Alex Mak

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international solid-state circuits conference | 2008

Kazushige Kanda; Masaru Koyanagi; Toshio Yamamura; Koji Hosono; Masahiro Yoshihara; Toru Miwa; Yosuke Kato; Alex Mak; Siu Lung Chan; Frank Tsai; Raul Adrian Cernea; Binh Le; Eiichi Makino; Takashi Taira; Hiroyuki Otake; Norifumi Kajimura; Susumu Fujimura; Yoshiaki Takeuchi; Mikihiko Itoh; Masanobu Shirakawa; Dai Nakamura; Yuya Suzuki; Yuki Okukawa; Masatsugu Kojima; Kazuhide Yoneya; Takamichi Arizono; Toshiki Hisada; Shinji Miyamoto; Mitsuhiro Noguchi; Toshitake Yaegashi

NAND flash memory use in digital still cameras and cellular phones is driving demand for larger-capacity storage. Moreover, NAND flash has the potential to replace HDDs. To achieve larger capacity while maintaining low cost per bit, technical improvements in feature size and area reduction are essential. To meet the stringent requirements, we develop a 16 Gb 4-level NAND flash memory in 43 nm CMOS technology. In 43 nm generation, gate-induced drain leakage (GIDL) influences the electrical field on both sides of NAND strings. GIDL causes severe program disturb problems to NAND flash memories. To avoid GIDL, two dummy wordlines (WL) on both sides of NAND strings are added. This is effective because the dummy gate voltages, are selected independent of the program inhibit voltage.

international solid-state circuits conference | 2009

Takuya Futatsuyama; Norihiro Fujita; Naoya Tokiwa; Yoshihiko Shindo; Toshiaki Edahiro; Teruhiko Kamei; Hiroaki Nasu; Makoto Iwai; Koji Kato; Yasuyuki Fukuda; Naoaki Kanagawa; Naofumi Abiko; Masahide Matsumoto; Toshihiko Himeno; Toshifumi Hashimoto; Yi-Ching Liu; Hardwell Chibvongodze; Takamitsu Hori; Manabu Sakai; Hong Ding; Yoshiharu Takeuchi; Hitoshi Shiga; Norifumi Kajimura; Yasuyuki Kajitani; Kiyofumi Sakurai; Kosuke Yanagidaira; Toshihiro Suzuki; Yuko Namiki; Tomofumi Fujimura; Man Mui

NAND flash memories are used in digital still cameras, cellular phones, MP3 players and various memory cards. As seen in the growing needs for applications such as solid-state drives and video camcoders, the market demands for larger-capacity storage has continuously increased and NAND Flash memories are enabling a wide range of new applications. In such situations, to achieve larger capacity at low cost per bit, technical improvement in feature-size scaling [1], multi-bit per cell [2,3] and area reduction are essential.

international solid-state circuits conference | 2011

Koichi Fukuda; Yoshihisa Watanabe; Eiichi Makino; Koichi Kawakami; Jumpei Sato; Teruo Takagiwa; Naoaki Kanagawa; Hitoshi Shiga; Naoya Tokiwa; Yoshihiko Shindo; Toshiaki Edahiro; Takeshi Ogawa; Makoto Iwai; Osamu Nagao; Junji Musha; Takatoshi Minamoto; Kosuke Yanagidaira; Yuya Suzuki; Dai Nakamura; Yoshikazu Hosomura; Yuka Furuta; Mai Muramoto; Rieko Tanaka; Go Shikata; Ayako Yuminaka; Kiyofumi Sakurai; Manabu Sakai; Hong Ding; Mitsuyuki Watanabe; Yosuke Kato

NAND flash memories are now indispensable for our modern lives. The application range of the storage memory devices began with digital still cameras and has been extended to USB memories, memory cards, MP3 players, cell phones including smart phones, netbooks, and so on. This is because higher storage capacity and lower cost are realized through means of technology scaling every year. Emerging markets, such as solid-state drives (SSDs) and data-storage servers, require lower bit cost, higher program and read throughputs, and lower power consumption

Archive | 2011