Alain Villeneuve
Laval University
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Featured researches published by Alain Villeneuve.
IEEE Journal of Quantum Electronics | 1997
J. S. Aitchison; David C. Hutchings; Jin U. Kang; George I. Stegeman; Alain Villeneuve
We report experimental values for the nonlinear optical coefficients of AlGaAs, in the half-band-gap spectral region. The dispersion of the nonlinear refractive-index coefficient, n/sub 2/, is measured for both TE- and TM-polarized light. We observe n/sub 2/(TE)>n/sub 2/(TM) and a ratio of cross-phase modulation to self-phase modulation (TE) of /spl sim/0.95, as predicted from band structure calculations. The spectral dependence of the two- and three-photon absorption coefficients are also measured. Finally, the implications for all-optical switching and spatial soliton propagation are discussed.
Journal of Lightwave Technology | 1999
Jean-Francois Viens; Chiara Meneghini; Alain Villeneuve; Tigran Galstian; Emile J. Knystautas; Michel A. Duguay; Kathleen Richardson; Thierry Cardinal
This paper reports on the fabrication process of As-S-(Se)-based chalcogenide glass optical waveguides using three techniques: photolithography, laser beam writing, and ion implantation. The fabrication method of the bulk sulfide glasses and the processing of integrated devices are described and assessed in light of the propagation characteristics and optical losses in each case.
Applied Physics Letters | 1992
Alain Villeneuve; Yang Cc; P. Wigley; George I. Stegeman; J. S. Aitchison; C.N. Ironside
Efficient ultrafast all‐optical switching in nonlinear directional couplers made of AlGaAs and AlGaAs/GaAs quantum wells near half the band gap is reported. The switching is limited by multiphoton absorption which is dominated by three‐photon absorption in this spectral range. The three‐photon absorption in the quantum well nonlinear directional coupler is stronger than that of bulk AlGaAs. Autocorrelations of the output pulses in the bar and cross states confirm pulse breakup through nonlinear coupling, and illustrate the effects of multiphoton absorption. All sets of experimental data are fitted well by a theoretical model.
Optics Letters | 1996
C. Paré; Alain Villeneuve; Pierre-André Bélanger; Nick Doran
We propose the use of a dispersive medium with a negative nonlinear refractive-index coefficient as a way to compensate for the dispersion and the nonlinear effects resulting from pulse propagation in an optical fiber. The undoing of pulse interaction might allow for increased bit rates.
Journal of The Optical Society of America B-optical Physics | 1998
Chiara Meneghini; Alain Villeneuve
We observed two-photon-induced refractive-index changes in As2S3 by exposure in the 800-nm region. We studied this photosensitivity by writing interference gratings on a 2-μm As2S3 thin film. This property is the key to creating self-written channel waveguides in a planar As2S3 slab.
Journal of Lightwave Technology | 1999
Ali Saliminia; Alain Villeneuve; Tigran V. Galstyan; Sophie LaRochelle; Kathleen Richardson
First- and second order Bragg reflectors at telecommunication wavelength (1.5 /spl mu/m) were fabricated in single-mode monolayer (As/sub 2/S/sub 3/) and multilayer (AsSSe-AsS) chalcogenide glass (ChG) planar waveguides with near bandgap illumination using an interferometric technique. Reflectivities as high as 90% near 1555 nm, and index modulations up to 3/spl times/10/sup -4/ were achieved. The volume photodarkening effect is the principal mechanism involved in the formation of the Bragg gratings.
Journal of Non-crystalline Solids | 2000
J. Fick; Emile J. Knystautas; Alain Villeneuve; F. Schiettekatte; S. Roorda; Kathleen Richardson
Abstract The spectral properties of the chalcogenide glasses As2S3 and As24S38Se38-doped with Er3+ are presented and discussed. Thin films were formed by thermal evaporation and the erbium doping was obtained by subsequent ion implantation. Strong Er3+ emission at 1.54 μm has been observed. The high refractive index of these chalcogenide glasses lead to Er3+ emission cross-sections (15×10 −21 cm 2 ) which are two times higher than for doped silica glass. The lifetime of the Er3+ metastable 4I13/2 energy level was measured to be 2.3 ms. This short lifetime is consistent with the high emission cross-section. Furthermore, the very low phonon energies of chalcogenide glasses lead to relatively long lifetimes of the Er3+ 4I11/2 pump level, which have been measured to be of the order of 0.25 ms. These spectral properties make this glass a good candidate for applications in the field of integrated optics.
Applied Physics Letters | 1993
Alain Villeneuve; Chia-En Yang; George I. Stegeman; Chen‐Hui Lin; Hao-Hsiung Lin
The wavelength dependence of the nonlinear refractive index and two‐photon absorption coefficient near half the band gap was measured in an AlGaAs waveguide. The two photon figure of merit for efficient nonlinear optics in AlGaAs is shown to be quite favorable for photon energies less than one half the band gap.
Biomedical Optics Express | 2011
Steve Bégin; Bryan Burgoyne; Vincent Mercier; Alain Villeneuve; Réal Vallée; Daniel Côté
We present a wavelength-swept coherent anti-Stokes Raman scattering (WS-CARS) spectroscopy system for hyperspectral imaging in thick tissue. We use a strategy where the Raman lines are excited sequentially, circumventing the need for a spectrometer. This fibre laser system, consisting of a pump laser synchronized with a rapidly tunable programmable laser (PL), can access Raman lines over a significant fraction of the high wavenumber region (2700–2950 cm−1) at rates of up to 10,000 spectral points per second. To demonstrate its capabilities, we have acquired WS-CARS spectra of several samples as well as images and hyperspectral images (HSI) of thick tissue both in forward and epi-detection. This instrument should be especially useful in providing local biochemical information with surrounding context supplied by imaging.
Applied Physics Letters | 1994
Jin U. Kang; Alain Villeneuve; Mansoor Sheik-Bahae; George I. Stegeman; K. Al-hemyari; J. Stewart Aitchison; C.N. Ironside
We report measurements of the spectral dispersion and the magnitude of three‐photon absorption in Al0.18Ga0.82As for photon energies between one half and one third the band gap and show that a two‐parabolic‐band model is valid in this material. These results indicate that there is a limited spectral range below half the band gap in AlGaAs (and presumably all semiconductors) in which the bound electronic optical nonlinearity can be used without significant multiphoton absorption.