Allen S. Cross

High-Power V-Band InGaAs/InP Photodiodes

InGaAs/InP-modified uni-traveling carrier photodiodes with cliff layer were designed and fabricated for V-band (50-75 GHz) applications. The devices were flip-chip bonded on AlN submounts for efficient heat dissipation. A high-impedance transmission line was designed to compensate for the parasitic capacitance and enhance the bandwidth. Devices with 3-dB bandwidths of 50 and 65 GHz demonstrated high-output RF power of 20.3 and 15.9 dBm, respectively.

InP-based waveguide photodiodes heterogeneously integrated on silicon-on-insulator for photonic microwave generation

High-linearity modified uni-traveling carrier photodiodes on silicon-on-insulator with low AM-to-PM conversion factor are demonstrated. The devices deliver more than 2.5 dBm RF output power up to 40 GHz and have an output third order intercept point of 30 dBm at 20 GHz. Photodiode arrays exceed a saturation current-bandwidth-product of 630 mA · GHz and reach unsaturated RF output power levels of 10 dBm at 20 GHz.

High-power flip-chip mounted photodiode array

Four-element modified uni-traveling-carrier (MUTC) photodiode arrays (PDA) flip-chip bonded onto transmission lines on AlN substrates are demonstrated. High RF output powers of 26.2 dBm and 21.0 dBm are achieved at 35 GHz and 48 GHz, respectively, using a PDA with 28-μm diameter photodiodes. A systematic comparison between a PDA with four 20 μm-diameter elements and a discrete detector with the same active area (40-μm diameter) is presented. The PDA achieved higher output power and thermal dissipation compared to its discrete counterpart.

Balanced InP/InGaAs Photodiodes With 1.5-W Output Power

We report InP/InGaAs modified unitraveling-carrier balanced photodiodes (PDs). The back-illuminated PDs were flip-chip bonded on diamond submounts for enhanced heat sinking. The device demonstrated a 3-dB bandwidth of 8 GHz and a 30-dB common-mode rejection ratio at frequencies of <; 10 GHz. High saturation current of > 320 mA, maximum output power of 31.7 dBm (1.5 W) into a 50-Ω load, and good linearity with a third-order intercept point of up to 47 dBm were measured at the 3-dB bandwidth frequency of 8 GHz.

High-power high-speed waveguide photodiodes and photodiode arrays heterogeneously integrated on siliconon-insulator

We demonstrate InP-based modified uni-traveling carrier photodiodes on silicon-on-insulator (SOI) waveguides with an internal responsivity of 0.85 A/W, up to 30 GHz bandwidth, and high RF output power. Photodiode arrays exceed a saturation current-bandwidth-product of 630 mA·GHz and +10 dBm RF output power at 20 GHz.

Development of narrowband modified uni-travelling-carrier photodiodes with high power efficiency

Narrowband high-power photodiodes (PDs) are promising candidates for analog photonic systems including RF antenna transmitter applications and low phase noise photonic oscillators. Our previous work has demonstrated that wideband modified uni-travelling-carrier (MUTC) PDs with cliff layer [1] can achieve high power at high frequency and that their performance can be further enhanced by flip-chip bonding on high thermal conductivity AlN substrates[2,3]. Here we present our recent work on developing narrowband MUTC-PDs to improve power efficiency (ηρ) and AC Responsivity (RAC).

Modified Uni-Traveling Carrier Photodiodes Heterogeneously Integrated on Silicon-on-Insulator (SOI)

We propose and demonstrate a novel InP-based evanescently-coupled modified uni-traveling carrier photodiode (MUTC PD) on SOI waveguide. A 100-µm long waveguide MUTC PD reaches a third-order local intercept point (IP3) of 20 dBm at 7 GHz and 10 mA.

High-power, high-linearity photodiodes for RF photonics

High-power, high-linearity photodiodes are essential components for photonic microwave applications since they have the potential to improve many aspects of the link performance such as link gain, noise figure, and spurious free dynamic range. This talk will describe photodiode structures that we have developed to achieve RF output power levels as high as 0.75 W at 15 GHz and high linearity, as measured by the output third-order intercept point (OIP3), > 55 dBm. Recent work has focused on extending operation to higher frequencies and heterogeneous integration with Si photonic circuits.

High-power and high-linearity photodetector module based on a modified uni-traveling carrier photodiode

We report on packaged photodiode modules based on modified uni-traveling carrier photodiodes (MUTC-PDs). Modules with MUTC-PDs flip-chipped on Aluminum Nitride (AlN) and an active area diameter of 40 μm were developed. The module demonstrated a 3-dB bandwidth of up to 17 GHz. High saturated RF output power was achieved with 25 dBm output power at 10 GHz and 23.8 dBm at 15 GHz. Also, using a two tone experimental setup we measured the output 3rd order intercept point (OIP3) at 10 GHz to be over 30 dBm. Additionally, modules with MUTC-PDs flip-chipped on a Diamond substrate and an active area of 20 μm were developed. The modules exhibited a 3-dB bandwidth up to 30 GHz and an RF output power of 17 dBm at 30 GHz. To the best of our knowledge, these are the highest RF power and OIP3 levels ever reported in this frequency range from a packaged photodiode.

High-power InP-based waveguide photodiodes and photodiode arrays heterogeneously integrated on SOI

For the first time we demonstrate evanescently-coupled modified uni-traveling carrier photodiodes (MUTC PDs) on silicon-on-insulator (SOI) waveguide with an internal responsivity of 0.85 A/W, up to 15 GHz bandwidth, and high RF output power. A novel 2-element MUTC PD array has a saturation current-bandwidth-product of >;630 mA*GHz and achieves +9 dBm RF output power at 20 GHz.