Alfio Pappalardo

Features of Silicon Photo Multipliers: Precision Measurements of Noise, Cross-Talk, Afterpulsing, Detection Efficiency

Solid state single photon detectors are an emerging issue, with applications in the wide field of sensors and transducers. A new kind of device named Silicon Photomultiplier (SiPM) shows timing and charge resolution features that in some respect could even replace traditional photomultiplier tubes. In this paper we illustrate a complete method for the evaluation of gain, dark noise, afterpulsing, cross-talk and detection efficiency of SiPM detectors. We show the application of the method by comparing the performance of our newly developed SiPM (produced by ST Microelectronics) with another sensor present on the market (produced by Hamamatsu), and proving that our device is indeed already outstanding.

Silicon Photomultiplier Technology at STMicroelectronics

In this paper we present the results of the first electrical and optical characterization performed on 1 mm2 total area Silicon Photomultipliers (SiPM) fabricated in standard silicon planar technology at the STMicroelectronics Catania R&D clean room facility. The device consists of 289 microcells and has a geometrical fill factor of 48%. Breakdown voltage, gain, dark noise rate, crosstalk, photon detection efficiency and linearity have been measured in our laboratories. The optical characterization has been performed by varying the temperature applied to the device. The results shown in the manuscript demonstrate that the device already exhibits relevant features in terms of low dark noise rate and inter-pixel crosstalk probability, high photon detection efficiency, good linearity and single photoelectron resolution. These characteristics can be considered really promising in view of the final application of the photodetector in the Positron Emission Tomography (PET).

Characterization of a Novel 100-Channel Silicon Photomultiplier—Part I: Noise

In this paper, we present the results of the first noise characterization performed on our novel 100-channel silicon photomultiplier. We have improved our previous single-photon avalanche photodiode technology in order to set up a working device with outstanding features in terms of single-photon resolving power up to R = 45, timing resolution down to 100 ps, and photon-detection efficiency of 14% at 420 nm. Tests were performed, and features were measured, as a function of the bias voltage and of the incident photon flux. A dedicated data-analysis procedure was developed that allows one to extract at once the relevant parameters and quantify the noise.

Characterization of a Novel 100-Channel Silicon Photomultiplier—Part II: Charge and Time

In this paper, we present the results of the charge and time characterization performed on our novel 100-channel silicon photomultiplier. We have improved our previous single-photon-avalanche-diode technology in order to set up a working device with outstanding features in terms of single-photon resolving power up to R = 45, a timing resolution down to 100 ps, and photon-detection efficiency of 14% at 420 nm. Tests were performed, and features were measured as a function of the bias voltage and of the incident photon flux. A dedicated data analysis procedure was developed that allows to extract at once the relevant parameters from the amplitude spectra and to determine the timing features.

Quantum Detection Efficiency in Geiger Mode Avalanche Photodiodes

The fabrication of silicon shallow junction photodiodes is a relevant topic for the detection of blue and near ultraviolet weak photon fluxes. In this paper we present a simple model to calculate the quantum detection efficiency (QDE) of a Geiger mode avalanche photodiode (GMAP) as a function of the dead layer thickness above the junction depletion layer. A comparison between calculated and experimental data is also presented. Moreover, by using the same model, an analysis of the QDE at 420 nm wavelength of conventional GMAPs based on shallow N+-P and P+-N junctions is given.

Thermal neutron detection using a silicon pad detector and 6LiF removable converters

A semiconductor detector coupled with a neutron converter is a good candidate for neutron detection, especially for its compactness and reliability if compared with other devices, such as (3)He tubes, even though its intrinsic efficiency is rather lower. In this paper we show a neutron detector design consisting of a 3 cm × 3 cm silicon pad detector coupled with one or two external (6)LiF layers, enriched in (6)Li at 95%, placed in contact with the Si active surfaces. This prototype, first characterized and tested at INFN Laboratori Nazionali del Sud and then at JRC Ispra, was successfully shown to detect thermal neutrons with the expected efficiency and an outstanding gamma rejection capability.

Scintillating screens sensitivity and resolution studies for low energy, low intensity beam diagnostics

Targeting at Civil Engineering teaching situation in China, we design Virtual Engineering Structural Experimental System using virtual technology. Based on object-oriented development process, we put up the general system frame. We complete function analysis and use case model. We work out the detailed use case description by activity diagram, and system design by class diagram. We finish all above work by UML(the unified modeling language). Based on the design and analysis we finish the system implementation which has been used in practice and achieved good effects. The system realizes the simulation of real experiment by the interaction of the system and user. The system has advantages of saving resources, being repeatable and having no objective condition limitations comparing with traditional experiment. The virtual test system has significance on teaching and production of Civil Engineering.In order to investigate the limits of scintillating screens for beam profile monitoring in the ultra-low energy, ultra-low intensity regime, CsI:Tl, YAG:Ce, and a Tb glass-based scintillating fiber optic plate (SFOP) were tested. The screens response to 200 and 50 keV proton beams with intensities ranging from a few picoampere down to the subfemtoampere region was examined. In the following paper, the sensitivity and resolution studies are presented in detail for CsI:Tl and the SFOP, the two most sensitive screens. In addition, a possible use of scintillators for ultra-low energy antiproton beam monitoring is discussed.

Characterization of detectors for the Italian Astronomical Quantum Photometer Project

In the framework of a national collaboration to bring Quantum Optics concepts to Astronomy, we are involved in finding suitable detectors for this novel application. At ‘INAF Osservatorio Astrofisico di Catania’ and ‘INFN – Laboratori Nazionali del Sud’ laboratories, measurements of electro-optical parameters, such as photon detection efficiency (PDE), linearity, dark counts and after pulsing probability, as well as of timing resolution, have been carried out. These measurements have been done on silicon detectors, such as single photon avalanche diode (SPAD) (both single element and array), and silicon photon multiplier (SiPM), operating in the photon counting regime.

Silicon Photomultipliers for nuclear medical imaging applications

In this contribution we present the results of the first morphological and electro-optical characterization of Silicon Photomultipliers (SiPM) for nuclear medical imaging applications fabricated in standard silicon planar technology at the STMicroelectronics Catania R&D clean room facility. We have improved our previous Geiger Mode Avalanche Photodiodes (GMAP) technology in order to realize a photodetector with relevant features in terms of single-photoelectron resolution, timing and photon detection efficiency. The performances of our devices, investigated in several experimental conditions and here reported make ST-SiPM suitable in many applications like for example PET (Positron Emission Tomography).

Silicon detectors for monitoring neutron beams in n-TOF beamlines

During 2014, the second experimental area (EAR2) was completed at the n-TOF neutron beam facility at CERN (n-TOF indicates neutron beam measurements by means of time of flight technique). The neutrons are produced via spallation, by means of a high-intensity 20 GeV pulsed proton beam impinging on a thick target. The resulting neutron beam covers the energy range from thermal to several GeV. In this paper, we describe two beam diagnostic devices, both exploiting silicon detectors coupled with neutron converter foils containing (6)Li. The first one is based on four silicon pads and allows monitoring of the neutron beam flux as a function of the neutron energy. The second one, in beam and based on position sensitive silicon detectors, is intended for the reconstruction of the beam profile, again as a function of the neutron energy. Several electronic setups have been explored in order to overcome the issues related to the gamma flash, namely, a huge pulse present at the start of each neutron bunch which may blind the detectors for some time. The two devices were characterized with radioactive sources and also tested at the n-TOF facility at CERN. The wide energy and intensity range they proved capable of sustaining made them attractive and suitable to be used in both EAR1 and EAR2 n-TOF experimental areas, where they became immediately operational.