Alberto Palmero

Tilt angle control of nanocolumns grown by glancing angle sputtering at variable argon pressures

We show that the tilt angle of nanostructures obtained by glancing angle sputtering is finely tuned by selecting the adequate argon pressure. At low pressures, a ballistic deposition regime dominates, yielding high directional atoms that form tilted nanocolumns. High pressures lead to a diffusive regime which gives rise to vertical columnar growth. Monte Carlo simulations reproduce the experimental results indicating that the loss of directionality of the sputtered particles in the gas phase, together with the self-shadowing mechanism at the surface, are the main processes responsible for the development of the columns.

Theoretical and experimental characterization of TiO2 thin films deposited at oblique angles

The microstructural features of amorphous TiO2 thin films grown by the electron beam physical vapour deposition technique at oblique angles have been experimentally and theoretically studied. The microstructural features of the deposited films were characterized by considering both the column tilt angle and the increase in the column thickness with height. A Monte Carlo model of film growth has been developed that takes into account surface shadowing, short-range interaction between the deposition species and the film surface, as well as the angular broadening of the deposition flux when arriving at the substrate. The good match between simulations and experimental results indicates the importance of these factors in the growth and microstructural development of thin films deposited at oblique angles.

Growth regimes of porous gold thin films deposited by magnetron sputtering at oblique incidence: from compact to columnar microstructures

Growth regimes of gold thin films deposited by magnetron sputtering at oblique angles and low temperatures are studied from both theoretical and experimental points of view. Thin films were deposited in a broad range of experimental conditions by varying the substrate tilt angle and background pressure, and were analyzed by field emission scanning electron microscopy and grazing-incidence small-angle x-ray scattering techniques. Results indicate that the morphological features of the films strongly depend on the experimental conditions, but can be categorized within four generic microstructures, each of them defined by a different bulk geometrical pattern, pore percolation depth and connectivity. With the help of a growth model, a microstructure phase diagram has been constructed where the main features of the films are depicted as a function of experimentally controllable quantities, finding a good agreement with the experimental results in all the studied cases.

On the microstructure of thin films grown by an isotropically directed deposition flux

The influence of isotropically directed deposition flux on the formation of the thin film microstructure at low temperatures is studied. For this purpose we have deposited TiO2 thin films by two different deposition techniques: reactive magnetron sputtering, in two different experimental configurations, and plasma enhanced chemical vapor deposition. The obtained results indicate that films grown under conditions where deposition particles do not possess a clear directionality, and in the absence of a relevant plasma/film interaction, present similar refractive indices no matter the deposition technique employed. The film morphology is also similar and consists of a granular surface topography and a columnarlike structure in the bulk whose diameter increases almost linearly with the film thickness. The deposition has been simulated by means of a Monte Carlo model, taking into account the main processes during growth. The agreement between simulations and experimental results indicates that the obtained mic...

Morphological evolution of pulsed laser deposited ZrO2 thin films

Morphological evolution of ZrO2 thin films deposited during pulsed laser deposition of Zr in O2 atmosphere has been experimentally studied at two different film deposition temperatures, 300 and 873 K. The roughness exponent, α, the growth exponent, β, the coarsening exponent, 1/z, and the exponent defining the evolution of the characteristic wavelength of the surface, p, for depositions at 300 K amounted to β=1.0±0.1, α=0.4±0.1, 1/z=0.34±0.03, and p=0.49±0.03, whereas for depositions carried out at 873 K amounted to β=0.3±0.3, α=0.4±0.2, and 1/z=0.0±0.2. Experimental error becomes important due to the flat morphology of the films inherent to the deposition technique. The change in the surface topography with the film temperature has been studied with the help of a simple Monte Carlo model which indicates the existence of two different growth regimes: a shadowing dominated growth, occurring at low temperatures, characterized by calculated values β=1.00±0.04, α=0.50±0.04, p=0.46±0.01, and 1/z=0.35±0.02 and ...

Nanocolumnar growth of thin films deposited at oblique angles: Beyond the tangent rule

The growth of nanostructured physical vapor deposited thin films at oblique angles is becoming a hot topic for the development of a large variety of applications. Up to now, empirical relations, such as the so-called tangent rule, have been uncritically applied to account for the development of the nanostructure of these thin films even when they do not accurately reproduce most experimental results. In the present paper, the growth of thin films at oblique angles is analyzed under the premises of a recently proposed surface trapping mechanism. The authors demonstrate that this process mediates the effective shadowing area and determines the relation between the incident angle of the deposition flux and the tilt angle of the columnar thin film nanostructures. The analysis of experimental data for a large variety of materials obtained in our laboratory and taken from the literature supports the existence of a connection between the surface trapping efficiency and the metallic character of the deposited materials. The implications of these predictive conclusions for the development of new applications based on oblique angle deposited thin films are discussed.

Influence of plasma-generated negative oxygen ion impingement on magnetron sputtered amorphous SiO2 thin films during growth at low temperatures

Growth of amorphous SiO2 thin films deposited by reactive magnetron sputtering at low temperatures has been studied under different oxygen partial pressure conditions. Film microstructures varied from coalescent vertical column-like to homogeneous compact microstructures, possessing all similar refractive indexes. A discussion on the process responsible for the different microstructures is carried out focusing on the influence of (i) the surface shadowing mechanism, (ii) the positive ion impingement on the film, and (iii) the negative ion impingement. We conclude that only the trend followed by the latter and, in particular, the impingement of O- ions with kinetic energies between 20 and 200 eV, agrees with the resulting microstructural changes. Overall, it is also demonstrated that there are two main microstructuring regimes in the growth of amorphous SiO2 thin films by magnetron sputtering at low temperatures, controlled by the amount of O2 in the deposition reactor, which stem from the competition betw...

Electron temperature measurement in a slot antenna 2.45 GHz microwave plasma source

The electron temperature in a low-pressure microwave electron cyclotron resonance slot antenna produced plasma is obtained. The upper excited atomic level populations have been measured through atomic emission spectroscopy. It has been shown that the Corona balance provides a good description of such levels and, based on this fact, a simple argon collisional-radiative model has been used in the temperature determination.

On the formation of the porous structure in nanostructured a-Si coatings deposited by dc magnetron sputtering at oblique angles

The formation of the porous structure in dc magnetron sputtered amorphous silicon thin films at low temperatures is studied when using helium and/or argon as the processing gas. In each case, a-Si thin films were simultaneously grown at two different locations in the reactor which led to the assembly of different porous structures. The set of four fabricated samples has been analyzed at the microstructural level to elucidate the characteristics of the porous structure under the different deposition conditions. With the help of a growth model, we conclude that the chemical nature of the sputter gas not only affects the sputtering mechanism of Si atoms from the target and their subsequent transport in the gaseous/plasma phase towards the film, but also the pore formation mechanism and dynamics. When Ar is used, pores emerge as a direct result of the shadowing processes of Si atoms, in agreement with Thorntons structure zone model. The introduction of He produces, in addition to the shadowing effects, a new process where a degree of mobility results in the coarsening of small pores. Our results also highlight the influence of the composition of sputtering gas and tilt angles (for oblique angle deposition) on the formation of open and/or occluded porosity.

Nanostructured Ti thin films by magnetron sputtering at oblique angles

The growth of Ti thin films by the magnetron sputtering technique at oblique angles and at room temperature is analysed from both experimental and theoretical points of view. Unlike other materials deposited in similar conditions, the nanostructure development of the Ti layers exhibits an anomalous behaviour when varying both the angle of incidence of the deposition flux and the deposition pressure. At low pressures, a sharp transition from compact to isolated, vertically aligned, nanocolumns is obtained when the angle of incidence surpasses a critical threshold. Remarkably, this transition also occurs when solely increasing the deposition pressure under certain conditions. By the characterization of the Ti layers, the realization of fundamental experiments and the use of a simple growth model, we demonstrate that surface mobilization processes associated to a highly directed momentum distribution and the relatively high kinetic energy of sputtered atoms are responsible for this behaviour.