Ali Madouri

Hot electron cooling by acoustic phonons in graphene.

We have investigated the energy loss of hot electrons in metallic graphene by means of GHz noise thermometry at liquid helium temperature. We observe the electronic temperature T ∝ V at low bias in agreement with the heat diffusion to the leads described by the Wiedemann-Franz law. We report on T ∝ √V behavior at high bias, which corresponds to a T(4) dependence of the cooling power. This is the signature of a 2D acoustic phonon cooling mechanism. From a heat equation analysis of the two regimes we extract accurate values of the electron-acoustic phonon coupling constant Σ in monolayer graphene. Our measurements point to an important effect of lattice disorder in the reduction of Σ, not yet considered by theory. Moreover, our study provides a strong and firm support to the rising field of graphene bolometric detectors.

Spherically bent analyzers for resonant inelastic X-ray scattering with intrinsic resolution below 200 meV.

Resonant inelastic X-ray scattering with very high energy resolution is a promising technique for investigating the electronic structure of strongly correlated materials. The demands for this technique are analyzers which deliver an energy resolution of the order of 200 meV full width at half-maximum or below, at energies corresponding to the K-edges of transition metals (Cu, Ni, Co etc.). To date, high resolution under these conditions has been achieved only with diced Ge analyzers working at the Cu K-edge. Here, by perfecting each aspect of the fabrication, it is shown that spherically bent Si analyzers can provide the required energy resolution. Such analyzers have been successfully produced and have greatly improved the energy resolution in standard spherically bent analyzers.

Epitaxy of GaN Nanowires on Graphene

Epitaxial growth of GaN nanowires on graphene is demonstrated using molecular beam epitaxy without any catalyst or intermediate layer. Growth is highly selective with respect to silica on which the graphene flakes, grown by chemical vapor deposition, are transferred. The nanowires grow vertically along their c-axis and we observe a unique epitaxial relationship with the ⟨21̅1̅0⟩ directions of the wurtzite GaN lattice parallel to the directions of the carbon zigzag chains. Remarkably, the nanowire density and height decrease with increasing number of graphene layers underneath. We attribute this effect to strain and we propose a model for the nanowire density variation. The GaN nanowires are defect-free and they present good optical properties. This demonstrates that graphene layers transferred on amorphous carrier substrates is a promising alternative to bulk crystalline substrates for the epitaxial growth of high quality GaN nanostructures.

Exploration of the ultimate patterning potential achievable with focused ion beams.

Decisive advances in the field of nanosciences and nanotechnologies are intimately related to the development of new instruments and of related writing schemes and methodologies. Therefore we have recently proposed the exploitation of the nano-structuring potential of a highly focused ion beam (FIB) as a tool, to overcome intrinsic limitations of current nano-fabrication techniques and to allow innovative patterning schemes that are urgently needed in many nanoscience challenges. In this work, we will first detail a very high-resolution FIB instrument we have developed specifically to meet these nano-fabrication requirements. Then we will introduce and illustrate an advanced FIB processing scheme that is the fabrication of artificial nanopores.

Electrothermally driven high-frequency piezoresistive SiC cantilevers for dynamic atomic force microscopy

Cantilevers with resonance frequency ranging from 1 MHz to 100 MHz have been developed for dynamic atomic force microscopy. These sensors are fabricated from 3C-SiC epilayers grown on Si(100) substrates by low pressure chemical vapor deposition. They use an on-chip method both for driving and sensing the displacement of the cantilever. A first gold metallic loop deposited on top of the cantilever is used to drive its oscillation by electrothermal actuation. The sensing of this oscillation is performed by monitoring the resistance of a second Au loop. This metallic piezoresistive detection method has distinct advantages relative to more common semiconductor-based schemes. The optimization, design, fabrication, and characteristics of these cantilevers are discussed.

Direct transfer and Raman characterization of twisted graphene bilayer

Twisted bilayer graphene (tBLG) is constituted of a two-graphene layer with a mismatch angle θ between the two hexagonal structures. It has recently attracted much attention—thanks to its diverse electronic and optical properties. Here, we study the tBLG fabricated by the direct transfer of graphene monolayer prepared by chemical vapor deposition (CVD) onto another CVD graphene layer remaining attached to the copper foil. We show that high quality and homogeneous tBLG can be obtained by the direct transfer which prevents interface contamination. In this situation, the top graphene layer plays a supporting mechanical role to the bottom graphene layer as confirmed by optical microscopy, scanning electron microscopy, and Raman spectroscopy measurements. The effect of annealing tBLG was also investigated using micro-Raman spectroscopy. The Raman spectra exhibit a splitting of the G peak as well as a change in the 2D band shape indicating a possible decoupling of the two monolayers. We attribute these changes to the different interactions of the top and bottom layers with the substrate.

Graphene-capped InAs/GaAs quantum dots

Graphene was grown by chemical vapor deposition and successfully transferred onto InAs/GaAs quantum dots (QDs) grown by molecular beam epitaxy on a (001) GaAs substrate. To our knowledge, the hybrid structure of graphene replacing the conventional GaAs layer as a cap layer has not been explored until now. In this work, the authors present the photoluminescence (PL) and Raman spectroscopy study of InAs/GaAs graphene-capped QDs. The Raman measurements show an intense 2D peak at 2704 cm−1 which is the main characteristic indicating the presence of graphene. The recorded PL at temperature T = 300 K shows two sharp peaks located at 1.177 and 1.191 eV, which is attributed to radiative emission from the quantum dots. These peaks, which are generally very weak in InAs/GaAs quantum dots at this temperature, are instead very intense. The enhancement of the PL emission evidenced electron transfer from the graphene layer to the QDs.

Direct FIB fabrication and integration of “single nanopore devices” for the manipulation of macromolecules

Here we propose to detail an innovative FIB instrumental approach and processing methodologies we have developed for sub-10 nm nanopore fabrication. The main advantage of our method is first to allow direct fabrication of nanopores in relatively large quantities with an excellent reproducibility. Second our approach offers the possibility to further process or functionalize the vicinity of each pore on the same scale keeping the required deep sub-10 nm scale positioning and patterning accuracy. We will summarise the optimisation efforts we have conducted aiming at fabricating thin (10-100 nm thick) and high quality dielectric films to be used as a template for the nanopore fabrication, and at performing efficient and controlled FIB nanoengraving of such a delicate media. Finally, we will describe the method we have developed for integrating these “single nanopore devices” in electrophoresis experiments and our preliminary measurements.

Replication of very small periodic gratings with proximity x-ray lithography

Abstract This paper describes our recent results in high resolution synchrotron radiation lithography. Theoretically we show an image analysis based on the absorbed dose distribution in the x-ray resist rather than on the diffraction intensity calculations. Experimental results are presented, demonstrating a successful replication of very small periodic gratings using high resolution SiC/W masks and a high performance commercial x-ray stepper.

Improvement of the quality of graphene-capped InAs/GaAs quantum dots

In this paper, we study the transfer of graphene onto InAs/GaAs quantum dots (QDs). The graphene is first grown on Cu foils by chemical vapor deposition and then polymer Polymethyl Methacrylate (PMMA) is deposited on the top of graphene/Cu. High quality graphene sheet has been obtained by lowering the dissolving rate of PMMA using vapor processing. Uncapped as well as capped graphene InAs/GaAs QDs have been studied using optical microscopy, scanning electron microscopy, and Raman spectroscopy. We gather from this that the average shifts Δω of QDs Raman peaks are reduced compared to those previously observed in graphene and GaAs capped QDs. The encapsulation by graphene makes the indium atomic concentration intact in the QDs by the reduction of the strain effect of graphene on QDs and the migration of In atoms towards the surface. This gives us a new hetero-structure graphene–InAs/GaAs QDs wherein the graphene plays a key role as a cap layer.