Alvaro Moscoso-Mártir

Low V π Silicon photonics modulators with highly linear epitaxially grown phase shifters

We report on the design of Silicon Mach-Zehnder carrier depletion modulators relying on epitaxially grown vertical junction diodes. Unprecedented spatial control over doping profiles resulting from combining local ion implantation with epitaxial overgrowth enables highly linear phase shifters with high modulation efficiency and comparatively low insertion losses. A high average phase shifter efficiency of VπL = 0.74 V⋅cm is reached between 0 V and 2 V reverse bias, while maintaining optical losses at 4.2 dB/mm and the intrinsic RC cutoff frequency at 48 GHz (both at 1 V reverse bias). The fabrication process, the sensitivity to fabrication tolerances, the phase shifter performance and examples of lumped element and travelling wave modulators are modeled in detail. Device linearity is shown to be sufficient to support complex modulation formats such as 16-QAM.

Silicon photonics WDM transmitter with single section semiconductor mode-locked laser

Abstract We demonstrate a wavelength domain-multiplexed (WDM) optical link relying on a single section semiconductor mode-locked laser (SS-MLL) with quantum dash (Q-Dash) gain material to generate 25 optical carriers spaced by 60.8 GHz, as well as silicon photonics (SiP) resonant ring modulators (RRMs) to modulate individual optical channels. The link requires optical reamplification provided by an erbium-doped fiber amplifier (EDFA) in the system experiments reported here. Open eye diagrams with signal quality factors (Q-factors) above 7 are measured with a commercial receiver (Rx). For higher compactness and cost effectiveness, reamplification of the modulated channels with a semiconductor optical amplifier (SOA) operated in the linear regime is highly desirable. System and device characterization indicate compatibility with the latter. While we expect channel counts to be primarily limited by the saturation output power level of the SOA, we estimate a single SOA to support more than eight channels. Prior to describing the system experiments, component design and detailed characterization results are reported including design and characterization of RRMs, ring-based resonant optical add-drop multiplexers (RR-OADMs) and thermal tuners, S-parameters resulting from the interoperation of RRMs and RR-OADMs, and characterization of Q-Dash SS-MLLs reamplified with a commercial SOA. Particular emphasis is placed on peaking effects in the transfer functions of RRMs and RR-OADMs resulting from transient effects in the optical domain, as well as on the characterization of SS-MLLs in regard to relative intensity noise (RIN), stability of the modes of operation, and excess noise after reamplification.

Modification of Level Dependent ASE-Signal Beat Noise by Optical and Electrical Filtering in Optically Preamplified Direct Detection Receivers

We derive compact equations describing the modification of amplified spontaneous emission signal beat noise arising from optical and electrical filtering in optically preamplified direct detection receivers. In particular, we show that this modification typically results in a further decrease of the signal quality factor. This is particularly pronounced in the presence of electrical filters with steep transfer functions such as, e.g., occurring when feeding the signal through an antialiasing filter prior to analog-to-digital conversion or in a real-time oscilloscope, in the latter case leading to counter-intuitive dependencies of the measured signal quality on the characteristics of the test setup. Predictions are exemplified in concrete system models and verified with experiments. While the modeling assumptions and the accuracy of the predictions are in line with models previously reported in the literature, derived expressions allow straightforwardly tying the modification of the level dependent noise to signal levels, baud rate, signal spectrum, and filter transfer functions.We derive an analytical model describing the effect of filtering on amplified spontaneous emission noise during or after opto-electronic conversion. In particular, we show that electrical filtering results in a further reduction of the signal quality factor associated with an effective increase of the noise levels and can lead to counter-intuitive dependencies of the measured signal quality on the characteristics of the test setup. Closed form equations are compared with numerical models and experiments, showing excellent agreement.

Hybrid silicon photonics flip-chip laser integration with vertical self-alignment

We present a flip-chip integration process in which the vertical alignment is guaranteed by a mechanical contact between pedestals defined in a recess etched into a silicon photonics chip and a laser or semiconductor optical amplifier. By selectively etching up to the active region of the III-V materials, we can make the accuracy of vertical alignment independent on the process control applied to layer thicknesses during silicon photonics or III-V chip fabrication, enabling alignment tolerances below ±10 nm in the vertical (Z-)direction.

High-speed resonantly enhanced silicon photonics modulator with a large operating temperature range

We present a novel resonant Mach-Zehnder modulator whose arms are each loaded with five identical resonators. Size and power consumption are aggressively reduced compared to conventional modulators based on linear phase shifters. At the same time, a large optical bandwidth of 3.8 nm is maintained. We experimentally demonstrate open eye diagrams at 30 Gbps with a signal Q-factor remaining within a factor of 2 of its peak value in an operational temperature range spanning 55°C.

Epitaxially grown vertical junction phase shifters for improved modulation efficiency in silicon depletion-type modulators

High-speed silicon modulators based on the plasma effect in reverse-biased p(i)n junction phase shifters have been extensively investigated. The main challenge for such modulators is to maximize their modulation efficiency without compromising high-speed performance and insertion losses. Here, we propose a highly efficient silicon modulator based on a Mach-Zehnder Interferometer in which the doping profile of a vertical pin junction is precisely controlled by means of in-situ doping during silicon epitaxial growth. The precise level of control afforded by this fabrication procedure allows separately optimizing doping concentrations in the immediate vicinity of the junction and in surrounding electrical transport layers at the nanometric scale, enabling high performance levels. Free carrier absorption losses are minimized by implementing high carrier densities only in the waveguide regions where they benefit the most, i.e., in the immediate vicinity of the junction. Since these devices rely entirely on single crystal silicon, performance degradation caused by poor transport and high optical losses in poly- or amorphous silicon (as utilized in similar vertical phase shifter geometries such as semiconductor-insulator-semiconductor capacitive phase shifters) is avoided. Furthermore, unlike conventional plasma effect silicon phase shifters, the bandwidth of the proposed phase shifters is largely independent of the applied reverse voltage and the phase shift versus applied voltage is linearized, making them more suitable for complex modulation formats. The efficiency of the single ended phase shifters is expected to reach a VπL of 0.56 V•cm and absorption losses of α=4.5 dB/mm, a good performance metric for depletion-type modulators. Lumped element Mach-Zehnder Modulators as well as travelling-wave modulators with phase matching based on meandered waveguides have been designed and their RF characteristics simulated and optimized with Ansoft HFSS. First experiments have validated the growth of the epitaxial stack and complete devices are currently being fabricated.

Wideband multi-stage CROW filters with relaxed fabrication tolerances

We present wideband and large free spectral range optical filters with steep passband edges for the selection of adjacent WDM communication channels that can be reliably fabricated with mainstream silicon photonics technology. The devices are based on three cascaded stages of coupled resonator optical waveguides loaded on a common bus waveguide. These stages differ in the number of resonators but are implemented with exactly identical unit cells, comprised of a matched racetrack resonator layout and a uniform spacing between cells. The different number of resonators in each stage allows a high rejection in the through port response enabled by the interleaved distribution of zeros. Furthermore, the exact replication of a unique cell avoids the passband ripple and high lobes in the stopband that typically arise in apodized coupled resonator optical waveguide based filters due to fabrication and coupling induced variations in the effective path length of each resonator. Silicon photonics filters designed for the selection of 9 adjacent optical carriers generated by a 100 GHz free spectral range comb laser have been successfully fabricated with 248 nm DUV lithography, achieving an out-of-band rejection above 11 dB and an insertion loss of less than 0.5 dB for the worst channels.

Passively biased resonantly enhanced silicon photonics modulator with high optical bandwidth

Ring resonator modulators reach high modulation efficiencies, are very compact and can be electrically driven as lumped elements. However, their limited optical bandwidth requires temperature stabilization, limiting their power efficiency. A novel ring assisted Mach-Zehnder modulator (MZM) aggressively reduces power consumption. Moreover, an integration scheme passively sets the 3 dB point during attachment of the input fiber relative to a multimode grating coupler used as the first splitter element of the interferometer. Straight phase shifters are replaced by arrays of highly overcoupled resonators maintaining a sufficiently high finesse and a substantial resonant enhancement while minimizing the excess losses at the resonator to waveguide junctions. A large resonance bandwidth compatible with thermal operation over 50 °C without dynamic compensation is obtained together with a factor larger than four in the reduction of power consumption relative to a conventional MZM.

High speed WDM interconnect using silicon photonics ring modulators and mode-locked laser

We demonstrate an 8 by 14 Gbps compatible WDM link based on a single-section semiconductor mode-locked laser, silicon photonics resonant ring modulators and joint channel reamplification with a semiconductor optical amplifier operated in the linear regime. Individual channels reach a data rate of 25 Gbps with signal quality-factors above 7.

Silicon photonics WDM interconnects based on resonant ring modulators and semiconductor mode locked laser

We demonstrate wavelength domain multiplexed (WDM) data transmission with a data rate of 14 Gbps based on optical carrier generation with a single-section semiconductor mode-locked laser (SS-MLL) and modulation with a Silicon Photonics (SiP) resonant ring modulator (RRM). 18 channels are sequentially measured, whereas the best recorded eye diagrams feature signal quality factors (Q-factors) above 7. While optical re-amplification was necessary to maintain the link budgets and therefore system measurements were performed with an erbium doped fiber amplifier (EDFA), preliminary characterization done with a semiconductor optical amplifier (SOA) indicates compatibility with the latter pending the integration of an additional optical filter to select a subset of carriers and prevent SOA saturation. A systematic analysis of the relative intensity noise (RIN) of isolated comb lines and of signal Q-factors indicates that the link is primarily limited by amplified spontaneous emission (ASE) from the EDFA rather than laser RIN. Measured RIN for single comb components is below -120 dBc/Hz in the range from 7 MHz to 4 GHz and drops to the shot noise level at higher frequencies.