Aleksandr A. Andronov

Hot electron population inversion and cyclotron resonance negative differential conductivity in semiconductors

Abstract The Monte-Carlo calculation is used to support the suggestion4 that the hot electrons in semiconductors, the spontaneous optical phonon emission being the main scattering process, may exhibit a negative differential conductivity (NDC) at the cyclotron resonance (CR). A brief discussion of the possibility of NDC at the high frequencies (ω ≳ 2–5 × 1012sec-1) under the population inversion in n-GaAs in a strong electric field1 is also given.

Hot electron streaming and population inversion for polar and deformation scattering

Abstract Comparison of hot electron phenomena under polar (n-GaAs) and deformation (p-Ge) inelastic optical phonon scattering is made on the basis of analytical calculation and numerical simulation by the Monte-Carlo method. The difference in the character of drift velocity saturation in these materials is demonstrated. It is shown that population inversion of hot carriers in crossed E ⊥ B fields provides negative magnetoresistance and may give rise (in p-Ge) even to NDC. It is shown that in p-Ge in crossed fields overpopulation of the light hole band arises which can strongly affect J-E characteristics and can result in amplification of FIR radiation.