Aldrin Antony

Transparent conducting zinc oxide thin film prepared by off-axis rf magnetron sputtering

Highly conducting and transparent ZnO : Al thin films were grown by off-axis rf magnetron sputtering on amorphous silica substrates without any post-deposition annealing. The electrical and optical properties of the films deposited at various substrate temperatures and target to substrate distances were investigated in detail. Optimized ZnO : Al films have conductivity of 2200 S cm-1 and average transmission in the visible range is higher than 85%. The conductivity and mobility show very little temperature dependence.

The electronic structure of co-sputtered zinc indium tin oxide thin films

Zinc indium tin oxide (ZITO) transparent conductive oxide layers were deposited via radio frequency (RF) magnetron co-sputtering at room temperature. A series of samples with gradually varying zinc content was investigated. The samples were characterized with x-ray and ultraviolet photoemission spectroscopy (XPS, UPS) to determine the electronic structure of the surface. Valence and conduction bands maxima (VBM, CBM), and work function were determined. The experiments indicate that increasing Zn content results in films with a higher defect rate at the surface leading to the formation of a degenerately doped surface layer if the Zn content surpasses ∼50%. Furthermore, the experiments demonstrate that ZITO is susceptible to ultraviolet light induced work function reduction, similar to what was earlier observed on ITO and TiO2 films.

Growth and Properties of ZnO:Al on Textured Glass for Thin Film Solar Cells

Aluminium induced texturing (AIT) method has been used to texture glass substrates in order to enhance the photon absorption in thin film solar cells. The resultant glass roughness has been analyzed by varying the AIT process parameters and it has been found that the deposition method of Al is a decisive factor in tuning the texture. Two types of textures, a soft (texture E) and a rough texture (texture S), were achieved from the thermally evaporated and sputtered Al layers through AIT process. Aluminium-doped zinc oxide (AZO) layers of different thickness were deposited over both textures and over smooth glass. Haze values above 30% were obtained for texture S

Fabrication of cost-effective, highly reproducible large area arrays of nanotriangular pillars for surface enhanced Raman scattering substrates

Development of cost-effective, highly reproducible non-conventional fabrication techniques for anisotropic metal nanostructures is essential to realizing potential applications of plasmonic devices, photonic devices, and surface enhanced Raman scattering (SERS) phenomenon based sensors. This report highlights the fabrication of nanotriangle arrays via nanoimprinting to overcome difficulties in creating large-area SERS active substrates with uniform, reproducible Raman signals. Electron beam lithography of anisotropic nanostructures, formation of arrays of nanotriangles in silicon and the transfer of triangular shapes to polymethylmethacrylate (PMMA) sheets via nanoimprinting have not been reported elsewhere. The reuse of silicon masters offers potential for production of low cost SERS substrates. The SERS activity and reproducibility of nanotriangles are illustrated and a consistent average enhancement factor of up to ~2.9 × 1011, which is the highest value reported for a patterned SERS substrate, is achieved.

Domain matched epitaxial growth of (111) Ba0.5Sr0.5TiO3 thin films on (0001) Al2O3 with ZnO buffer layer

Epitaxial (111) Ba0.5Sr0.5TiO3 (BST) thin films have been grown by pulsed laser deposition on (0001) Al2O3 substrate with ZnO as buffer layer. The x-ray ω-2θ, Φ-scan and reciprocal space mapping indicate epitaxial nature of BST thin films. The domain matched epitaxial growth of BST thin films over ZnO buffer layer was confirmed using Fourier filtered high resolution transmission electron microscope images of the film-buffer interface. The incorporation of ZnO buffer layer effectively suppressed the lattice mismatch and promoted domain matched epitaxial growth of BST thin films. Coplanar inter digital capacitors fabricated on epitaxial (111) BST thin films show significantly improved tunable performance over polycrystalline thin films.

Room temperature H2 plasma treatment for enhanced passivation of silicon/TiO2 interface

Simultaneous requirement of excellent interface passivation and low thermal budget is a desirable feature for low cost Si based carrier selective solar cells. Accordingly, Titanium dioxide (TiO2), a widely used electron selective material, finds challenges related to thermal annealing like phase change and compatibility with thermal budget of hole transport layers. To address this, here we report a H2 plasma treatment process at room temperature which significantly reduces the surface recombination velocity (∼40 cm/s). Consequently, the reverse saturation current of the Si-TiO2 diode improves by a factor of 40, built-in potential improves by 100 mV, and the diode exhibits a near unity ideality factor. Using the same method, our Si-based double heterojunction solar cell results in an absolute increase of 2.4% in efficiency over devices with conventional thermal annealing. Given the ease of implementation and excellent performance, the proposed method is a promising alternative to thermal annealing for Si based heterojunction devices.

Enhancement of a-Si:H solar cell efficiency by Y2O3 : Yb3+, Er3+ near infrared spectral upconverter

The optical properties of Yb3+/Er3+ doped Y2O3 upconversion phosphor and the enhancement of efficiency of a-Si:H solar cell on incorporation of upconverter are investigated. The Y2O3 host material has high corrosion resistance, thermal stability, chemical stability, low toxicity and relatively low phonon energy (≈ 500 cm-1). Y2O3:Yb3+ (x %): Er3+ (y %) upconversion nanophosphors with different dopant concentrations were synthesized via simple hydrothermal method followed by a heat treatment at 1200°C for 12 hrs. Highly crystalline, quasi-spherical, body centered cubic Y2O3 structure was obtained. The structure, phase and morphology of the nanocrystals were determined using x-ray diffraction and SEM. Following pumping at 980 nm two dominant emission bands were observed at about 550 nm(green) and 660 nm(red), corresponding to 2H11/2, 4S3/2 → 4I15/2 and 4F9/2 → 4I15/2 transitions respectively. The dependence of emission intensity on pump power shows that the mechanism involved is two photon absorption. The upconversion phosphor along with a binder is coupled behind the a-Si:H solar cell which absorbs transmitted sub-band-gap photons and emits back the upconverted visible light which can be absorbed by the solar cell. Under suitable intensity of illumination the solar cell short circuit current is found to be increased on adding the upconversion layer.

Cyclically Varying Hydrogen Dilution for the Growth of Very Thin and Doped Nanocrystalline Silicon Films by Hot-Wire CVD

An important issue for the massive implementation of thin silicon technology in photovoltaic is the use of plastic substrates, which allow the use of roll-to-roll deposition systems and planar monolithic interconnection between the cells. However, the use of plastic substrates require a fully low temperature process; especially critical in the deposition of the thin amorphous (a-Si:H) or nanocrystalline (nc-Si:H) layers. Hot-Wire Chemical Vapour Deposition (HW-CVD) technique has demonstrated to be a good alternative to deposit quality thin films at low temperature. In this paper we focus our study on very thin (50 nm) n- and p-doped nc-Si:H films deposited at low substrate temperature around 100°C. We have observed that, in this low temperature deposition conditions, the promotion of an a Si:H incubation layer leads to a poor doping efficiency and poor electrical properties of the films. Hence, in addition to the optimization of the deposition conditions, we deposited doped layers by cyclically varying the hydrogen dilution (CVH) during deposition process. This CVH method promotes a layer-by-layer growth and inhibits the formation of the incubation layer. Several doped nc-Si:H layers have been deposited with and without this CVH method. The structural, electrical and optical properties of these films and advantage of CVH in improving the device quality of the thin doped layers are reported.