Alexander A. Balandin

Superior Thermal Conductivity of Single-Layer Graphene

We report the measurement of the thermal conductivity of a suspended single-layer graphene. The room temperature values of the thermal conductivity in the range approximately (4.84+/-0.44)x10(3) to (5.30+/-0.48)x10(3) W/mK were extracted for a single-layer graphene from the dependence of the Raman G peak frequency on the excitation laser power and independently measured G peak temperature coefficient. The extremely high value of the thermal conductivity suggests that graphene can outperform carbon nanotubes in heat conduction. The superb thermal conduction property of graphene is beneficial for the proposed electronic applications and establishes graphene as an excellent material for thermal management.

Thermal properties of graphene and nanostructured carbon materials

Recent years have seen a rapid growth of interest by the scientific and engineering communities in the thermal properties of materials. Heat removal has become a crucial issue for continuing progress in the electronic industry, and thermal conduction in low-dimensional structures has revealed truly intriguing features. Carbon allotropes and their derivatives occupy a unique place in terms of their ability to conduct heat. The room-temperature thermal conductivity of carbon materials span an extraordinary large range--of over five orders of magnitude--from the lowest in amorphous carbons to the highest in graphene and carbon nanotubes. Here, I review the thermal properties of carbon materials focusing on recent results for graphene, carbon nanotubes and nanostructured carbon materials with different degrees of disorder. Special attention is given to the unusual size dependence of heat conduction in two-dimensional crystals and, specifically, in graphene. I also describe the prospects of applications of graphene and carbon materials for thermal management of electronics.

Extremely high thermal conductivity of graphene: Prospects for thermal management applications in nanoelectronic circuits

The authors reported on investigation of the thermal conductivity of graphene suspended across trenches in Si∕SiO2 wafer. The measurements were performed using a noncontact technique based on micro-Raman spectroscopy. The amount of power dissipated in graphene and corresponding temperature rise were determined from the spectral position and integrated intensity of graphene’s G mode. The extremely high thermal conductivity in the range of ∼3080–5150W∕mK and phonon mean free path of ∼775nm near room temperature were extracted for a set of graphene flakes. The obtained results suggest graphene’s applications as thermal management material in future nanoelectronic circuits.

Dimensional crossover of thermal transport in few-layer graphene

Graphene, in addition to its unique electronic and optical properties, reveals unusually high thermal conductivity. The fact that the thermal conductivity of large enough graphene sheets should be higher than that of basal planes of bulk graphite was predicted theoretically by Klemens. However, the exact mechanisms behind the drastic alteration of a materials intrinsic ability to conduct heat as its dimensionality changes from two to three dimensions remain elusive. The recent availability of high-quality few-layer graphene (FLG) materials allowed us to study dimensional crossover experimentally. Here we show that the room-temperature thermal conductivity changes from approximately 2,800 to approximately 1,300 W m(-1) K(-1) as the number of atomic planes in FLG increases from 2 to 4. We explained the observed evolution from two dimensions to bulk by the cross-plane coupling of the low-energy phonons and changes in the phonon Umklapp scattering. The obtained results shed light on heat conduction in low-dimensional materials and may open up FLG applications in thermal management of nanoelectronics.

Phonon heat conduction in a semiconductor nanowire

A model for phonon heat conduction in a semiconductor nanowire with dimensions comparable to the phonon mean free path is developed. It is based on the solution of Boltzmann’s equation, which takes into account (i) modification of the acoustic phonon dispersion due to spatial confinement, and (ii) change in the nonequilibrium phonon distribution due to partially diffuse boundary scattering. Numerical simulation is performed for a silicon nanowire with boundaries characterized by different interface roughness. Phonon confinement and boundary scattering lead to a significant decrease of the lattice thermal conductivity. The value of this decrease and its interface roughness and temperature dependence are different from the predictions of the early models. The observed change in thermal resistance has to be taken into account in simulation of deep-submicron and nanometer-scale devices.

Electron-spin-resonance transistors for quantum computing in silicon-germanium heterostructures

We apply the full power of modern electronic band-structure engineering and epitaxial heterostructures to design a transistor that can sense and control a single-donor electron spin. Spin-resonance transistors may form the technological basis for quantum information processing. One- and two-qubit operations are performed by applying a gate bias. The bias electric field pulls the electron wave function away from the dopant ion into layers of different alloy composition. Owing to the variation of the g factor (Si: g1.998,Ge:g1.563), this displacement changes the spin Zeeman energy, allowing single-qubit operations. By displacing the electron even further, the overlap with neighboring qubits is affected, which allows two-qubit operations. Certain silicon-germanium alloys allow a qubit spacing as large as 200 nm, which is well within the capabilities of current lithographic techniques. We discuss manufacturing limitations and issues regarding scaling up to a large size computer.

Thermal conductivity of isotopically modified graphene

In addition to its exotic electronic properties graphene exhibits unusually high intrinsic thermal conductivity. The physics of phonons - the main heat carriers in graphene - was shown to be substantially different in two-dimensional (2D) crystals, such as graphene, than in three-dimensional (3D) graphite. Here, we report our experimental study of the isotope effects on the thermal properties of graphene. Isotopically modified graphene containing various percentages of 13C were synthesized by chemical vapor deposition (CVD). The regions of different isotopic composition were parts of the same graphene sheet to ensure uniformity in material parameters. The thermal conductivity, K, of isotopically pure 12C (0.01% 13C) graphene determined by the optothermal Raman technique, was higher than 4000 W/mK at the measured temperature Tm~320 K, and more than a factor of two higher than the value of K in a graphene sheets composed of a 50%-50% mixture of 12C and 13C. The experimental data agree well with our molecular dynamics (MD) simulations, corrected for the long-wavelength phonon contributions via the Klemens model. The experimental results are expected to stimulate further studies aimed at better understanding of thermal phenomena in 2D crystals.In addition to its exotic electronic properties graphene exhibits unusually high intrinsic thermal conductivity. The physics of phonons--the main heat carriers in graphene--has been shown to be substantially different in two-dimensional (2D) crystals, such as graphene, from in three-dimensional (3D) graphite. Here, we report our experimental study of the isotope effects on the thermal properties of graphene. Isotopically modified graphene containing various percentages of 13C were synthesized by chemical vapour deposition (CVD). The regions of different isotopic compositions were parts of the same graphene sheet to ensure uniformity in material parameters. The thermal conductivity, K, of isotopically pure 12C (0.01% 13C) graphene determined by the optothermal Raman technique, was higher than 4,000 W mK(-1) at the measured temperature T(m)~320 K, and more than a factor of two higher than the value of K in graphene sheets composed of a 50:50 mixture of 12C and 13C. The experimental data agree well with our molecular dynamics (MD) simulations, corrected for the long-wavelength phonon contributions by means of the Klemens model. The experimental results are expected to stimulate further studies aimed at a better understanding of thermal phenomena in 2D crystals.

Micro-Raman investigation of optical phonons in ZnO nanocrystals

We have measured nonresonant and resonant Raman-scattering spectra from ZnO nanocrystals with an average diameter of 20nm. Based on our experimental data and comparison with the recently developed theory, we show that the observed shifts of the polar optical-phonon peaks in the resonant Raman spectra are not related to the spatial phonon confinement. The very weak dispersion of the polar optical phonons in ZnO nanocrystals does not lead to any noticeable redshift of the phonon peaks for 20-nm nanocrystals. The observed phonon shifts have been attributed to the local heating effects. We have demonstrated that even the low-power ultraviolet laser excitation, required for the resonant Raman spectroscopy, can lead to the strong local heating of ZnO nanocrystals. The latter causes significant (up to 14cm−1) redshift of the optical-phonon peaks compared to their position in bulk crystals. Nonresonant Raman excitation does not produce noticeable local heating. The obtained results can be used for identification ...

Two-dimensional phonon transport in graphene

Properties of phonons-quanta of the crystal lattice vibrations-in graphene have recently attracted significant attention from the physics and engineering communities. Acoustic phonons are the main heat carriers in graphene near room temperature, while optical phonons are used for counting the number of atomic planes in Raman experiments with few-layer graphene. It was shown both theoretically and experimentally that transport properties of phonons, i.e. energy dispersion and scattering rates, are substantially different in a quasi-two-dimensional system such as graphene compared to the basal planes in graphite or three-dimensional bulk crystals. The unique nature of two-dimensional phonon transport translates into unusual heat conduction in graphene and related materials. In this review, we outline different theoretical approaches developed for phonon transport in graphene, discuss contributions of the in-plane and cross-plane phonon modes, and provide comparison with available experimental thermal conductivity data. Particular attention is given to analysis of recent results for the phonon thermal conductivity of single-layer graphene and few-layer graphene, and the effects of the strain, defects, and isotopes on phonon transport in these systems.

Modification of Graphene Properties due to Electron-Beam Irradiation

The authors report micro-Raman investigation of changes in the single and bilayer graphene crystal lattice induced by the low and medium energy electron-beam irradiation (5–20 keV). It was found that the radiation exposures result in the appearance of the strong disorder D band around 1345 cm−1, indicating damage to the lattice. The D and G peak evolution with increasing radiation dose follows the amorphization trajectory, which suggests graphene’s transformation to the nanocrystalline and then to amorphous form. The results have important implications for graphene characterization and device fabrication, which rely on the electron microscopy and focused ion beam processing.