Alfred A. Zinn

Flexible Transistors with High Carrier Mobilities Made from Carbon Nanotubes

Frontside-Illuminated GaAs/AlGaAs Quantum Well Photodetector Yields 3 THz Peak Spectral Response and μA/cm 2 Dark Current

BNA Yields Widely Tunable THz Source

Combustion Spray Process Leads to Rapid Fabrication of Porous SOFC Electrodes

C 60 -Based Organic Diode Performance More than 100 × Better than Other Organic Semiconductor Devices

Surface Plasmons Utilized to Achieve High-Density Nanolithography

InGaP/GaAs HBTs Operate as Light-Emitting Transistor

Simulation of Spin-MOSFET Predicts Strong Dependence of Spin Transport on Magnetic Configuration

100-Fold X-Ray Source Brightness Improvement Possible with Liquid-Metal-Jet Anode

AlGaAs Microcooler with 2°C Maximum Cooling at 100°C Demonstrated