Alexander Dobrovolsky

Energy Upconversion in GaP/GaNP Core/Shell Nanowires for Enhanced Near-Infrared Light Harvesting

Semiconductor nanowires (NWs) have recently gained increasing interest due to their great potential for photovoltaics. A novel material system based on GaNP NWs is considered to be highly suitable for applications in efficient multi-junction and intermediate band solar cells. This work shows that though the bandgap energies of GaN(x)P(1-x) alloys lie within the visible spectral range (i.e., within 540-650 nm for the currently achievable x < 3%), coaxial GaNP NWs grown on Si substrates can also harvest infrared light utilizing energy upconversion. This energy upconversion can be monitored via anti-Stokes near-band-edge photoluminescence (PL) from GaNP, visible even from a single NW. The dominant process responsible for this effect is identified as being due to two-step two-photon absorption (TS-TPA) via a deep level lying at about 1.28 eV above the valence band, based on the measured dependences of the anti-Stokes PL on excitation power and wavelength. The formation of the defect participating in the TS-TPA process is concluded to be promoted by nitrogen incorporation. The revealed defect-mediated TS-TPA process can boost efficiency of harvesting solar energy in GaNP NWs, beneficial for applications of this novel material system in third-generation photovoltaic devices.

Exploring the Electronic Band Structure of Organometal Halide Perovskite via Photoluminescence Anisotropy of Individual Nanocrystals

Understanding electronic processes in organometal halide perovskites, flourishing photovoltaic, and emitting materials requires unraveling the origin of their electronic transitions. Light polarization studies can provide important information regarding transition dipole moment orientations. Investigating individual methylammonium lead triiodide perovskite nanocrystals enabled us to detect the polarization of photoluminescence intensity and photoluminescence excitation, hidden in bulk samples by ensemble averaging. Polarization properties of the crystals were correlated with their photoluminescence spectra and electron microscopy images. We propose that distortion of PbI6 octahedra leads to peculiarities of the electronic band structure close to the band-edge. Namely, the lowest band transition possesses a transition dipole moment along the apical Pb-I-Pb bond resulting in polarized photoluminescence. Excitation of photoluminescence above the bandgap is unpolarized because it involves molecular orbitals delocalized both in the apical and equatorial directions of the perovskite octahedron. Trap-assisted emission at 77 K, rather surprisingly, was polarized similar to the bandgap emission.

Optimizing GaNP coaxial nanowires for efficient light emission by controlling formation of surface and interfacial defects.

We report on identification and control of important nonradiative recombination centers in GaNP coaxial nanowires (NWs) grown on Si substrates in an effort to significantly increase light emitting efficiency of these novel nanostructures promising for a wide variety of optoelectronic and photonic applications. A point defect complex, labeled as DD1 and consisting of a P atom with a neighboring partner aligned along a crystallographic ⟨ 111 ⟩ axis, is identified by optically detected magnetic resonance as a dominant nonradiative recombination center that resides mainly on the surface of the NWs and partly at the heterointerfaces. The formation of DD1 is found to be promoted by the presence of nitrogen and can be suppressed by reducing the strain between the core and shell layers, as well as by protecting the optically active shell by an outer passivating shell. Growth modes employed during the NW growth are shown to play a role. On the basis of these results, we identify the GaP/GaN(y)P(1-y)/GaN(x)P(1-x) (x < y) core/shell/shell NW structure, where the GaN(y)P(1-y) inner shell with the highest nitrogen content serves as an active light-emitting layer, as the optimized and promising design for efficient light emitters based on GaNP NWs.

Effects of Polytypism on Optical Properties and Band Structure of Individual Ga(N)P Nanowires from Correlative Spatially Resolved Structural and Optical Studies

III-V semiconductor nanowires (NWs) have gained significant interest as building blocks in novel nanoscale devices. The one-dimensional (1D) nanostructure architecture allows one to extend band structure engineering beyond quantum confinement effects by utilizing formation of different crystal phases that are thermodynamically unfavorable in bulk materials. It is therefore of crucial importance to understand the influence of variations in the NWs crystal structure on their fundamental physical properties. In this work we investigate effects of structural polytypism on the optical properties of gallium phosphide and GaP/GaNP core/shell NW structures by a correlative investigation on the structural and optical properties of individual NWs. The former is monitored by transmission electron microscopy, whereas the latter is studied via cathodoluminescence (CL) mapping. It is found that structural defects, such as rotational twins in zinc blende (ZB) GaNP, have detrimental effects on light emission intensity at low temperatures by promoting nonradiative recombination processes. On the other hand, formation of the wurtzite (WZ) phase does not notably affect the CL intensity neither in GaP nor in the GaNP alloy. This suggests that zone folding in WZ GaP does not enhance its radiative efficiency, consistent with theoretical predictions. We also show that the change in the lattice structure have negligible effects on the bandgap energies of the GaNP alloys, at least within the range of the investigated nitrogen compositions of <2%. Both WZ and ZB GaNP are found to have a significantly higher efficiency of radiative recombination as compared with that in parental GaP, promising for potential applications of GaNP NWs as efficient nanoscale light emitters within the desirable amber-red spectral range.

Defect-induced local variation of crystal phase transition temperature in metal-halide perovskites

Solution-processed organometal halide perovskites are hybrid crystalline semiconductors highly interesting for low-cost and efficient optoelectronics. Their properties are dependent on the crystal structure. Literature shows a variety of crystal phase transition temperatures and often a spread of the transition over tens of degrees Kelvin. We explain this inconsistency by demonstrating that the temperature of the tetragonal-to-orthorhombic phase transition in methylammonium lead triiodide depends on the concentration and nature of local defects. Phase transition in individual nanowires was studied by photoluminescence microspectroscopy and super-resolution imaging. We propose that upon cooling from 160 to 140 K, domains of the crystal containing fewer defects stay in the tetragonal phase longer than highly defected domains that readily transform to the high bandgap orthorhombic phase at higher temperatures. The existence of relatively pure tetragonal domains during the phase transition leads to drastic photoluminescence enhancement, which is inhomogeneously distributed across perovskite microcrystals.Understanding crystal phase transition in materials is of fundamental importance. Using luminescence spectroscopy and super-resolution imaging, Dobrovolsky et al. study the transition from the tetragonal to orthorhombic crystal phase in methylammonium lead triiodide nanowires at low temperature.

Optical properties of GaP/GaNP core/shell nanowires: a temperature-dependent study

Recombination processes in GaP/GaNP core/shell nanowires (NWs) grown on Si are studied by employing temperature-dependent continuous wave and time-resolved photoluminescence (PL) spectroscopies. The NWs exhibit bright PL emissions due to radiative carrier recombination in the GaNP shell. Though the radiative efficiency of the NWs is found to decrease with increasing temperature, the PL emission remains intense even at room temperature. Two thermal quenching processes of the PL emission are found to be responsible for the degradation of the PL intensity at elevated temperatures: (a) thermal activation of the localized excitons from the N-related localized states and (b) activation of a competing non-radiative recombination (NRR) process. The activation energy of the latter process is determined as being around 180 meV. NRR is also found to cause a significant decrease of carrier lifetime.

Fabry–Perot Microcavity Modes in Single GaP/GaNP Core/Shell Nanowires

Semiconductor nanowires (NWs) are attracting increasing interest as nanobuilding blocks for optoelectronics and photonics. A novel material system that is highly suitable for these applications are GaNP NWs. In this article, we show that individual GaP/GaNP core/shell nanowires (NWs) grown by molecular beam epitaxy on Si substrates can act as Fabry-Perot (FP) microcavities. This conclusion is based on results of microphotoluminescence (μ-PL) measurements performed on individual NWs, which reveal periodic undulations of the PL intensity that follow an expected pattern of FP cavity modes. The cavity is concluded to be formed along the NW axis with the end facets acting as reflecting mirrors. The formation of the FP modes is shown to be facilitated by an increasing index contrast with the surrounding media. Spectral dependence of the group refractive index is also determined for the studied NWs. The observation of the FP microcavity modes in the GaP/GaNP core/shell NWs can be considered as a first step toward achieving lasing in this quasidirect bandgap semiconductor in the NW geometry.