Aleksey E. Bolotnikov

Properties of Pt Schottky Type Contacts on High-Resistivity CdZnTe Detectors

In this paper, we present studies of the I- V characteristics of CdZnTe (CZT) detectors with Pt contacts fabricated from high-resistivity single crystals grown by the high-pressure Bridgman process. We have analyzed the experimental I- V curves using a model that approximates the CZT detector as a system consisting of a reversed Schottky contact, in series with the bulk resistance. Least-square fit to the experimental data yields 0.78- 0.79 eV for the Pt-CZT Schottky barrier height, and <20V for the voltage required to deplete a 2mm thick CZT detector. We demonstrate that, at high bias, the thermionic current over the Schottky barrier, the height of which is reduced due to an interfacial layer between the contact and CZT material, controls the leakage current of the detectors. In many cases, the dark current is not determined by the resistivity of the bulk material, but rather the properties of the contacts; namely, by the interfacial layer between the contact and CZT material.

Charge Loss between contacts of CdZnTe pixel detectors

The surface of Cd_(1−x)Zn_xTe (CZT) material has high resistivity but is not a perfect dielectric. Even a small surface conductivity can affect the electric field distribution, and therefore, the charge collection efficiency of a CZT pixel detector. The paper describes studies of this phenomenon for several contact configurations made on a single CZT detector. We have determined the maximum inter-contact separation at which the surface inter-pixel charge loss can be neglected.

Development of the High-Energy Focusing Telescope (HEFT) balloon experiment

The High Energy Focusing Telescope (HEFT) is a balloon-borne experiment employing focusing optics in the hard X-ray/soft gamma-ray band (20 - 100 keV) for sensitive observations of astrophysical sources. The primary scientific objectives include imaging and spectroscopy of 44Ti emission in young supernova remnants, sensitive hard X-ray observations of obscured Active Galactic Nuclei, and spectroscopic observations of accreting high-magnetic field pulsars. Over the last four years, we have developed grazing-incidence depth-graded multilayer optics and high spectral resolution solid stat Cadmium Zinc Telluride pixel detectors in order to assemble a balloon-borne experiment with sensitivity and imaging capability superior to previous satellite missions operating in this band. In this paper, we describe the instrument design, and present recent laboratory demonstrations of the optics and detector technologies.

Numerical modelling of charge-sharing in CdZnTe pixel detectors

In this paper, we describe our study of charge-sharing events in CdZnTe detectors being developed for the HEFT telescope. We specify the detector design, and discuss an experiment we have performed to investigate charge sharing between pixels. We have also developed a numerical model to study the charge transport in the detector. It emulates the physical processes of charge transport within the CdZnTe crystal, especially the process of drift. We discuss this numerical model of the detector in detail. With our numerical model, we are able to reproduce the general features of the charge-sharing events. We have found that the amount of charge loss is very sensitive to the surface /spl mu//spl tau/, the product of charge mobility and trapping time, of CdZnTe; we present estimates of (/spl mu//spl tau/)/sub surface/ from our model. Further work will focus on more detailed analysis of diffusion, in order to gain a complete understanding of these charge-sharing events in CdZnTe pixel detectors.

Effects of bulk and surface conductivity on the performance of CdZnTe pixel detectors

We studied the effects of bulk and surface conductivity on the performance of high-resistivity CdZnTe (CZT) pixel detectors with Pt contacts. We emphasize the difference in mechanisms of the bulk and surface conductivity as indicated by their different temperature behaviors. In addition, the existence of a thin (10-100 /spl Aring/) oxide layer on the surface of CZT, formed during the fabrication process, affects both bulk and surface leakage currents. We demonstrate that the measured I-V dependencies of bulk current can be explained by considering the CZT detector as a metal-semiconductor-metal system with two back-to-back Schottky-barrier contacts. The high-surface leakage current is apparently due to the presence of a low-resistivity surface layer that has characteristics that differ considerably from those of the bulk material. This surface layer has a profound effect on the charge-collection efficiency in detectors with multicontact geometry; some fraction of the electric field lines that originated on the cathode intersects the surface areas between the pixel contacts where the charge produced by an ionizing particle gets trapped. To overcome this effect, we place a grid of thin electrodes between the pixel contacts. When the grid is negatively biased, the strong electric field in the gaps between the pixels forces the electrons landing on the surface to move toward the contacts, preventing the charge loss. We have investigated these effects by using CZT pixel detectors indium bump-bonded to a custom-built VLSI readout chip.

The Effect of Cathode Bias (Field Effect) on the Surface Leakage Current of CdZnTe Detectors

Surface resistivity is an important parameter of multi-electrode CZT detectors such as coplanar-grid, strip, or pixel detectors. Low surface resistivity results in a high leakage current and affects the charge collection efficiency in the areas near contacts. Thus, it is always desirable to have the surface resistivity of the detector as high as possible. In the past the most significant efforts were concentrated to develop passivation techniques for CZT detectors. However, as we found, the field-effect caused by a bias applied on the cathode can significantly reduce the surface resistivity even though the detector surface was carefully passivated. In this paper we illustrate that the field-effect is a common feature of the CZT multi-electrode detectors, and discuss how to take advantage of this effect to improve the surface resistivity of CZT detectors.

Development of CdZnTe pixel detectors for astrophysical applications

Over the last four years we have been developing imaging Cadmium Zinc Telluride pixel detectors optimized for astrophysical focusing hard X-ray telescopes. This application requires sensors with modest area (approximately 2 cm X 2 cm), relatively small (approximately less than 500 micrometer) pixels and sub-keV energy resolution. For experiments operating in satellite orbits, low energy thresholds of approximately 1 - 2 keV are also desirable. In this paper we describe the desired detector performance characteristics, and report on the status of our development effort. In particular, we present results from a prototype sensor with a custom low- noise VLSI readout designed to achieve excellent spectral resolution and good imaging performance in the 2 - 100 keV band

First test results from a high-resolution CdZnTe pixel detector with VLSI readout

We are developing a CdZnTe pixel detector with a custom low- noise analog VLSI readout for use in the High-Energy Focusing Telescope balloon experiment, as well as for future space astronomy applications. The goal of the program is to achieve good energy resolution (< 1 keV FWHM at 60 keV) and low threshold in a sensor with approximately 500 micrometers pixels. We have fabricated several prototype detector assemblies with 2 mm thick, 680 by 650 micrometers pitch CdZnTe pixel sensors indium bump bonded a VLSI readout chip developed at Caltech. Each readout circuit in the 8 X 8 prototype is matched to the detector pixel size, and contains a preamplifier, shaping amplifiers, and a peak stretcher/discriminator. In the first 8 X 8 prototype, we have demonstrated the low-noise preamplifier by routing the output signals off-chip for shaping and pulse-height analysis. Pulse height spectra obtained using a 241Am source, collimated to illuminate a single pixel, show excellent energy resolution of 1.1 keV FWHM for the 60 keV line at room temperature. Line profiles are approximately Gaussian and dominated by electronic noise, however a small low energy tail is evident for the 60 keV line. We obtained slightly improved resolution of 0.9 keV FWHM at 60 keV by cooling the detector to 5 degree(s)C, near the expected balloon- flight operating temperature. Pulse height spectra obtained with the collimated source positioned between pixels show the effect of signal sharing for events occurring near the boundary. We are able to model the observed spectra using a Monte-Carlo simulation that includes the effects of photon interaction, charge transport and diffusion, pixel and collimator geometry, and electronic noise. By using the model to simulate the detector response to uncollimated radiation (including the effect of finite trigger threshold for reconstruction of the total energy of multi-pixel events), we find the energy resolution to be degraded by only 10% for full-face illumination, compared to the collimated case. The small value of the degradation is due directly to the low readout noise and amplifier threshold.

Optimal contact geometry for CdZnTe pixel detectors

We are developing CdZnTe pixel detectors for use as focal plane sensors in astronomical hard X-ray telescopes. To optimize the spectral response and imaging performance, we are investigating the effect of contact geometry on charge collection. Specifically, we have studied contact designs with orthogonal thin strips placed between pixel contacts. We apply a negative bias on the grid with respect to the pixel potential to force charge to drift toward the contacts. The grid bias is selected to be just sufficient to avoid charge collection on the grid, while increasing the transverse electric field on the surface between contacts. In contrast to focusing electrodes designed to force field lines to terminate on the pixel contact, our approach allows us to overcome the effects of charge loss between the pixels without significant increase of the leakage current, improving the overall energy resolution of the detector. In this paper we describe the performance of a CdZnTe pixel detector containing a grid electrode, bonded to a custom low-noise VLSI readout. We discuss the advantages of this type of detector for high spectral resolution applications.

Use of a pulsed laser to study properties of CdZnTe pixel detectors

We have investigated the utility of employing a short (<4 ns) pulsed laser with wavelength tunable between 600 - 950 nm as a tool for studying and characterizing CdZnTe detectors. By using a single mode optical fiber and simple optics, we can focus the beam to a spot size of less than 10 micrometers and generate the number of the excess carriers equivalent to a several MeV gamma-ray either at the surface or deep inside the sample. The advantages of this technique over use of a collimated X-ray or alpha particle source are strong induced signal, precise pointing, and triggering capability. As examples of using this technique, we present the results of measurements of the drift velocity, electron lifetime, and electric field line distribution inside CZT pixel detectors.