Alexei Kalaboukhov

Towards a quantum resistance standard based on epitaxial graphene.

The quantum Hall effect allows the international standard for resistance to be defined in terms of the electron charge and Plancks constant alone. The effect comprises the quantization of the Hall resistance in two-dimensional electron systems in rational fractions of R(K) = h/e(2) = 25,812.807557(18) Omega, the resistance quantum. Despite 30 years of research into the quantum Hall effect, the level of precision necessary for metrology--a few parts per billion--has been achieved only in silicon and iii-v heterostructure devices. Graphene should, in principle, be an ideal material for a quantum resistance standard, because it is inherently two-dimensional and its discrete electron energy levels in a magnetic field (the Landau levels) are widely spaced. However, the precisions demonstrated so far have been lower than one part per million. Here, we report a quantum Hall resistance quantization accuracy of three parts per billion in monolayer epitaxial graphene at 300 mK, four orders of magnitude better than previously reported. Moreover, by demonstrating the structural integrity and uniformity of graphene over hundreds of micrometres, as well as reproducible mobility and carrier concentrations across a half-centimetre wafer, these results boost the prospects of using epitaxial graphene in applications beyond quantum metrology.We report the first observation of the quantum Hall effect in epitaxial graphene. The result described in the submitted manuscript fills the yawning gap in the understanding of the electronic properties of this truly remarkable material and demonstrate suitability of the silicon carbide technology for manufactiring large area high quality graphene. Having found the quantum Hall effect in several devices produced on distant parts of a single large-area wafer, we can confirm that material synthesized on the Si-terminated face of SiC promises a suitable platform for the implementations of quantum resistance metrology at elevated temperatures and, in the longer term, opens bright prospects for scalable electronics based on graphene.

SiC Graphene Suitable For Quantum Hall Resistance Metrology

The quantum Hall effect allows the international standard for resistance to be defined in terms of the electron charge and Plancks constant alone. The effect comprises the quantization of the Hall resistance in two-dimensional electron systems in rational fractions of R(K) = h/e(2) = 25,812.807557(18) Omega, the resistance quantum. Despite 30 years of research into the quantum Hall effect, the level of precision necessary for metrology--a few parts per billion--has been achieved only in silicon and iii-v heterostructure devices. Graphene should, in principle, be an ideal material for a quantum resistance standard, because it is inherently two-dimensional and its discrete electron energy levels in a magnetic field (the Landau levels) are widely spaced. However, the precisions demonstrated so far have been lower than one part per million. Here, we report a quantum Hall resistance quantization accuracy of three parts per billion in monolayer epitaxial graphene at 300 mK, four orders of magnitude better than previously reported. Moreover, by demonstrating the structural integrity and uniformity of graphene over hundreds of micrometres, as well as reproducible mobility and carrier concentrations across a half-centimetre wafer, these results boost the prospects of using epitaxial graphene in applications beyond quantum metrology.We report the first observation of the quantum Hall effect in epitaxial graphene. The result described in the submitted manuscript fills the yawning gap in the understanding of the electronic properties of this truly remarkable material and demonstrate suitability of the silicon carbide technology for manufactiring large area high quality graphene. Having found the quantum Hall effect in several devices produced on distant parts of a single large-area wafer, we can confirm that material synthesized on the Si-terminated face of SiC promises a suitable platform for the implementations of quantum resistance metrology at elevated temperatures and, in the longer term, opens bright prospects for scalable electronics based on graphene.

Evidence for spin-triplet superconducting correlations in metal-oxide heterostructures with noncollinear magnetization

Heterostructures composed of ferromagnetic La0.7Sr0.3MnO3, ferromagnetic SrRuO3, and superconducting YBa2Cu3O6+x were studied experimentally. Structures of composition Au/La0.7Sr0.3MnO3/SrRuO3/YBa2Cu3O6+x were prepared by pulsed laser deposition, and their high quality was confirmed by x-ray diffraction and reflectometry. Anoncollinear magnetic state of the heterostructureswas revealed by means of superconducting quantum interference device magnetometry and polarized neutron reflectometry. We have further observed superconducting currents in mesa structures fabricated by deposition of a second superconducting Nb layer on top of the heterostructure, followed by patterning with photolithography and ion-beam etching. Josephson effects observed in these mesa structures can be explained by the penetration of a triplet component of the superconducting order parameter into the magnetic layers.

Quantum Resistance Standard Based on Epitaxial Graphene

The quantum Hall effect allows the international standard for resistance to be defined in terms of the electron charge and Plancks constant alone. The effect comprises the quantization of the Hall resistance in two-dimensional electron systems in rational fractions of R(K) = h/e(2) = 25,812.807557(18) Omega, the resistance quantum. Despite 30 years of research into the quantum Hall effect, the level of precision necessary for metrology--a few parts per billion--has been achieved only in silicon and iii-v heterostructure devices. Graphene should, in principle, be an ideal material for a quantum resistance standard, because it is inherently two-dimensional and its discrete electron energy levels in a magnetic field (the Landau levels) are widely spaced. However, the precisions demonstrated so far have been lower than one part per million. Here, we report a quantum Hall resistance quantization accuracy of three parts per billion in monolayer epitaxial graphene at 300 mK, four orders of magnitude better than previously reported. Moreover, by demonstrating the structural integrity and uniformity of graphene over hundreds of micrometres, as well as reproducible mobility and carrier concentrations across a half-centimetre wafer, these results boost the prospects of using epitaxial graphene in applications beyond quantum metrology.We report the first observation of the quantum Hall effect in epitaxial graphene. The result described in the submitted manuscript fills the yawning gap in the understanding of the electronic properties of this truly remarkable material and demonstrate suitability of the silicon carbide technology for manufactiring large area high quality graphene. Having found the quantum Hall effect in several devices produced on distant parts of a single large-area wafer, we can confirm that material synthesized on the Si-terminated face of SiC promises a suitable platform for the implementations of quantum resistance metrology at elevated temperatures and, in the longer term, opens bright prospects for scalable electronics based on graphene.

High conductivity of ultrathin nanoribbons of SrRuO 3 on SrTiO 3 probed by infrared spectroscopy

SrRuO3 (SRO) is a perovskite increasingly used in oxide-based electronics both for its intrinsic metallicity, which remains unaltered in thin films and for the ease of deposition on dielectric perovskites like SrTiO3, (STO) to implement SRO/STO microcapacitors and other devices. In order to test the reliability of SRO/STO also as high-current on-chip conductor, when the SRO dimensions are pushed to the nanoscale, here we have measured the electrodynamic properties of arrays of nanoribbons, fabricated by lithography starting from an ultrathin film of SRO deposited on a STO substrate. The nanoribbons are 6 or 4 nm thick, 400, 200 and 100 nm wide and 5 mm long. The measurements have been performed by infrared spectroscopy, a non-contact weakly perturbing technique which also allows one to separately determine the carrier density and their scattering rate or mobility. Far-infrared reflectivity spectra have been analyzed by Rigorous Coupled-Wave Analysis (RCWA) and by an Effective Medium Theory, obtaining consistent results. With the radiation polarized along the nanoribbons, we obtain a carrier density similar to that of a flat film used as reference, which in turn is similar to that of bulk SRO. Moreover, in the nanoribbons the carrier scattering rate is even smaller than in the unpatterned film by about a factor of 2. This shows that the transport properties of SRO deposited on STO remain at least unaltered down to nanometric dimensions, with interesting perspectives for implementing on-chip nano-interconnects in an oxide-based electronics. When excited in the perpendicular direction, the nanoribbons appear instead virtually transparent to the radiation field, as predicted by RCWA.

Author Correction: Induced unconventional superconductivity on the surface states of Bi 2 Te 3 topological insulator

The original version of this Article omitted the following from the Acknowledgements:“This work was partly supported by the Research Council of Norway through its Centres of Excellence funding scheme, project number 262633, QuSpin.”This has now been corrected in both the PDF and HTML versions of the article.

Volume-amplified magnetic bioassay integrated with microfluidic sample handling and high-Tc SQUID magnetic readout

A bioassay based on a high-Tc superconducting quantum interference device (SQUID) reading out functionalized magnetic nanoparticles (fMNPs) in a prototype microfluidic platform is presented. The target molecule recognition is based on volume amplification using padlock-probe-ligation followed by rolling circle amplification (RCA). The MNPs are functionalized with single-stranded oligonucleotides, which give a specific binding of the MNPs to the large RCA coil product, resulting in a large change in the amplitude of the imaginary part of the ac magnetic susceptibility. The RCA products from amplification of synthetic Vibrio cholera target DNA were investigated using our SQUID ac susceptibility system in microfluidic channel with an equivalent sample volume of 3 μl. From extrapolation of the linear dependence of the SQUID signal versus concentration of the RCA coils, it is found that the projected limit of detection for our system is about 1.0 × 105 RCA coils (0.2 × 10−18 mol), which is equivalent to 66 fM in the 3 μl sample volume. This ultra-high magnetic sensitivity and integration with microfluidic sample handling are critical steps towards magnetic bioassays for rapid detection of DNA and RNA targets at the point of care.

Triplet superconductivity in oxide ferromagnetic interlayer of mesa-structure

We present experimental data on Nb-Au/La0.7Sr0.3MnO3/SrRuO3/YBa2Cu3O7-δ mesa- structure with in plane linear size 10÷50 μm. The mesa-structures were patterned from the epitaxial heterostructures fabricated by pulsed laser ablation and magnetron sputtering. Superconducting critical current was observed for mesa-structures with the interlayer thicknesses up to 50 nm. In the mesa-structures with just one, either La0.7Sr0.3MnO3 or SrRuO3 interlayer with a thickness larger than 10 nm no superconducting current was observed. The registered superconducting current for the mesa-structures with a thinner interlayer is attributed to pinholes. Obtained results are discussed in terms of superconducting long-range triplet generation at interfaces of superconductor and a composite ferromagnet consisting of ferromagnetic materials with non-collinear magnetization.