Alan R. Reinberg

Dry Processing for Fabrication of VLSI Devices

Publisher Summary The process of changing a flat silicon wafer into a functioning electron device makes use of several different structure-forming techniques. The more commonly recognized are: chemical conversion of silicon into silicon oxide; film deposition by evaporation, sputtering, chemical vapor deposition (CVD), plasma-activated CVD, and mechanical processes such as spinning and spraying; diffusion; ion implantation; pulsed annealing; and selective removal of material by etching or lift-off. Except for mechanical deposition, which frequently involves the use of solvents, and selective removal processes, for which liquids are also required, most of the processes may be classified as dry. The use of dry etch techniques has already become commonplace at some stages in the manufacture of state of the art integrated circuits and it is generally believed that the successful approach to the manufacture of micrometer and submicrometer devices will have to make extensive use of dry etching.

5 – Plasma Etch Equipment and Technology

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