to-THz conversion efficiency of 0.36 mW/W2. To better understand the dynamics of the DFG process, time gated spectral measurements of the mid-infrared pumps were performed and simultaneous lasing over the duration of the applied bias pulse was observed, thereby resulting in efficient difference frequency generation.

Widely tunable terahertz source based on intra-cavity frequency mixing in quantum cascade laser arrays

We demonstrate a compact monolithic terahertz source continuously tunable from 1.9 THz to 3.9 THz with the maximum peak power output of 106 μW at 3.46 THz at room temperature. The source consists of an array of 10 electrically tunable quantum cascade lasers with intra-cavity terahertz difference-frequency generation. To increase fabrication yield and achieve high THz peak power output in our devices, a dual-section current pumping scheme is implemented using two electrically isolated grating sections to independently control gain for the two mid-IR pumps.

Experimental investigation of terahertz quantum cascade laser with variable barrier heights

We report an experimental study of terahertz quantum cascade lasers with variable barrier heights based on the Al xGa1–xAs/GaAs material system. Two new designs are developed based on semiclassical ensemble Monte Carlo simulations using state-of-the-art Al 0.15Ga0.85As/GaAs three-quantum-well resonant phonon depopulation active region design as a reference. The new designs achieved maximum lasing temperatures of 188 K and 172 K, as compared to the maximum lasing temperature of 191 K for the reference structure. These results demonstrate that terahertz quantum cascade laser designs with variable barrier heights provide a viable alternative to the traditional active region designs with fixed barrier composition. Additional design space offered by using variable barriers may lead to future improvements in the terahertz quantum cascade laser performance.

Recent Progress in Widely Tunable Single-Mode Room Temperature Terahertz Quantum Cascade Laser Sources

We present the operating principle, design, and performance of external-cavity (EC) and monolithic terahertz (THz) tuners based on intracavity difference-frequency generation (DFG) in midinfrared (mid-IR) quantum cascade lasers (QCLs). A DFG-QCL gain chip employed in a Littrow-type THz EC system was optimized for wide tunability in 1-6 THz range using broad mid-IR gain bandwidth active region with integrated optical nonlinearity and Cherenkov THz phase-matching scheme. The EC system demonstrated ultrabroadband single-mode tuning from 1.2 to 5.9 THz. Beam steering in THz far field due to refractive index dispersion of InP substrate has been successfully suppressed by bonding the QCL chip on a high-resistivity silicon substrate. We also discuss the design of compact widely tunable monolithic THz DFG-QCL sources. Devices use two electrically isolated grating sections for independent electronic tuning of the two mid-IR pump frequencies. THz DFG frequency tuning from 3.44 to 4.02 THz, corresponding to 580 GHz or 15% of center frequency, is obtained.

A Low-Leakage Epitaxial High-κ Gate Oxide for Germanium Metal–Oxide–Semiconductor Devices

Germanium (Ge)-based metal-oxide-semiconductor field-effect transistors are a promising candidate for high performance, low power electronics at the 7 nm technology node and beyond. However, the availability of high quality gate oxide/Ge interfaces that provide low leakage current density and equivalent oxide thickness (EOT), robust scalability, and acceptable interface state density (D(it)) has emerged as one of the most challenging hurdles in the development of such devices. Here we demonstrate and present detailed electrical characterization of a high-κ epitaxial oxide gate stack based on crystalline SrHfO3 grown on Ge (001) by atomic layer deposition. Metal-oxide-Ge capacitor structures show extremely low gate leakage, small and scalable EOT, and good and reducible D(it). Detailed growth strategies and postgrowth annealing schemes are demonstrated to reduce Dit. The physical mechanisms behind these phenomena are studied and suggest approaches for further reduction of D(it).

THz quantum cascade lasers for operation above cryogenic temperatures

High temperature operation of terahertz (THz) sources based on quantum cascade lasers (QCLs) is discussed. THz QCLs are compact, powerful sources but can only operate at cryogenic temperatures. State-of-the art THz QCLs are made with GaAs/AlGaAs heterostructures and use a single composition of AlGaAs for the barrier material. It was recently shown that multi-composition barriers in the band structure can result in gain > loss at temperature as high as ~240K. We demonstrate early experimental results that yield QCLs that operate up to 184K – similar to QCLs based on single composition barrier designs. An alternative method of producing room-temperature THz is based on intra-cavity difference-frequency generation (DFG) in mid-infrared (mid-IR) QCLs. Here we report devices with record conversion efficiency. THz DFG QCLs reported previously are highly inefficient since THz radiation produced more than ~100 μm away from the exit facet is fully absorbed due to high THz losses in the QCL waveguide. Our lasers use a non-collinear Cherenkov DFG scheme to extract THz radiation from the active region. Dual-color mid-IR quantum cascade lasers with integrated giant optical nonlinearity are grown on semi-insulating (S.I.) InP substrates. THz radiation is emitted at an angle into the substrate with respect to the mid-infrared pumps. Since S.I. InP is virtually lossless to THz radiation, this scheme allows for efficient extraction of THz radiation along the whole waveguide length. As a result, our sources demonstrate large mid-infrared-to-THz conversion efficiency. Devices tested at room-temperature produced 18μW peakpower and 75μW/W2 conversion efficiency.