Akira Chikamatsu

Electronic Band Structure of Transparent Conductor: Nb-Doped Anatase TiO2

We have investigated electronic band structure of a transparent conducting oxide, Nb-doped anatase TiO2 (TNO), by means of first-principles band calculations and photoemission measurements. The band calculations revealed that Nb 4d orbitals are strongly hybridized with Ti 3d ones to form a d-nature conduction band, without impurity states in the in-gap region, resulting in high carrier density exceeding 1021 cm-3 and excellent optical transparency in the visible region. Furthermore, we confirmed that the results of valence band and core-level photoemission measurements are consistent with prediction by the present band calculations.

In vacuo photoemission study of atomically controlled La 1 − x Sr x Mn O 3 thin films: Composition dependence of the electronic structure

We have investigated change in the electronic structures of atomically controlled

Inherent charge transfer layer formation at La0.6Sr0.4FeO3∕La0.6Sr0.4MnO3 heterointerface

{\mathrm{La}}_{1\ensuremath{-}x}{\mathrm{Sr}}_{x}\mathrm{Mn}{\mathrm{O}}_{3}

Chemical potential shift and spectral-weight transfer in Pr1- xCaxMnO3 revealed by photoemission spectroscopy

(LSMO) thin films as a function of hole-doping levels

Robust Ti4+ states in SrTiO3 layers of La0.6Sr0.4MnO3∕SrTiO3∕La0.6Sr0.4MnO3 junctions

(x)

Transport properties and electronic states of anatase Ti1−xWxO2 epitaxial thin films

in terms of in vacuo photoemission spectroscopy (PES) and x-ray absorption spectroscopy (XAS) measurements. The in vacuo PES measurements on a well-ordered surface of high-quality epitaxial LSMO thin films enable us to reveal their intrinsic electronic structures, especially the structure near the Fermi level

Manifestation of correlation effects in the photoemission spectra of Ca1-xSrxRuO3

({E}_{F})

Metallic transport and large anomalous Hall effect at room temperature in ferrimagnetic Mn4N epitaxial thin film

. We found that overall the features of the valence band as well as the core levels monotonically shifted toward lower binding energy as

Band structure and Fermi surface of La 0.6 Sr 0.4 MnO 3 thin films studied by in situ angle-resolved photoemission spectroscopy

x

Valence changes associated with the metal-insulator transition in Bi1-xLaxNiO3

was increased, indicating the systematic chemical-potential shift of LSMO thin films with hole doping. The peak nearest to