Ajuan Cui

Single Grain Boundary Break Junction for Suspended Nanogap Electrodes with Gapwidth Down to 1–2 nm by Focused Ion Beam Milling

Single grain boundary junctions are used for the fabrication of suspended nanogap electrodes with a gapwidth down to 1-2 nm through the break of such junctions by focused ion beam (FIB) milling. With advantages of stability and no debris, such nanogap electrodes are suitable for single molecular electronic device construction.

Metal‐Organic Frameworks Reactivate Deceased Diatoms to be Efficient CO2 Absorbents

Diatomite combined with certain metal-organic frameworks (MOFs) is shown to be an effective CO2 absorbent, although diatomite alone is regarded as inert with respect to CO2 absorption. This finding opens the prospect of reactivating millions of tons of diatomite for CO2 absorption. It also shows for the first time that diatom frustules can act as CO2 buffers, an important link in a successive biological CO2 concentration mechanism chain that impacts on global warming.

Nanogap Electrodes towards Solid State Single‐Molecule Transistors

With the establishment of complementary metal-oxide-semiconductor (CMOS)-based integrated circuit technology, it has become more difficult to follow Moores law to further downscale the size of electronic components. Devices based on various nanostructures were constructed to continue the trend in the minimization of electronics, and molecular devices are among the most promising candidates. Compared with other candidates, molecular devices show unique superiorities, and intensive studies on molecular devices have been carried out both experimentally and theoretically at the present time. Compared to two-terminal molecular devices, three-terminal devices, namely single-molecule transistors, show unique advantages both in fundamental research and application and are considered to be an essential part of integrated circuits based on molecular devices. However, it is very difficult to construct them using the traditional microfabrication techniques directly, thus new fabrication strategies are developed. This review aims to provide an exclusive way of manufacturing solid state gated nanogap electrodes, the foundation of constructing transistors of single or a few molecules. Such single-molecule transistors have the potential to be used to build integrated circuits.

Ion-beam-induced bending of freestanding amorphous nanowires: The importance of the substrate material and charging

Ion-beam irradiation offers great flexibility and controllability in the construction of freestanding nanostructures with multiple advanced functionalities. Here, we present and discuss the bending of free-standing nanowires, against, towards, and ultimately parallel to a flux of directional ion irradiation. Bending components both along and perpendicular to the incident ion beam were observed, and the bending behavior was found to depend both on the ion beam scanning strategy and on the conductivity of the supporting substrate. This behavior is explained by an ion-irradiation-related electrostatic interaction. Our findings suggest the prospect of exploiting this technique to engineer 3D nanostructures for advanced applications.

Freestanding nanostructures for three-dimensional superconducting nanodevices

Free-space nanostructures are the fundamental building blocks of three-dimensional (3D) nanodevices with multi-functionality beyond that achievable by planar devices. Here we developed a reliable technique for the site-specific post-growth geometrical manipulation of freestanding superconducting nanowires using ion-beam irradiation with nanometer-scale resolution to fabricate uniformly shaped and sized clean-surface 3D nanostructures. Such structures could integrate with conventional superconducting quantum interference devices to detect magnetic fields both parallel and normal to the substrate. Property characterizations suggest that our focused-ion-beam technique allows tailoring of freestanding superconducting loops for size and geometry, potentially for lab-on-chip experiments.

Mass Production of Nanogap Electrodes toward Robust Resistive Random Access Memory

Nanogap electrodes arrays are fabricated by combining atomic layer deposition, adhesive tape, and chemical etching. A unipolar nonvolatile resistive-switching behavior is identified in the nanogap electrodes, showing stable, robust performance and the multibit storage ability, demonstrating great potential in ultrahigh-density storage. The formation and dissolution of Si conductive filaments and migration of Au atoms is the mechanism behind the resistive switching.

Felling of individual freestanding nanoobjects using focused-ion-beam milling for investigations of structural and transport properties

We report that, to enable studies of their compositional, structural and electrical properties, freestanding individual nanoobjects can be selectively felled in a controllable way by the technique of low-current focused-ion-beam (FIB) milling with the ion beam at a chosen angle of incidence to the nanoobject. To demonstrate the suitability of the technique, we report results for zigzag/straight tungsten nanowires grown vertically on support substrates and then felled for characterization. We also describe a systematic investigation of the effect of the experimental geometry and parameters on the felling process and on the induced wire-bending phenomenon. The method of felling freestanding nanoobjects using FIB is an advantageous new technique enabling investigations of the properties of selected individual nanoobjects.

Spatially oriented plasmonic ‘nanograter’ structures

One of the key motivations in producing 3D structures has always been the realization of metamaterials with effective constituent properties that can be tuned in all propagation directions at various frequencies. Here, we report the investigation of spatially oriented “Nanograter” structures with orientation-dependent responses over a wide spectrum by focused-ion-beam based patterning and folding of thin film nanostructures. Au nano units of different shapes, standing along specifically designated orientations, were fabricated. Experimental measurements and simulation results show that such structures offer an additional degree of freedom for adjusting optical properties with the angle of inclination, in additional to the size of the structures. The response frequency can be varied in a wide range (8 μm–14 μm) by the spatial orientation (0°–180°) of the structures, transforming the response from magnetic into electric coupling. This may open up prospects for the fabrication of 3D nanostructures as optical interconnects, focusing elements and logic elements, moving toward the realization of 3D optical circuits.

Thermal induced single grain boundary break junction for suspended nanogap electrodes

Construction of molecular devices is one of the most promising approaches for the ultimate miniaturization of electronic devices, the groundwork of which is the fabrication of nanogap electrodes. Here we report a method to fabricate nanogap electrodes through thermal annealing based on single grain boundary junction. By performing low temperature thermal process, single grain boundary junction can be broken and change into a suspended gap with gap width down to sub-5 nanometers, which is beyond the fabrication precision of traditional lithography technologies. With the advantage of shape stability, no debris and high time efficiency, such nanogap electrodes is promising in constructing molecular devices with two or three-terminals.中文摘要纳米尺度分子器件是最有可能实现超高密度集成电路的途径之一, 而纳米间隙电极对的制备是分子器件的构筑基础. 本文利用热处理诱导晶间断裂现象来进行纳米间隙电极对的构筑. 通过低温热处理过程实现单个金晶界结的断裂, 使其从晶界结转化为悬空纳米间隙电极对. 所制备的纳米间隙电极对的间隙尺寸可达到亚5纳米, 采用 传统的微纳米加工方法很难实现该尺寸间隙电极对. 利用热处理诱导晶间断裂所制备的纳米间隙电极对具有诸多优点, 如形状稳定性好、间隙中无杂质颗粒残留等, 有望用来构筑两端或三端分子器件.

A training effect on electrical properties in nanoscale BiFeO3

We report our observation of the training effect on dc electrical properties in a nanochain of BiFeO3 as a result of large scale migration of defects under the combined influence of electric field and Joule heating. We show that an optimum number of cycles of electric field within the range zero to ~1.0 MV cm(-1) across a temperature range 80-300 K helps in reaching the stable state via a glass-transition-like process in the defect structure. Further treatment does not give rise to any substantial modification. We conclude that such a training effect is ubiquitous in pristine nanowires or chains of oxides and needs to be addressed for applications in nanoelectronic devices.