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Dive into the research topics where Alexey V. Sakharov is active.

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Featured researches published by Alexey V. Sakharov.


Proceedings of SPIE | 2016

Correlation between p-GaN growth environment with electrical and optical properties of blue LEDs

Modestas Zulonas; Ilya E. Titkov; Amit Yadav; Ksenia A. Fedorova; Andrei F. Tsatsulnikov; Wsevolod V. Lundin; Alexey V. Sakharov; Thomas J. Slight; Wyn Meredith; Edik U. Rafailov

Two blue (450 nm) light–emitting diodes (LED), which only differ in top p-GaN layer growth conditions, were comparatively investigated. I-V, C-V, TLM, Electroluminescence (EL) and Photoluminescence (PL) techniques were applied to clarify a correlation between MOCVD carrier gas and internal properties. The A-structure grown in the pure N2 environment demonstrated better parameters than the B-structure grown in the N2/H2 (1:1) gas mixture. The mixed growth atmosphere leaded to an increase of sheet resistances of p-GaN layer. EL and PL measurements confirmed the advantage of the pure N2 utilization, and C(VR) measurement pointed the increase of static charge concentration near the p-GaN interface in the B structure.


Proceedings of SPIE | 2016

A device based on the Shack-Hartmann wave front sensor for testing wide aperture optics

Alexander Nikitin; Julia Sheldakova; Alexis V. Kudryashov; Gilles Borsoni; Dmitrii Denisov; Valerii Karasik; Alexey V. Sakharov

In this paper we consider two approaches widely used in testing of wide aperture optics: Fizeau interferometer and Shack-Hartmann wavefront sensor. Fizeau interferometer that is common instrument in optical testing can be transformed to a device using Shack-Hartmann wavefront sensor, the alternative technique to check wide aperture optical components. We call this device Hartmannometer, and compare its features to those of Fizeau interferometer.


Photonic Instrumentation Engineering V | 2018

Comparative analysis of methods and optical-electronic equipment to control the form parameters of spherical mirrors

Alexander Nikitin; Nikolay Baryshnikov; Alexey V. Sakharov; Pavel Romanov; Alexis Kudryashov; Julia Sheldakova; Dmitrii Denisov; Valerii Karasik

In this paper we consider two approaches widely used in testing of spherical optical surfaces: Fizeau interferometer and Shack-Hartmann wavefront sensor. Fizeau interferometer that is widely used in optical testing can be transformed to a device using Shack-Hartmann wavefront sensor, the alternative technique to check spherical optical components. We call this device Hartmannometer, and compare its features to those of Fizeau interferometer.


Proceedings of SPIE | 2015

Hartmannometer versus Fizeau Interferometer: advantages and drawbacks

Alexander Nikitin; Julia Sheldakova; Alexis V. Kudryashov; Dmitrii Denisov; Valerii Karasik; Alexey V. Sakharov

In this paper we consider two approaches widely used in optical testing: Shack-Hartmann wavefront sensor and Fizeau interferometer technique. Fizeau interferometer that is widely used in optical testing can be easily transformed to a device using Shack-Hartmann wavefront sensor, the alternative technique to check optical components. We call this device Hartmannometer, and compare its features to those of Fizeau interferometer.


Proceedings of SPIE | 2014

Internal quantum efficiency and tunable colour temperature in monolithic white InGaN/GaN LED

Ilya E. Titkov; Amit Yadav; Vera L. Zerova; Modestas Zulonas; Andrey F. Tsatsulnikov; Wsevolod V. Lundin; Alexey V. Sakharov; Edik U. Rafailov

Internal Quantum Efficiency (IQE) of two-colour monolithic white light emitting diode (LED) was measured by temperature dependant electro-luminescence (TDEL) and analysed with modified rate equation based on ABC model. External, internal and injection efficiencies of blue and green quantum wells were analysed separately. Monolithic white LED contained one green InGaN QW and two blue QWs being separated by GaN barrier. This paper reports also the tunable behaviour of correlated colour temperature (CCT) in pulsed operation mode and effect of self-heating on device performance.


Journal of Materials Research | 2015

Resonant Bragg structures based on III-nitrides

Andrey S. Bolshakov; Vladimir V. Chaldyshev; W. V. Lundin; Alexey V. Sakharov; Andrey F. Tsatsulnikov; Maria A. Yagovkina; Evgenii E. Zavarin


Semiconductor Science and Technology | 2018

Dependence of leakage current in Ni/Si3N4/n-GaN Schottky diodes on deposition conditions of silicon nitride

Dmitry A Zakheim; W. V. Lundin; Alexey V. Sakharov; Eugene E Zavarin; P. N. Brunkov; Elena Yu. Lundina; Andrey F. Tsatsulnikov; S. Karpov


Archive | 2015

High colour rendering dichromatic monolithic light emitting diode with tuneable colour temperature

Amit Yadav; Ilya E. Titkov; Alexey V. Sakharov; Wsevolod V. Lundin; A. E. Nikolaev; G.S. Sokolovskii; Andrey F. Tsatsulnikov; Edik U. Rafailov


Archive | 2015

Improvement of external quantum efficiency of blue and green InGaN LEDs using corrugated interface substrates

Modestas Zulonas; Thomas J. Slight; Ilya E. Titkov; Alexey V. Sakharov; Ksenia A. Fedorova; Wsevolod V. Lundin; A. E. Nikolaev; Wyn Meredith; Andrey F. Tsatsulnikov; Edik U. Rafailov


Archive | 2014

Colour management of InGaN/GaN based monolithic two-wavelength LEDs

Amit Yadav; Modestas Zulonas; Ilya E. Titkov; Vera L. Zerova; Ksenia A. Fedorova; Andrey F. Tsatsulnikov; Wsevolod V. Lundin; Alexey V. Sakharov; G.S. Sokolovskii; Edik U. Rafailov

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Dmitrii Denisov

Bauman Moscow State Technical University

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Valerii Karasik

Bauman Moscow State Technical University

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W. V. Lundin

Russian Academy of Sciences

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