Anand Singh
Solid State Physics Laboratory
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Publication
Featured researches published by Anand Singh.
IEEE Electron Device Letters | 2015
Anand Singh; A. K. Shukla; R. Pal
This letter reports on the design and fabrication of HgCdTe electron-avalanche photodiode (e-APD) for low dark current and high gain for imaging applications. HgCdTe e-APD photodiodes were fabricated in the n+-ν-p+ configuration for FPA at 30 μm × 30 μm pitch. Process for creating the required carrier profile and compositional grading in the absorption and multiplication regions was developed. Graded bandgap profile in the absorption region has been introduced. Shallow mesa etch isolation and effective passivation of side walls were introduced to control lateral currents. High quantum efficiency of 65% makes these APDs suitable for applications like quantum encryption. These measures helped in achieving high avalanche gain of 5550 at 8 V reverse bias in HgCdTe MWIR e-APD for the first time.
IEEE Transactions on Electron Devices | 2017
Anand Singh; A. K. Shukla; R. Pal
This paper reports the performance of midwave infrared (MWIR) electron-injection avalanche photodiode (e-APD) fabricated using graded bandgap HgCdTe epilayers. Carrier transport in the e-APD is dominated by drift transport due to the built-in electric field associated with gradient in the bandgap. Carriers encounter fewer collision events before entering the multiplication region as the dead space effect is reduced. On-set of generation and multiplication processes is controlledmore effectively. High gain indicates a reduced in-elastic scattering by phonon-emission due to gradient. Quantum efficiency above 80% is achieved in merely 2–3-
AIP Advances | 2015
Anand Singh; A. K. Shukla; R. Pal
\mu \text{m}
Optics and Laser Technology | 2011
Anand Singh; Vanya Srivastav; R. Pal
-thick absorbing layer because of more efficient collection of the photogenerated carriers. Lower generation volume is beneficial in terms of low dark current. The generation is confined in the vicinity of themultiplication region. Generated carriers are readily evacuated from the absorber region under the built-in electric field. An order of magnitude improvement over the state-of-the art performance in MWIR e-APD is achieved by introducing a controlled energy bandgap gradient in the HgCdTe epilayers.
Defence Science Journal | 2008
Poornendu Chaturvedi; Preeti Verma; Anand Singh; P. K. Chaudhary; Harsh; P. K. Basu
Initial results on the MWIR e-APD detector arrays with 30 μm pitch fabricated on LPE grown compositionally graded p-HgCdTe epilayers are presented. High dynamic resistance times active area (R0A) product 2 × 106 Ω-cm2, low dark current density 4 nA/cm2 and high gain 5500 at -8 V were achieved in the n+-υ-p+ HgCdTe e-APD at 80 K. LPE based HgCdTe e-APD development makes this technology amenable for adoption in the foundries established for the conventional HgCdTe photovoltaic detector arrays without any additional investment.
Materials Science in Semiconductor Processing | 2014
Anand Singh; A. K. Shukla; Sumit Jain; Brijesh S. Yadav; R. Pal
Infrared Physics & Technology | 2011
Anand Singh; R. Pal; Vikram Dhar; S.C. Pant
Semiconductor Science and Technology | 2017
Anand Singh; R. Pal
Solid-state Electronics | 2018
Anand Singh; R. Pal
Journal of Electronic Materials | 2018
Anand Singh; R. Pal