Amelia Barreiro

Current-induced cleaning of graphene

A simple yet highly reproducible method to suppress contamination of graphene at low temperature inside the cryostat is presented. The method consists of applying a current of several milliamperes through the graphene device, which is here typically a few microns wide. This ultrahigh current density is shown to remove contamination adsorbed on the surface. This method is well suited for quantum electron transport studies of undoped graphene devices, and its utility is demonstrated here by measuring the anomalous quantum Hall effect.

Subnanometer Motion of Cargoes Driven by Thermal Gradients Along Carbon Nanotubes

An important issue in nanoelectromechanical systems is developing small electrically driven motors. We report on an artificial nanofabricated motor in which one short carbon nanotube moves relative to another coaxial nanotube. A cargo is attached to an ablated outer wall of a multiwalled carbon nanotube that can rotate and/or translate along the inner nanotube. The motion is actuated by imposing a thermal gradient along the nanotube, which allows for subnanometer displacements, as opposed to an electromigration or random walk effect.

Room-Temperature Gating of Molecular Junctions Using Few-Layer Graphene Nanogap Electrodes

We report on a method to fabricate and measure gateable molecular junctions that are stable at room temperature. The devices are made by depositing molecules inside a few-layer graphene nanogap, formed by feedback controlled electroburning. The gaps have separations on the order of 1-2 nm as estimated from a Simmons model for tunneling. The molecular junctions display gateable I-V-characteristics at room temperature.

Transport Properties of Graphene in the High-Current Limit

We present a detailed study of the high-current transport properties of graphene devices patterned in a four-point configuration. The current tends to saturate as the voltage across graphene is increased but never reaches the complete saturation as in metallic nanotubes. Measurements are compared to a model based on the Boltzmann equation, which includes electron-scattering processes due to charged and neutral impurities, and graphene optical phonons. The saturation is incomplete because of the competition between disorder and optical phonon scattering.

Graphene at high bias: cracking, layer by layer sublimation, and fusing.

Graphene and few-layer graphene at high bias expose a wealth of phenomena due to the high temperatures reached. With in situ transmission electron microscopy, we observe directly how the current modifies the structure, and vice versa. In some samples, cracks propagate from the edges of the flakes, leading to the formation of narrow constrictions or to nanometer spaced gaps after breakdown. In other samples, we find layer-by-layer evaporation of few-layer graphene, which could be exploited for the controlled production of single layer graphene from multilayered samples. Surprisingly, we even find that two pieces of graphene that overlap can heal out at high bias and form one continuous sheet. These findings open up new avenues to structure graphene for specific device applications.

Understanding the catalyst-free transformation of amorphous carbon into graphene by current-induced annealing

We shed light on the catalyst-free growth of graphene from amorphous carbon (a–C) by current-induced annealing by witnessing the mechanism both with in-situ transmission electron microscopy and with molecular dynamics simulations. Both in experiment and in simulation, we observe that small a–C clusters on top of a graphene substrate rearrange and crystallize into graphene patches. The process is aided by the high temperatures involved and by the van der Waals interactions with the substrate. Furthermore, in the presence of a–C, graphene can grow from the borders of holes and form a seamless graphene sheet, a novel finding that has not been reported before and that is reproduced by the simulations as well. These findings open up new avenues for bottom-up engineering of graphene-based devices.

Quantum Dots at Room Temperature Carved out from Few-Layer Graphene

We present graphene quantum dots endowed with addition energies as large as 1.6 eV, fabricated by the controlled rupture of a graphene sheet subjected to a large electron current in air. The size of the quantum dot islands is estimated to be in the 1 nm range. The large addition energies allow for Coulomb blockade at room temperature, with possible application to single-electron devices.

Current-voltage characteristics of graphene devices: Interplay between Zener-Klein tunneling and defects

Here, we argue that Zener-Klein tunneling can be observed in graphene with the most common device layout undoped, four-point 4pt configuration, and without any local gates by simply measuring the I-V at room temperature. On the basis of theoretical arguments, in graphene, the ZK current is expected to manifest itself with a superlinear current I V with =1.5. The basic concepts can be understood with a semiclassical treatment which, in the case of ballistic transport, allows us to write an analytical expression for the I-V’s as a function of the doping. Then, we study the role of defects with the “exact” nonperturbative nonequilibrium Green’s function approach finding the counterintuitive result that charged impurities enhance the visibility of the ZK current. Finally, we report measurements showing that the I-V’s at the Dirac point is indeed described by power laws, I V, with ranging from 1 to 1.4. The exponent is higher when the mobility is lower, consistently with theoretical predictions.

Lattice expansion in seamless bilayer graphene constrictions at high bias.

Our understanding of sp(2) carbon nanostructures is still emerging and is important for the development of high performance all carbon devices. For example, in terms of the structural behavior of graphene or bilayer graphene at high bias, little to nothing is known. To this end, we investigated bilayer graphene constrictions with closed edges (seamless) at high bias using in situ atomic resolution transmission electron microscopy. We directly observe a highly localized anomalously large lattice expansion inside the constriction. Both the current density and lattice expansion increase as the bilayer graphene constriction narrows. As the constriction width decreases below 10 nm, shortly before failure, the current density rises to 4 × 10(9) A cm(-2) and the constriction exhibits a lattice expansion with a uniaxial component showing an expansion approaching 5% and an isotropic component showing an expansion exceeding 1%. The origin of the lattice expansion is hard to fully ascribe to thermal expansion. Impact ionization is a process in which charge carriers transfer from bonding states to antibonding states, thus weakening bonds. The altered character of C-C bonds by impact ionization could explain the anomalously large lattice expansion we observe in seamless bilayer graphene constrictions. Moreover, impact ionization might also contribute to the observed anisotropy in the lattice expansion, although strain is probably the predominant factor.