Anand S. Gawarikar

Radiation efficiency of narrowband coherent thermal emitters

The far field radiation efficiency achievable in narrowband thermal emitters is investigated, taking into account the full spatial and spectral variation of the emissivity. A coupled Fabry-Perot cavity model is used to develop an insight into the efficiency variation with cavity coherence and device temperature. It is found that the spatial variation of emissivity has to be explicitly included in the radiation power calculations to accurately estimate the achievable power efficiencies. The calculated radiation efficiencies of an ideal coherent cavity coupled emitter were found to vary from 0.1% to 9%, with a corresponding increase in the emission linewidth from 6.3 nm to 930 nm, and were much lower than that estimated without accounting for effects of spatial coherence. The analysis presented here can be used to determine the optimal operating temperature of a coherent thermal emitter once its emission characteristics and conduction losses are known and it is demonstrated that this optimum temperature is ...

Adhesion energy in nanogap InP∕InGaAs microcantilevers

The adhesion energy is measured between InGaAs quantum wells that have collapsed across a 125nm air gap in an InP∕InGaAs heterostructure. The method relies on measuring the unadhered length and shape of collapsed microcantilevers with optical interferometry. The adhesion energy is found to be 72±16mJm−2. Since the air gap is much smaller than has been measured previously, the influence of van der Waals forces across the gap was included in theoretical modeling. It was found that the forces should not cause significant deviation from the standard adhesion models unless the adhesion energy drops below 25mJm−2.

Midwave thermal infrared detection using semiconductor selective absorption.

The performance of thermal detectors is derived for devices incorporating materials with non-uniform spectral absorption. A detector designed to have low absorption in the primary thermal emission band at a given temperature will have a background-limited radiation noise well below that of a blackbody absorber, which is the condition typically assessed for ultimate thermal detector performance. Specific examples of mid-wave infrared (ʎ ∼ 3-5 μm) devices are described using lead selenide as a primary absorber with optical cavity layers that maximize coupling. An analysis of all significant noise sources is presented for two example room-temperature devices designed to have detectivities up to 4.37 × 10(10) cm Hz(1/2) W(-1), which is a factor 3.1 greater than the traditional blackbody limit. An alternative method of fabricating spectrally selective devices by patterning a plasmonic structure in silver is also considered.

Radiation heat transfer dominated microbolometers

Radiation heat transfer limited thermal conductance represents the ultimate lower limit of the thermal isolation achievable in a microbolometer. A microbolometer structure with radiation limited thermal conductance has been fabricated and its operation demonstrated.

High Detectivity Uncooled Thermal Detectors With Resonant Cavity Coupled Absorption in the Long-Wave Infrared

We describe uncooled thermal detectors with a peak detectivity of at least 3 ×10⁹ cm √{Hz}/W with spectrally selective absorption in the long-wave infrared. The spectral selectivity in absorption is achieved through resonant cavity coupling of a thin metal film with a low-order air-gap optical cavity. The electrical readout uses thermoelectric thin films with a Johnson noise limited performance. The detectors are of multiple sizes but those with 100- μm² area have time constants of 58 ms and thermal conductances of 2.3 ×10^-7 W/K.

Beyond the blackbody radiation limit: High sensitivity thermal detectors

The blackbody radiation limit has traditionally been set forth as the ultimate performance limit of thermal detectors. However, this fundamental limit assumes that the detector absorbs uniformly throughout the thermal spectrum. In much the same way as photon detectors can achieve very high D* because they do not absorb photon energies below their bandgap, so too can thermal detectors except that thermal detectors are not limited to cryogenic operation. In both cases, the enhanced theoretical D* is achieved because the radiation noise is reduced in a device that does not absorb at a uniform high level throughout the thermal emission band. There are multiple ways to achieve high D* in thermal detectors. One is to use materials that absorb only in a certain spectral range, just as in photon detectors. For example a detector made from PbSe, with proper optical coupling, absorbs only photons with wavelengths shorter than 4.9μm. The radiation limited detectivity of such a device can theoretically exceed 9 x 1010cmHz1/2/W in the MWIR. Even with Johnson and 1/f noise estimates included, it can still exceed 2.5x1010cmHz1/2/W in the MWIR. Another technique, applicable for narrowband thermal detectors, is probably even more powerful. Consider a thermal detector that is almost completely transparent. Here, the radiation noise has been reduced but the signal has been reduced even more. However, if the device is now placed inside an optical cavity, then at one wavelength and in one direction, the nearly transparent detector couples to the cavity resonance to absorb at 100%. Radiation from all other wavelengths and directions are rejected by the cavity or are absorbed only weakly by the detector. It is shown that theoretically, the D* of these devices are roughly proportional to the inverse square root of the spectral resonant width under certain conditions. It is also shown that even including Johnson noise and 1/f noise, the practically achievable D* approaches or exceeds 1011 cmHz1/2/W.

Process Integration of Co-Sputtered Bismuth Telluride/Antimony Telluride Thermoelectric Junctions

Incorporation of bismuth telluride/antimony telluride co-sputtered thermoelectric junctions into MEMS devices requires process developments for patterning and encapsulation as well as characterization of properties such as film stress and contact resistance. Test structures are presented for measuring important thermoelectric properties, resistivity, thermal conductivity, carrier concentration, and Seebeck coefficient. A fabrication process is presented that allows the junctions to be deposited, patterned, encapsulated, and etch released. Measurement of the thermoelectric junctions reveals a room temperature figure of merit, ZT, of 0.43 with a total Seebeck coefficient difference of 150 μV/K, resistivities of 17.4 and 7.6 μΩ-m, and thermal conductivity of 0.34 and 0.30 W/mK for antimony telluride and bismuth telluride, respectively. The junctions have been incorporated into state of the art uncooled thermopile infrared detectors with a peak detectivity of 3 × 109 cm*Hz1/2/W.

Effective Area Formulation for Thermal Detector Characterization

We have derived an expression for the effective absorbing area for thermal infrared detectors having non-zero absorption in the support legs, which is different from the geometric areas of the constituent detector elements. This technique is particularly applicable to devices where sensitivity is more important than fill-factor, as opposed to standard imaging arrays. The effective area can simply be substituted in standard equations to obtain a good estimate of the detector performance under uniform flood illumination conditions. The formalism can also be used for estimating the contributions of the individual signal generating elements to the total measured signal. This approximation has been tested for MEMS infrared detectors with thermoelectric readout operating under vacuum. The responsivity of the same device calculated using the effective area approximation and measured using a tightly constrained absorbing area are found to match very closely, within 5% over the most wavelengths and within 15% at the shortest thermal infrared wavelengths.

Resonant cavity coupled infrared detectors with high detectivity operating at room temperature

A spectrally selective uncooled long wave infrared detector with peak detectivity between 3×10⁹ cm Hz^1/2/W and 4.4×10⁹ cm Hz^1/2/W is reported. The detector is fabricated using silicon microfabrication techniques and integrates a thermoelectric readout with a resonant optical cavity to achieve wavelength selective absorption.

Resonant absorber structures for multi spectral detection in the infrared

This paper presents the design and fabrication of narrowband resonant cavity absorbers in the long wave infrared. Absorption in multiple spectral bands is demonstrated with a structure whose thermal mass is compatible with thermal detectors.