Aliaksei Vetushka

Experimental quantification of useful and parasitic absorption of light in plasmon-enhanced thin silicon films for solar cells application

A combination of photocurrent and photothermal spectroscopic techniques is applied to experimentally quantify the useful and parasitic absorption of light in thin hydrogenated microcrystalline silicon (μc-Si:H) films incorporating optimized metal nanoparticle arrays, located at the rear surface, for improved light trapping via resonant plasmonic scattering. The photothermal technique accounts for the total absorptance and the photocurrent signal accounts only for the photons absorbed in the μc-Si:H layer (useful absorptance); therefore, the method allows for independent quantification of the useful and parasitic absorptance of the plasmonic (or any other) light trapping structure. We demonstrate that with a 0.9 μm thick absorber layer the optical losses related to the plasmonic light trapping in the whole structure are insignificant below 730 nm, above which they increase rapidly with increasing illumination wavelength. An average useful absorption of 43% and an average parasitic absorption of 19% over 400–1100 nm wavelength range is measured for μc-Si:H films deposited on optimized self-assembled Ag nanoparticles coupled with a flat mirror (plasmonic back reflector). For this sample, we demonstrate a significant broadband enhancement of the useful absorption resulting in the achievement of 91% of the maximum theoretical Lambertian limit of absorption.

Light trapping in thin-film solar cells measured by Raman spectroscopy

In this study, Raman spectroscopy is used as a tool to determine the light-trapping capability of textured ZnO front electrodes implemented in microcrystalline silicon (μc-Si:H) solar cells. Microcrystalline silicon films deposited on superstrates of various roughnesses are characterized by Raman micro-spectroscopy at excitation wavelengths of 442 nm, 514 nm, 633 nm, and 785 nm, respectively. The way to measure quantitatively and with a high level of reproducibility the Raman intensity is described in details. By varying the superstrate texture and with it the light trapping in the μc-Si:H absorber layer, we find significant differences in the absolute Raman intensity measured in the near infrared wavelength region (where light trapping is relevant). A good agreement between the absolute Raman intensity and the external quantum efficiency of the μc-Si:H solar cells is obtained, demonstrating the validity of the introduced method. Applications to thin-film solar cells, in general, and other optoelectronic devices are discussed.

Conductivity mapping of nanoparticles by torsional resonance tunneling atomic force microscopy

In this paper, torsional resonance tunneling mode atomic force microscopy is used to study the conductivity of nanoparticles. SnS nanoparticles capped with trioctylphosphine oxide (TOPO) and with In2S3 shell are analyzed. This contactless technique allows carrying out measurements on nanoparticles without destroying them and to obtain simultaneously topography and conductivity maps. This made it possible to achieve complete characterization of individual particles in a single measurement. The results demonstrate that the particles have conductive properties. The results have also showed that the TOPO capping layer may hinder tunneling currents, therefore should be avoided when performing these measurements.

Profilometry of thin films on rough substrates by Raman spectroscopy.

Thin, light-absorbing films attenuate the Raman signal of underlying substrates. In this article, we exploit this phenomenon to develop a contactless thickness profiling method for thin films deposited on rough substrates. We demonstrate this technique by probing profiles of thin amorphous silicon stripes deposited on rough crystalline silicon surfaces, which is a structure exploited in high-efficiency silicon heterojunction solar cells. Our spatially-resolved Raman measurements enable the thickness mapping of amorphous silicon over the whole active area of test solar cells with very high precision; the thickness detection limit is well below 1 nm and the spatial resolution is down to 500 nm, limited only by the optical resolution. We also discuss the wider applicability of this technique for the characterization of thin layers prepared on Raman/photoluminescence-active substrates, as well as its use for single-layer counting in multilayer 2D materials such as graphene, MoS2 and WS2.

2,2′:6′,2′′-Terpyridine-functionalized redox-responsive hydrogels as a platform for multi responsive amphiphilic polymer membranes

Nanophase-separated amphiphilic polymer co-networks are ideally suited as responsive membranes due to their stable co-continuous structure. Their functionalization with redox-responsive 2,2′:6′,2′′-terpyridine–metal complexes and light-responsive spiropyran derivatives leads to a novel material with tunable optical, redox and permeability properties. The versatility of the system in complexing various metal ions, such as cobalt or iron at different concentrations, results in a perfect monitoring over the degree of crosslinking of the hydrophilic poly(2-hydroxyethyl acrylate) channels. The reversibility of the complexation, the redox state of the metal and the isomerization to the merocyanine form upon UV illumination was evidenced by cyclic voltammetry, UV-Vis and permeability measurements under sequential conditions. Thus, the membrane provides light and redox addressable functionalities due to its adjustable and mechanically stable hydrogel network.

Investigating inhomogeneous electronic properties of radial junction solar cells using correlative microscopy

Solar cells with radial junctions based on silicon nanowires were investigated using correlative microscopy in order to determine the nature and origin of previously reported inhomogeneity of their electronic properties. For correlating various microscopy techniques, we have prepared sets of three Vickers type nanoindents arranged in a right triangle with 20 µm sides as marks of local frame of reference. Due to the shape of the indents (squares with 4 µm sides and clear diagonals) the position of the marks can be located with high precision by various microscopes. This makes it possible to correlate the results from scanning electron microscopy, Kelvin probe force microscopy and conductive atomic force microscopy techniques on the same place of the sample, with a precision down to individual nanowires, obtaining new information about the electronic inhomogeneity. Using the conductive AFM we analyzed the growth process of silicon nanowires step by step in order to find possible origins of the local (photo)current variations.

Direct measurement of optical losses in plasmon-enhanced thin silicon films (Conference Presentation)

Plasmon-enhanced absorption, often considered as a promising solution for efficient light trapping in thin film silicon solar cells, suffers from pronounced optical losses i.e. parasitic absorption, which do not contribute to the obtainable photocurrent. Direct measurements of such losses are therefore essential to optimize the design of plasmonic nanostructures and supporting layers. Importantly, contributions of useful and parasitic absorption cannot be measured separately with commonly used optical spectrophotometry. In this study we apply a novel strategy consisting in a combination of photocurrent and photothermal spectroscopic techniques to experimentally quantify the trade-off between useful and parasitic absorption of light in thin hydrogenated microcrystalline silicon (μc-Si:H) films incorporating self-assembled silver nanoparticle arrays located at their rear side. The highly sensitive photothermal technique accounts for all absorption processes that result in a generation of heat i.e. total absorption while the photocurrent spectroscopy accounts only for the photons absorbed in the μc-Si:H layer which generate photocarriers i.e. useful absorption [1]. We demonstrate that for 0.9 μm thick μc-Si:H film the optical losses resulting from the plasmonic light trapping are insignificant below 730 nm, above which they increase rapidly with increasing illumination wavelength. For the films deposited on nanoparticle arrays coupled with a flat silver mirror (plasmonic back reflector), we achieved a significant broadband enhancement of the useful absorption resulting from both surface texturing and plasmonic scattering, and achieving 91% of the theoretical Lambertian limit of absorption. [1] S. Morawiec et al. Experimental Quantification of Useful and Parasitic Absorption of Light in Plasmon-Enhanced Thin Silicon Films for Solar Cells Application. Scientific Reports 6 (2016)

Direct Imaging of Dopant Distribution in Polycrystalline ZnO Films

Two fundamental requirements of transparent conductive oxides are high conductivity and low optical absorptance, properties strongly dependent on the free-carrier concentration of the film. The free-carrier concentration is usually tuned by the addition of dopant atoms; which are commonly assumed to be uniformly distributed in the films or partially segregated at grain boundaries. Here, the combination of secondary ion mass spectroscopy at the nanometric scale (NanoSIMS) and Kelvin probe force microscopy (KPFM) allows direct imaging of boron-dopant distribution in polycrystalline zinc oxide (ZnO) films. This work demonstrates that the boron atoms have a bimodal spatial distribution within each grain of the ZnO films. NanoSIMS analysis shows that boron atoms are preferentially incorporated into one of the two sides of each ZnO grain. KPFM measurements confirm that boron atoms are electrically active, locally increasing the free-carrier concentration in the film. The proposed cause of this nonuniform dopant distribution is the different sticking coefficient of Zn adatoms on the two distinct surface terminations of the ZnO grains. The higher sticking coefficient of Zn on the c+ surface restricts the boron incorporation on this side of the grains, resulting in preferential boron incorporation on the c- side and causing the bimodal distribution.

Decomposition of Mixed Phase Silicon Raman Spectra

Series of Raman spectra were measured for microcrystalline silicon thin film with variable crystallinity. Five sets of Raman spectra (corresponding to excitations at 325 nm, 442 nm, 514.5 nm, 632.8 nm and 785 nm wavelengths) were subjected to factor analysis which showed that each set of spectra consisted of just two independent spectral components. Decomposition of the measured Raman spectra into the amorphous and the microcrystalline components is illustrated for 514.5 nm and 632.8 nm excitations. Effect of the light scattering on absolute intensity of Raman spectra was identified even for excitation wavelength highly absorbed in the mixed phase silicon layers.