Alexander L. Shluger

Metal oxide resistive memory switching mechanism based on conductive filament properties

By combining electrical, physical, and transport/atomistic modeling results, this study identifies critical conductive filament (CF) features controlling TiN/HfO2/TiN resistive memory (RRAM) operations. The leakage current through the dielectric is found to be supported by the oxygen vacancies, which tend to segregate at hafnia grain boundaries. We simulate the evolution of a current path during the forming operation employing the multiphonon trap-assisted tunneling (TAT) electron transport model. The forming process is analyzed within the concept of dielectric breakdown, which exhibits much shorter characteristic times than the electroforming process conventionally employed to describe the formation of the conductive filament. The resulting conductive filament is calculated to produce a non-uniform temperature profile along its length during the reset operation, promoting preferential oxidation of the filament tip. A thin dielectric barrier resulting from the CF tip oxidation is found to control filament resistance in the high resistive state. Field-driven dielectric breakdown of this barrier during the set operation restores the filament to its initial low resistive state. These findings point to the critical importance of controlling the filament cross section during forming to achieve low power RRAM cell switching.

Relative energies of surface and defect states: ab initio calculations for the MgO(001) surface

We present the results of calculations of the energy levels of defects at the (001) surface of MgO relative to the top of the valence band and values of defect ionisation potentials and electron affinities. The calculations were made using an embedded cluster method in which a cluster of several tens of ions treated quantum mechanically is embedded in a finite array of polarisable and point ions modelling the crystalline potential and the classical polarisation of the host lattice. The calculated ionisation potential of the ideal surface, which fixes the position of the top of the valence band with respect to the vacuum level, is about 6.7 eV. This value is used as a reference for positioning the energy levels of three charge states of a surface anion vacancy, which are also calculated as ionisation energies with respect to the vacuum level. The surface and vacancy electron affinities are calculated using the same method. As a prototype low-coordinated surface site, we have considered a cube corner. Our calculations predict the splitting of the corner states from the top of the surface valence band by about 1.0 eV. Both unrelaxed and relaxed holes are strongly localised at the corner oxygen ion. The ionisation energies and electron affinities of the corner anion vacancy are calculated. The electrons in the F and F+ centres at the corner are shown to be significantly delocalised over surrounding Mg ions

Negative oxygen vacancies in HfO2 as charge traps in high-k stacks

The optical excitation and thermal ionization energies of oxygen vacancies in m-HfO2 are calculated using a non-local density functional theory with atomic basis sets and periodic supercell. The thermal ionization energies of negatively charged V- and V2- centers are consistent with values obtained by the electrical measurements. The results suggest that negative oxygen vacancies are essentially polaronic in origin. They are likely candidates for intrinsic shallow electron traps in the hafnium based gate stack devices. (c) 2006 American Institute of Physics.

Crystallographic phase transition and high-Tc superconductivity in LaFeAsO: F

Undoped LaFeAsO, the parent compound of the newly found high-Tc superconductor, exhibits a sharp decrease in the temperature-dependent resistivity at ~160?K. The anomaly can be suppressed by F doping with simultaneous appearance of superconductivity appears correspondingly, suggesting a close association of the anomaly with the superconductivity. We examined the crystal structures, magnetic properties and conductivity of undoped (normal conductor) and 14?at.% F-doped LaFeAsO (Tc = 20?K) by synchrotron x-ray diffraction (XRD), DC magnetic measurements, and ab?initio calculations demonstrated that the anomaly is associated with a phase transition from tetragonal (P4/nmm) to orthorhombic (Cmma) phases at ~160?K as well as an antiferromagnetic spin ordering transition at ~140?K. These transitions can be explained by spin configuration-dependent potential energy surfaces derived from the ab?initio calculations. The suppression of the transitions is ascribed to interrelated effects of geometric and electronic structural changes due to doping by F? ions.

The interaction of oxygen vacancies with grain boundaries in monoclinic HfO2

The diffusion and segregation of oxygen vacancies near a grain boundary in m-HfO2 is investigated by first principles calculations. We find that both neutral and positive vacancies segregate to the grain boundary. Positive vacancies, which are mobile in the bulk with activation energies for diffusion ∼0.7 eV, have enhanced mobility parallel to the boundary plane but once at the boundary face high barriers to climb out.

Atom-resolved imaging of ordered defect superstructures at individual grain boundaries

The ability to resolve spatially and identify chemically atoms in defects would greatly advance our understanding of the correlation between structure and property in materials. This is particularly important in polycrystalline materials, in which the grain boundaries have profound implications for the properties and applications of the final material. However, such atomic resolution is still extremely difficult to achieve, partly because grain boundaries are effective sinks for atomic defects and impurities, which may drive structural transformation of grain boundaries and consequently modify material properties. Regardless of the origin of these sinks, the interplay between defects and grain boundaries complicates our efforts to pinpoint the exact sites and chemistries of the entities present in the defective regions, thereby limiting our understanding of how specific defects mediate property changes. Here we show that the combination of advanced electron microscopy, spectroscopy and first-principles calculations can provide three-dimensional images of complex, multicomponent grain boundaries with both atomic resolution and chemical sensitivity. The high resolution of these techniques allows us to demonstrate that even for magnesium oxide, which has a simple rock-salt structure, grain boundaries can accommodate complex ordered defect superstructures that induce significant electron trapping in the bandgap of the oxide. These results offer insights into interactions between defects and grain boundaries in ceramics and demonstrate that atomic-scale analysis of complex multicomponent structures in materials is now becoming possible.

Recent Trends in Surface Characterization and Chemistry with High‐Resolution Scanning Force Methods

The current status and future prospects of non-contact atomic force microscopy (nc-AFM) and Kelvin probe force microscopy (KPFM) for studying insulating surfaces and thin insulating films in high resolution are discussed. The rapid development of these techniques and their use in combination with other scanning probe microscopy methods over the last few years has made them increasingly relevant for studying, controlling, and functionalizing the surfaces of many key materials. After introducing the instruments and the basic terminology associated with them, state-of-the-art experimental and theoretical studies of insulating surfaces and thin films are discussed, with specific focus on defects, atomic and molecular adsorbates, doping, and metallic nanoclusters. The latest achievements in atomic site-specific force spectroscopy and the identification of defects by crystal doping, work function, and surface charge imaging are reviewed and recent progress being made in high-resolution imaging in air and liquids is detailed. Finally, some of the key challenges for the future development of the considered fields are identified.

The role of nitrogen-related defects in high-k dielectric oxides: Density-functional studies

Using ab initio density-functional total energy and molecular-dynamics simulations, we study the effects of various forms of nitrogen postdeposition anneal (PDA) on the electric properties of hafnia in the context of its application as a gate dielectric in field-effect transistors. We consider the atomic structure and energetics of nitrogen-containing defects which can be formed during PDA in various N-based ambients: N2, N2+, N, NH3, NO, and N2O. We analyze the role of such defects in fixed charge accumulation, electron trapping, and in the growth of the interface SiO2 layer. We find that nitrogen anneal of the oxides leads to an effective immobilization of native defects such as oxygen vacancies and interstitial oxygen ions, which may inhibit the growth of a silica layer. However, nitrogen in any form is unlikely to significantly reduce the fixed charge in the dielectric.

Trapping, self-trapping and the polaron family

The earliest ideas of the polaron recognized that the coupling of an electron to ionic vibrations would affect its apparent mass and could effectively immobilize the carrier (self-trapping). We discuss how these basic ideas have been generalized to recognize new materials and new phenomena. First, there is an interplay between self-trapping and trapping associated with defects or with fluctuations in an amorphous solid. In high dielectric constant oxides, like HfO2, this leads to oxygen vacancies having as many as five charge states. In colossal magnetoresistance manganites, this interplay makes possible the scanning tunnelling microscopy ( STM) observation of polarons. Second, excitons can self-trap and, by doing so, localize energy in ways that can modify the material properties. Third, new materials introduce new features, with polaron-related ideas emerging for uranium dioxide, gate dielectric oxides, Jahn-Teller systems, semiconducting polymers and biological systems. The phonon modes that initiate self-trapping can be quite different from the longitudinal optic modes usually assumed to dominate. Fourth, there are new phenomena, like possible magnetism in simple oxides, or with the evolution of short-lived polarons, like muons or excitons. The central idea remains that of a particle whose properties are modified by polarizing or deforming its host solid, sometimes profoundly. However, some of the simpler standard assumptions can give a limited, indeed misleading, description of real systems, with qualitative inconsistencies. We discuss representative cases for which theory and experiment can be compared in detail.

Study of the surface electronic structure of MgO bulk crystals and thin films

The electronic structures of the surfaces of MgO single crystals, oxidized Mg polycrystals and oxidized Mg films grown by molecular beam epitaxy on Si(100) surfaces were studied using several techniques. These include metastable impact electron spectroscopy (MIES), ultraviolet photoelectron spectroscopy (UPS (He I)), and X-ray photoelectron spectroscopy (XPS). Spectra of oxidized Mg layers on Si(100) show additional features to those obtained for cleaved MgO crystals. These spectral features are attributed to dissociative adsorption of oxygen at bulk oxygen sites. Weak heating of the oxidized Mg layers removes these features and the electronic spectra for all three studied systems become similar. However, the experimental MIES and UPS spectra, both arising mainly from the ionization of the O 2p orbitals, have different structures. They are interpreted on the basis of ab initio Hartree-Fock and density functional calculations of the electronic structures of the ideal MgO(100) surface. It is shown, that the differences in the spectra can be understood by taking into account that UPS spectra reflect the density of electronic states within several surface layers, whereas MIES probes the surface states which are the most extended into the vacuum.