Amrit Laudari
University of Missouri
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Featured researches published by Amrit Laudari.
ACS Applied Materials & Interfaces | 2014
Thiago Cipriano; Grant Knotts; Amrit Laudari; Roberta C. Bianchi; Wendel A. Alves; S. Guha
Peptide-based nanostructures derived from natural amino acids are superior building blocks for biocompatible devices as they can be used in a bottom-up process without the need for expensive lithography. A dense nanostructured network of l,l-diphenylalanine (FF) was synthesized using the solid-vapor-phase technique. Formation of the nanostructures and structure-phase relationship were investigated by electron microscopy and Raman scattering. Thin films of l,l-diphenylalanine micro/nanostructures (FF-MNSs) were used as the dielectric layer in pentacene-based field-effect transistors (FETs) and metal-insulator-semiconductor diodes both in bottom-gate and in top-gate structures. Bias stress studies show that FF-MNS-based pentacene FETs are more resistant to degradation than pentacene FETs using FF thin film (without any nanostructures) as the dielectric layer when both are subjected to sustained electric fields. Furthermore, it is demonstrated that the FF-MNSs can be functionalized for detection of enzyme-analyte interactions. This work opens up a novel and facile route toward scalable organic electronics using peptide nanostructures as scaffolding and as a platform for biosensing.
Flexible and Printed Electronics | 2016
Kristin Gooden; Amrit Laudari; Grant Knotts; S. Guha
Inkjet and other forms of printing are now popular deposition techniques for the various layers in organic electronic devices, which are crucial for the development of large-scale, low-cost, and flexible electronics. Along with the ease of deposition, inkjet printing provides better control of the organic semiconductor–dielectric interface in field-effect transistors (FETs) and metal–insulator–semiconductor (MIS) diodes, compared to other deposition techniques. We compare the electrical characteristics of inkjet-printed and spincoated poly-4-vinyl phenol (PVP) dielectric layers in pentacene-based and 6, 13-bis(triisopropylsilylethynyl) (TIPS)-pentacene-based FETs and MIS structures. Printed PVP films provide a natural alignment for the growth of TIPS-pentacene, thus improving the interface. TIPS-pentacene on printed PVP shows an order of magnitude higher FET charge carrier mobility compared to TIPS-pentacene on spincoated PVP FETs. Capacitance–voltage and conductance–voltage investigations of the MIS structures yield a lower value for the interface trap density for the printed PVP TIPS-pentacene device compared to the spincoated PVP TIPS-pentacene diode. Thermally grown pentacene on printed and spincoated PVP shows similar performance in MIS and FET structures.
ACS Applied Materials & Interfaces | 2018
Alec Pickett; M. Torkkeli; Tushita Mukhopadhyay; Boregowda Puttaraju; Amrit Laudari; Andreas E. Lauritzen; Oier Bikondoa; Jakob Kjelstrup-Hansen; Matti Knaapila; Satish Patil; S. Guha
Copolymers based on diketopyrrolopyrrole (DPP) cores have attracted a lot of attention because of their high p-type as well as n-type carrier mobilities in organic field-effect transistors (FETs) and high power conversion efficiencies in solar cell structures. We report the structural and charge transport properties of n-dialkyl side-chain-substituted thiophene DPP end-capped with a phenyl group (Ph-TDPP-Ph) monomer in FETs which were fabricated by vacuum deposition and solvent coating. Grazing-incidence X-ray diffraction (GIXRD) from bottom-gate, bottom-contact FET architectures was measured with and without biasing. Ph-TDPP-Ph reveals a polymorphic structure with π-conjugated stacking direction oriented in-plane. The unit cell comprises either one monomer with a = 20.89 Å, b = 13.02 Å, c = 5.85 Å, α = 101.4°, β = 90.6°, and γ = 94.7° for one phase (TR1) or two monomers with a = 24.92 Å, b = 25.59 Å, c = 5.42 Å, α = 80.3°, β = 83.5°, and γ = 111.8° for the second phase (TR2). The TR2 phase thus signals a shift from a coplanar to herringbone orientation of the molecules. The device performance is sensitive to the ratio of the two triclinic phases found in the film. Some of the best FET performances with p-type carrier mobilities of 0.1 cm2/V s and an on/off ratio of 106 are for films that comprise mainly the TR1 phase. GIXRD from in operando FETs demonstrates the crystalline stability of Ph-TDPP-Ph.
Organic Field-Effect Transistors XVI | 2017
Amrit Laudari; Suchi Guha
The ferroelectric nature of polymer ferroelectrics such as poly(vinylidene fluoride) (PVDF) has been known for over 45 years. However, its role in interfacial transport in organic/polymeric field-effect transistors (FETs) is not that well understood. Dielectrics based on PVDF and its copolymers are a perfect test-bed for conducting transport studies where a systematic tuning of the dielectric constant with temperature may be achieved. The charge transport mechanism in an organic semiconductor often occurs at the intersection of band-like coherent motion and incoherent hopping through localized states. By choosing two small molecule organic semiconductors - pentacene and 6,13 bis(triisopropylsilylethynyl)pentacene (TIPS-pentacene) – along with a copolymer of PVDF (PVDF-TrFe) as the dielectric layer, the transistor characteristics are monitored as a function of temperature. A negative coefficient of carrier mobility is observed in TIPS-pentacene upwards of 200 K with the ferroelectric dielectric. In contrast, TIPS-pentacene FETs show an activated transport with non-ferroelectric dielectrics. Pentacene FETs, on the other hand, show a weak temperature dependence of the charge carrier mobility in the ferroelectric phase of PVDF-TrFE, which is attributed to polarization fluctuation driven transport resulting from a coupling of the charge carriers to the surface phonons of the dielectric layer. Further, we show that there is a strong correlation between the nature of traps in the organic semiconductor and interfacial transport in organic FETs, especially in the presence of a ferroelectric dielectric.
Organic Electronics | 2017
Alec Pickett; Abhisek Mohapatra; Amrit Laudari; Soma Khanra; Thulasi Ram; Satish Patil; S. Guha
Physical review applied | 2018
Amrit Laudari; Alessandro R. Mazza Mazza; Alexander Daykin; Soma Khanra; K. Ghosh; Franscious Cummings; T.F.G. Muller; Paul F. Miceli; S. Guha
Bulletin of the American Physical Society | 2018
Alec Pickett; Tushita Mukhopadyay; Andreas E. Lauritzen; Amrit Laudari; Mika Torkkeli; Jakob Kjelstrup-Hansen; Satish Patil; Matti Knaapila; S. Guha
MRS Advances | 2017
Amrit Laudari; Shubhra Gangopadhyay; S. Guha
Chemistry of Materials | 2017
Subhadip Goswami; Jeff L. Hernandez; Melissa K. Gish; Jiliang Wang; Bethy Kim; Amrit Laudari; S. Guha; John M. Papanikolas; John R. Reynolds; Kirk S. Schanze
Bulletin of the American Physical Society | 2017
Alec Pickett; Abhisek Mohapatra; Amrit Laudari; Soma Khanra; Thulasi Ram; Satish Patil; S. Guha