Akitoyo Konno

New concept high-voltage IGBT gate driver with self-adjusting active gate control function for SiC-SBD hybrid module

We present a new concept in insulated-gate bipolar transistor (IGBT) gate drivers with a blocking voltage up to 3.3kV that have a pulse transformer interface and a function for self-adjusting active gate control. The error-correcting decoder we proposed contributed to the reliability of signal transmission. Moreover, the method of gate control using differentiation of gate voltage could automatically adjust the timing of gate controls against variations in the threshold voltage or collector current without the use of external sensors. These functions were integrated into custom ICs. The new concept high-voltage IGBT gate drivers applied to a 3.3 kV/1200A silicon carbide Schottky barrier diode (SiC-SBD) hybrid-module suppressed ringing in the SiC-SBD and reduced the slew rate by 70%.

48.2: Ultra Thin IPS-Pro LCD-TVs Using Simple Side-Edge Backlight with RGB-LED and Novel Heat Radiation Structure

A 37-inch LCD-TV monitor with a thickness of 15.1 mm at the thinnest part has been developed. Light sources were RGB-LED ones located at the side edge of the light guide. Light sources mounted close together directly on ceramic substrate led to improved color uniformity of backlight. Furthermore, light use was more efficient because light sources were cooled by a new radiation structure.

P-48: Guiding Principles of Gray Level Color Gamut on LCDs for FPD-TV Application

The gray level dependence of the color gamut on a LCD, PDP and CRT is evaluated in both dark and lighted rooms. The color gamut on the LCD decreases sharply with gray level, and the dark gray level color gamut on the LCD is smaller than that on the CRT or PDP in a dark room. However, in a lighted room, the gray level dependence of color gamut on the LCD is better than that on the PDP. A higher contrast ratio is effective for improving the color gamut on LCDs in the dark rooms and the value of over 10000:1 is a good guideline for LCD-TV design.

High power density side-gate HiGT modules with sintered Cu having superior high-temperature reliability to sintered Ag

In this study, sintered Cu is shown to have superior reliability to that of sintered Ag, in a high-temperature thermal cycle test up to 200°C and superior power cycle durability at a maximum junction temperature of 175°C. A 1700 V low-stray-inductance dual module made with sintered Cu and a leading-edge side-gate HiGT (High-conductivity IGBT) is also shown to have high power density with low loss and ten times higher power cycle durability compared with Pb-rich solder.