Akinori Irizawa

Pressure transmitting medium Daphne 7474 solidifying at 3.7 GPa at room temperature

A pressure transmitting medium named Daphne 7474, which solidifies at P(s)=3.7 GPa at room temperature, is presented. The value of P(s) increases almost linearly with temperature up to 6.7 GPa at 100 degrees C. The high pressure realized by a medium at the liquid state allows a higher limit of pressurization, which assures an ideal hydrostatic pressure. We show a volume change against pressure, pressure reduction from room to liquid helium temperature in a clamped piston cylinder cell, pressure distribution and its standard deviation in a diamond anvil cell, and infrared properties, which might be useful for experimental applications.

Technique for bulk Fermiology by photoemission applied to layered ruthenates

We report the Fermi surfaces of the superconductor

Electronic-Structure-Driven Magnetic Ordering in a Kondo Semiconductor CeOs2Al10

{\mathrm{Sr}}_{2}{\mathrm{RuO}}_{4}

Optical study of charge instability in CeRu2Al10 in comparison with CeOs2Al10 and CeFe2Al10

and the nonsuperconductor

Unraveling Genuine First Order Bulk Valence Transition and Kondo Resonance Behaviors in YbInCu4 by High Energy Photoelectron Spectroscopy

{\mathrm{Sr}}_{1.8}{\mathrm{Ca}}_{0.2}{\mathrm{RuO}}_{4}

Spin-Polarized Angle-Resolved Photoelectron Spectroscopy of the So-Predicted Kondo Topological Insulator SmB6

probed by bulk-sensitive high-energy angle-resolved photoemission. It is found that there is one square-shaped hole-like, one square-shaped electron-like, and one circle-shaped electron-like Fermi surface in both compounds. These results provide direct evidence for nesting instability giving rise to magnetic fluctuations. Our study clarifies that the electron correlation effects are changed with composition depending on the individual band.

Polymer Morphological Change Induced by Terahertz Irradiation

We report the anisotropic changes in the electronic structure of a Kondo semiconductor CeOs(2)Al(10) across an anomalous antiferromagnetic ordering temperature (T(0)) of 29 K, using optical conductivity spectra. The spectra along the a and c axes indicate that an energy gap due to the hybridization between conduction bands and nearly local 4f states, namely the c-f hybridization gap, emerges from a higher temperature continuously across T(0). Along the b axis, on the other hand, another energy gap with a peak at 20 meV becomes visible at 39 K (>T(0)) and fully opens at T(0) because of a charge instability. This result implies that the appearance of the energy gap, as well as the change in the electronic structure along the b axis, induces the antiferromagnetic ordering below T(0).

Collapse of Superconductivity in the Y123/Y124 Superlattice System Y2Ba4Cu7O15-δ

The anisotropic electronic structure responsible for the antiferromagnetic transition in CeRu

Bulk-sensitive photoemission of Mn5Si3

{}_{2}

Hard X-ray Photoelectron Spectroscopy of Metal–Insulator Transition in V6O13

Al