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Dive into the research topics where Aleksey V. Arsenin is active.

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Featured researches published by Aleksey V. Arsenin.


Nano Letters | 2012

Surface Plasmon Polariton Amplification upon Electrical Injection in Highly Integrated Plasmonic Circuits

Dmitry Yu. Fedyanin; Alexey V. Krasavin; Aleksey V. Arsenin; Anatoly V. Zayats

We propose a very efficient approach for amplification of surface plasmon polaritons (SPPs) in a nanoscale waveguiding geometry with strong (∼λ/10) mode confinement. The implemented scheme of electric pumping is based on a single-heterostructure Schottky-barrier diode and has been numerically shown to ensure full compensation of the SPP propagation losses at wavelengths around 3 μm and, moreover, to provide net SPP gain. The presented concept creates the backbone for the implementation of highly integrated large-scale hybrid electronic-plasmonic circuits operating at extremely high speeds and opens the prospects for the realization of integrated coherent SPP sources.


ACS Applied Materials & Interfaces | 2015

Highly Sensitive and Selective Sensor Chips with Graphene-Oxide Linking Layer

Yury V. Stebunov; Olga A. Aftenieva; Aleksey V. Arsenin; Valentyn S. Volkov

The development of sensing interfaces can significantly improve the performance of biological sensors. Graphene oxide provides a remarkable immobilization platform for surface plasmon resonance (SPR) biosensors due to its excellent optical and biochemical properties. Here, we describe a novel sensor chip for SPR biosensors based on graphene-oxide linking layers. The biosensing assay model was based on a graphene oxide film containing streptavidin. The proposed sensor chip has three times higher sensitivity than the carboxymethylated dextran surface of a commercial sensor chip. Moreover, the demonstrated sensor chips are bioselective with more than 25 times reduced binding for nonspecific interaction and can be used multiple times. We consider the results presented here of importance for any future applications of highly sensitive SPR biosensing.


Optics Express | 2011

Surface plasmon polariton amplification in metal-semiconductor structures

Dmitry Yu. Fedyanin; Aleksey V. Arsenin

We propose a novel scheme of surface plasmon polariton (SPP) amplification that is based on a minority carrier injection in a Schottky diode. This scheme uses compact electrical pumping instead of bulky optical pumping. Compact size and a planar structure of the proposed amplifier allow one to utilize it in integrated plasmonic circuits and couple it easily to passive plasmonic devices. Moreover, this technique can be used to obtain surface plasmon lasing.


Journal of Optics | 2010

Backward waves in planar insulator?metal?insulator waveguide structures

D. Yu. Fedyanin; Aleksey V. Arsenin; V. G. Leiman; A. D. Gladun

Existence conditions of backward waves and waves with zero group velocity in insulator–metal–insulator (IMI) structures are obtained and expressions for the group velocity of the surface plasmon polariton (SPP) are derived. We consider the general case when the two insulator half-spaces may be identical or different. The effect of losses on dispersion curves and values of the energy velocity is analyzed. The obtained equations are used for a characterization and a detailed study of backward waves in thin silver film waveguides.


Optics Express | 2017

Optical constants and structural properties of thin gold films

Dmitry I. Yakubovsky; Aleksey V. Arsenin; Yury V. Stebunov; Dmitry Yu. Fedyanin; Valentyn S. Volkov

We report a comprehensive experimental study of optical and electrical properties of thin polycrystalline gold films in a wide range of film thicknesses (from 20 to 200 nm). Our experimental results are supported by theoretical calculations based on the measured morphology of the fabricated gold films. We demonstrate that the dielectric function of the metal is determined by its structural morphology. Although the fabrication process can be absolutely the same for different films, the dielectric function can strongly depend on the film thickness. Our studies show that the imaginary part of the dielectric function of gold, which is responsible for optical losses, rapidly increases as the film thickness decreases for thicknesses below 80 nm. At the same time, we do not observe a noticeable dependence of optical constants on the film thickness for thicker samples. These findings establish design rules for thin-film plasmonic and nanophotonic devices.


Optics Express | 2010

Transmission of surface plasmon polaritons through a nanowire array: mechano-optical modulation and motion sensing.

Dmitry Yu. Fedyanin; Aleksey V. Arsenin

Using the coupled-mode theory, we study the transmission of surface plasmon polaritons (SPPs) guided by a thin metal film through an array of N identical nanowires, which are parallel to each other and to the surface of the metal film. By varying the parameters of the nanowire array, one can control the intensity of the transmitted SPP. Furthermore, we propose a novel mechano-optical modulation technique. The intensity of the transmitted SPP is modulated by changing the distance between the nanowire array and the metal film. The modulation frequency is in the kilohertz or megahertz range, owing to the unique mechanical properties of nanowires.


Optics Express | 2015

Full loss compensation in hybrid plasmonic waveguides under electrical pumping

Dmitry Svintsov; Aleksey V. Arsenin; Dmitry Yu. Fedyanin

Surface plasmon polaritons (SPPs) give an opportunity to break the diffraction limit and design nanoscale optical components, however their practical implementation is hindered by high ohmic losses in a metal. Here, we propose a novel approach for efficient SPP amplification under electrical pumping in a deep-subwavelength metal-insulator-semiconductor waveguiding geometry and numerically demonstrate full compensation for the SPP propagation losses in the infrared at an exceptionally low pump current density of 0.8 kA/cm2. This value is an order of magnitude lower than in the previous studies owing to the thin insulator layer between a metal and a semiconductor, which allows injection of minority carriers and blocks majority carriers reducing the leakage current to nearly zero. The presented results provide insight into lossless SPP guiding and development of future high dense nanophotonic and optoelectronic circuits.


Applied Physics Express | 2011

Detection of Modulated Terahertz Radiation Using Combined Plasma and Mechanical Resonances in Double-Carbon-Nanotube Device

Yury V. Stebunov; V. G. Leiman; Aleksey V. Arsenin; A. D. Gladun; Viacheslav Semenenko; Victor Ryzhii

We propose a resonant detector of terahertz radiation modulated by megahertz or gigahertz signals. The detector is based on mechanically floating carbon nanotubes (CNTs), suspended over an insulator. The device operation is associated with the excitation of both plasma and mechanical oscillations in CNTs resulting in an ac displacement current between them. This current plays the role of the detector output signal. Using the proposed device model, we find that the frequency dependence of the detector responsivity exhibits a sharp peak at the combined plasma-mechanical resonance and estimate its maximum value.


THE THIRD INTERNATIONAL WORKSHOP ON THEORETICAL AND COMPUTATIONAL NANO-PHOTONICS (TACONA-PHOTONICS 2010) | 2010

Semiconductor Surface Plasmon Amplifier Based on a Schottky Barrier Diode

Dmitry Yu. Fedyanin; Aleksey V. Arsenin

We propose a novel scheme of the semiconductor surface plasmon amplifier. It is based on a minority carrier injection in a metal‐insulator‐semiconductor diode. The principle of operation is as follows. Excess electrons and holes recombine radiatively and emit photons. If the difference between quasi‐Fermi levels exceeds the bandgap, the surface plasmon plasmon polariton (SPP) is amplified. A compact size and a planar structure of the amplifier allow to utilize it in integrated optical circuits and couple it easily to passive plasmonic devices. Moreover, the proposed technique can be used to obtain sufrace plasmon lasing by analogy with semiconductor lasers.


Journal of Communications Technology and Electronics | 2009

Parametric instability in a nanoelectromechanical detector of modulated terahertz radiation on the basis of a high electron mobility transistor with a mobile elastic gate

Aleksey V. Arsenin; A. D. Gladun; V. G. Leiman; V. L. Semenenko; Victor Ryzhii

Parametric instability in a modulated terahertz radiation detector based on a high electron mobility transistor with a mobile elastic gate fabricated from a conductor in the form of a micronanocantilever is studied in detail. The analysis is based on the method of coupled oscillations and subsequent testing by direct numerical integration of the original equations. The thresholds and increments of the instability are determined. The feasibility of practical realization of conditions for parametric instability in such detectors is discussed.

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V. G. Leiman

Moscow Institute of Physics and Technology

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Dmitry Yu. Fedyanin

Moscow Institute of Physics and Technology

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A. D. Gladun

Moscow Institute of Physics and Technology

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V. L. Semenenko

Moscow Institute of Physics and Technology

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Yury V. Stebunov

Moscow Institute of Physics and Technology

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Valentyn S. Volkov

University of Southern Denmark

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D. Yu. Fedyanin

Moscow Institute of Physics and Technology

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Dmitry I. Yakubovsky

Moscow Institute of Physics and Technology

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Anatolii D. Gladun

Moscow Institute of Physics and Technology

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