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Dive into the research topics where Akira Hanafusa is active.

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Featured researches published by Akira Hanafusa.


Japanese Journal of Applied Physics | 1997

16.0% Efficient Thin-Film CdS/CdTe Solar Cells

Tetsuya Aramoto; Seiji Kumazawa; Hiroshi Higuchi; Takashi Arita; Satoshi Shibutani; Tuyoshi Nishio; Junji Nakajima; Miwa Tsuji; Akira Hanafusa; Takeshi Hibino; Hideaki Ohyama; Mikio Murozono

High efficiency cadmium sulfide (CdS)/cadmium telluride (CdTe) solar cells have been developed using ultrathin CdS films having a thickness of 50 nm. CdS films deposited on indium tin oxide (ITO)/#1737 glass substrates by the metal organic chemical vapor deposition technique, and CdTe films subsequently deposited by the close-spaced sublimation technique were used for the fabrication of CdS/CdTe solar cells. A photovoltaic conversion efficiency of 16.0% under Air Mass (AM) 1.5 conditions has been measured by the Japan Quality Assurance Organization.


Japanese Journal of Applied Physics | 2001

Performance of Graphite Pastes Doped with Various Materials as Back Contact for CdS/CdTe Solar Cell

Akira Hanafusa; Tetsuya Aramoto; Akikatsu Morita

To date the problem of developing a suitable back contact for CdS/CdTe solar cells has yet to be resolved. The Cu-doped graphite paste that is widely used as a back contact is associated with degradation problems due to possible Cu diffusion across the CdS/CdTe junction. This study was designed to find ways to improve the graphite paste for superior electrical contacts. Mixtures of graphite paste with various material constituents and dopants consisting of silver-, lead-, nickel-, antimony-, bismuth-, or phosphor-based compounds, were studied. Results show that the performances of solar cells fabricated from these graphite pastes vary with the change in the composition. In the cases of Ag2Te and Ni2P, we studied their relationship with the solar cell characteristics with regard to dopant quantity, and furthermore in the case of Ag2Te, with regard to the sintering temperature of the graphite electrode. A fill factor (F.F.) of over 0.65 and efficiencies over 13% were obtained with Ag2Te, Ag3PO4, Ag2MoO4, and NiTe, and efficiencies over 12% were obtained with AgF, AgCl, Ni2P, and Ni3P.


Archive | 1997

Method of preparing a semiconductor layer for an optical transforming device

Hiroshi Higuchi; Akira Hanafusa; Mikio Murozono; Hideaki Oyama


Archive | 1997

Method for preparing CdTe film and solar cell using the same

Hiroshi Higuchi; Seiji Kumazawa; Takashi Arita; Akira Hanafusa; Mikio Murozono; Tetsuya Aramoto


Archive | 1997

METHOD FOR FORMING CdTe FILM AND SOLAR BATTERY USING THE FILM

Tetsuya Aramoto; Takashi Arita; Akira Hanafusa; Hiroshi Higuchi; Seiji Kumazawa; Mikio Murozono


Archive | 1996

Method of manufacturing a compound semiconductor thin film for a photoelectric or solar cell device

Tsuyoshi Nishio; Satoshi Shibutani; Shigeo Kondoh; Mikio Murozono; Akira Hanafusa; Hideaki Oyama


Archive | 1997

METHOD FOR FORMING CdTe FILM

Tetsuya Aramoto; Takashi Arita; Akira Hanafusa; Hiroshi Higuchi; Seiji Kumazawa; Mikio Murozono


Archive | 1999

Method of fabricating a solar cell

Akira Hanafusa; Seiji Kumazawa; Mikio Murozono


Archive | 1996

A manufacturing method of compound semiconductor thinfilms and photoelectric device or solar cell using the same compound semiconductor thinfilms

Tsuyoshi Nishio; Satoshi Shibutani; Shigeo Kondoh; Mikio Murozono; Akira Hanafusa; Hideaki Oyama


Japanese journal of applied physics. Pt. 1, Regular papers & short notes | 2001

Performance of Graphite Pastes Doped with Various Materials as Back Contact for CdS/CdTe Solar Cell : Semiconductors

Akira Hanafusa; Tetsuya Aramoto; Akikatsu Morita

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